irfcom Power MOSFET Basics By Vrej Barkhordarian International Rectifier El Segundo Ca Breakdown V oltage Onresistance Tra ID: 23976
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tl IDDSG(c) Another BJT limitation is that both electrons and holes 1101001000 Body Regionp BREAKDOWN VOLTAGEmThe reach-through phenomenon occurs when the depletion region on the drift side of the body-drift p-njunction reaches the epilayer-substrate interface before avalanching takes place in the epi. Once the5 Epi Layer Substrate Electron Flow Figure 5. Trench MOSFET (a) Current Crowding in V-Groove Trench MOSFET, (b) Truncated V-Groove MOSFET Channel length also affects transconductance. Reducedchannel length is beneficial to both gfs and on-resistance,under the poly and form a conducting channel betweenm0C is important. It is giveT00 SharpIDV RRRARJRDR thJCmax25 = CCCMiller capacitance because it causes the totalcircuit. Also shown are the components ofV 0.00.51.01.52.02.5 IDV RGCLDDCLSSCC (a)(b) Charge time for the Miller capacitance iscapacitance C23)supply voltage at time t43Gcorresponding to t4.m1GCG VDIDDGSCCSID OOVGVt0t1t2t3t4tVID VIRRCGSGGGD "HEXFET Power MOSFET Designer's Manual - Application Notes and Reliability Data," International