27 WALOALO SEE400 o C anneal Jeff Elam Anil Mane Aileen OMahony 100 nm ALO Passivation Passivation MCP R M Ω Preanneal R M Ω Postanneal R Change No passivation ID: 641065
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Slide1
ALO Passivation of MCPs:27% WALO/ALO SEE/400oC anneal
Jeff Elam
Anil Mane
Aileen O’MahonySlide2
100 nm ALO Passivation
Passivation
MCP
R (M
Ω
)
Pre-anneal
R (M
Ω
)
Post-anneal
R Change
%
No
passivation
13600-329
40.1
82.2
205
No
passivation
13600-330
42.6
86.0
202
100 nm ALO
13600-323
55.8
87.5
157
100 nm ALO
13600-324
51.0
78.6
154Slide3
5 nm ALO Passivation
Passivation
MCP
R (M
Ω
)
Pre-anneal
R (M
Ω
)
Post-anneal
R Change
%
5 nm ALO
13600-269
47.4
70.0
148
5 nm ALO
S000659
51.5
77.0
150
5 nm ALO
13600-271
76.9
129.0
168
5 nm ALO
S000667
84.7
138.0
163
No
passivation
S000662
50.0
129.0
258Slide4
Photek Pb MCPs
Passivation
MCP
R (M
Ω
)
Pre-anneal
R (M
Ω
)
Post-anneal
R change
%
100 nm ALO
Photek
794112
23.1
39.1
169
100 nm ALO
Photek
794113
21.5
24.0
112
100 nm ALO
Photek 794115
20.7
22.8
110
100 nm ALO
Photek
794116
26.6
28.5
107
100 nm ALO
Photek 794119
22.8
24.5
107
100 nm ALO
Photek 7941110
22.9
24.5
107