Slides prepared by Sami Vaehaenen Presented by M Campbell WP6 3D packaging part Manpower Sami Vaehaenen CERN Fellow 100 Timo Tick ACEOLE PhD Student 100 Michael Campbell CERN Staff 20 ID: 785799
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Slide1
WP6 interconnect technology part
Slides prepared by Sami Vaehaenen
Presented by M. Campbell
Slide2WP6 – 3D packaging partManpowerSami Vaehaenen CERN Fellow 100%Timo Tick ACEOLE PhD Student 100%Michael Campbell CERN Staff 20%
Slide3Recent Actions / Ongoing WorkLow-cost bumpingSingle chip Ni/Au UBM depositions were tested for Medipix2 chips at
PacTech
.
Looking forward to test
PacTech’s
solder ball placement systems for rapid solder deposition.
There have been negotiations with a Swedish company called “
Smoltek
” about collaborating with development of state-of-the-art
anisotropically
conductive films (ACF) for radiation pixel detectors.
Visit at S.E.T. in St
Jeoire
, the place where the state-of-the-art flip chip bonders are made.
3D test vehicle
3d test vehicle has been designed at CERN and it can be used in the development and evaluation of all the three key technologies: through silicon vias (TSV), low cost bump bonding and large-area BGA solder ball interconnections on different substrates.
Test vehicle mask design finished. Waiting for TSV or low-cost bumping technique characterizations (daisy chain, Kelvin via and/or bump measurements.
Through silicon via (TSV) project with VTT (funded by Medipix2 Collaboration)
TSV process development project with VTT has been started and masks are under purchasing process.
Sami and Timo visited VTT to finalize the process flow for dummy wafers.
Substrate technologies
Timo is searching suitable substrate candidates for 3d integrated structures (TSV’s). LTCC and CCL are the most interesting candidates at the moment.
Slide4Low-cost Bumping Work at PacTech PacTech has done some single chip Ni/Au UBM depositions for a handful of Medipix2 chips.
Prototyping process was quickly set up for the chips. There were some issues with plating quality mainly because single chips are more difficult to plate than whole wafers.
It was shown that electroless Ni/Au can be grown uniformly even in very fine-pitch bump layout.
Encouraging results (pictures) were obtained for the use of electroless technology for MPX2.
Test batch of wafers is under preparation for characterization of yields with electroless Ni/Au UBM’s. Electroless plated UBM’s could be used with solder or ACF’s.
Ni/Pd/Au metallization would be most reliable electroless solution
Ni is strongly
passivated and it will remain solderable even if exposed for elevated temperatures for a long time.Gang ball placement (GBP) technology is advancing and 40 µm sized solder balls have been tried in process prototyping (animation). 40 µm sized solder spheres would be suitable for many of CERN’s present day detectors if they could be transferred with high yields (> 99%). PacTech aims at 100% bumping yield with GBP technology because of the visual inspection routine before bonding the solder spheres.
Flux deposition
Bonding
Reflow
Cleaning
Slide5Smoltek ACF TechnologySmoltek has a very interesting solid carbon nanotube growth process, which can be used in fabrification
of sub-micron resolution ACF’s.
Estimated
fibre
diameters are ≈ 30 nm.
Fibres
are grown in clusters and the pitch of patterned clusters ≥ 100 nm.
Fibres can be metallized with nickel.We are looking forward to collaborate with Smoltek. Smoltek would provides the ACF on wafers and CERN would provide the data about the flip chip yields.ACF fabrication process consist of:Spinning of liquid catalyte.Patterning by lithography.CVD growth of carbon nanotubes at 400 ̊C (≈ 50 nm/min) on patterned areas.Spinning of polymer on fibres
.Removal of the top surface of the polymer to expose the carbon fibre ends.
Nanofibres can be grown on many materials (Ni, Cu, Al, glass, etc…)
Restriction: only 4” wafers or wafer pieces can be deposited in the chamber at the moment.
Slide63D Test Vehicle3D test vehicle has been designed for characterization of bump bonding, through silicon via and BGA assembly processes.Aim is to provide feedback for collaborating companies and to acquire reliability data at CERN.Measurements can be done for daisy chains on three layers, Kelvin bumps at sensor– ROC interface and Kelvin TSV’s on readout chips. Possibility for very demanding through package testing from 4 outputs on carrier.
The layout enables advanced packaging technologies, such as chip-to-wafer and wafer-to-wafer bonding, for future interconnection development.
Benefits
Easily measureable test platform
.
Flip chip bonding yield and low-cost bumping technology evaluation.
Via yield and reliability testing.
BGA interface optimization and evaluation.
Development of assembly procedures.Parallel development of vias, low-cost bumping, re-routing layers and BGA interface.
Create reference
comparison between foundries.
Probing pads can be diced off for 2D tiling of structures.
Slide7Potential Substrate Technologies for 3D
Glass epoxy laminates (FR4):
Traditional circuit board
Cheap and very mature technology
High density wiring (HDI built-up technology)
Low Temperature
Cofired
Ceramics (LTCC):
Multilayer ceramic circuit board
Mature technology
High density wiring
Carbon Composite Laminates (CCL):
FR4 board with carbon composite sheets
Compatible with traditional process -> cheap
Compatible with HDI built-up technology
Silicon
Low Temperature Cofired Ceramics (LTCC)
Glass Epoxy Laminates (FR-4)
Carbon Composite Laminate (CCL)
CTE [
ppm
/K]
2.6
6-7
16
1-10
Thermal Conductivity [W/
mK
]
13
2
0.25
80
Density [g/cm
2
]
2.3
3
1.9
1.55
Relative Permittivity
11.7
5-8
4-5
NA
Young’s modulus [
GPa
]
130
350
15
170
Via size [um]
<1
100
50
50
Through substrate via
size
[um]
10-50
100
100
100
Line width
<1
100
50
50
Line pitch
<1
200
100
100
Substrate thickness
100-300
500-5000
500-5000
500-5000
Slide8TSV Development Project with VTTMedipix2 collaboration has started a TSV development project with VTT. The aim is at developing a Cu TSV process, which could be later used in production of detector assemblies.
In the beginning, process is developed with blank wafers. After establishing a TSV process, we will proceed with the real process wafers.
The complete 3D integration process is complex and many process entities have to be at good level to build an operational device in the end.
Via filling plays the most demanding role in 3D integration process
3D test vehicle for electrical measurements will be created by CERN, which is used for characterization of processes.
Process flow for dummy wafers was finalized at VTT in the end of May.
Slide9Actions to ComeBatch of test vehicle wafers has to be prepared for the low cost bumping work.UBM depositions will be continued at PacTech.Prototyping with gang ball placement technology at
PacTech
.
Test state-of-the-art
anisotropically
conductive adhesives for flip chip.
Smart Equipment Technology (S.E.T.) should provide some simulation results for advanced flip chip bonding systems.
32 pin probe card has to be designed and ordered for the 3D test vehicle.Looking forward to first TSV wafers processed by VTT.Sami and Timo are in Electronics Components Technology Conference in San Diego, U.S.