1AGHIl FMITTING DIODES FOR LAS1lk PUMAPING - PDF document

1 AD )-7 50J7 1.AGHI-l FMITTING DIODES FOR
AD )-7 50J7 1.AGHI-l FMITTING DIODES FOR LAS1'lk PUMAPING FlIa rv v \V W ns ton l-1u~ Al g --raft, Compan% Prepa red for: Defense Supply Agency DISTRIBUTED BY:- Na~onI Jeci*~t-nformtinSr-v-ice U. S. DEPARTMENT OF' CIMMERCE W2S5 Port Royal- Road- Springfield Va. 22151 ''by I NEIIC-rR.-- 80 I- d LIGIHT-BIVMgzTTIN-G 3DIODXES -7by - -ELA-V-E-- V. W--NSTO-T IiI  _ i.'-: :-~ TJ~ $--.,)- ERVICE - I _ _ _ _ _ _; ":HUGHES:, --- --- --- --- TAO A\ / p Best Avai~lable Copy This compilation was prepared by the Electronic Properties Information Center (EPIC), Hughes Aircraft Company, Culver City, California 90236. EPIC's_ oblective is to provide a comprehensive current resource of scientific and technical information on the electronic, optical and magnetic properties of materials. The compilation isdistributed by National Technical information Service (NTIS) U. S. Department of Comumerce Springfield, Virginia 22151 AdditiLonal copies are availab'le at a cost of $16.00. Orders should include the- pu~i~catiozi ic1.b EF~Ir-TR-80. Checks or money orders should be made payable to the National Technical Information Service. NTIS prepaid Coupons may be used or orders may be charged to an NTIS- Deposit Account, ZI I 44 N• - Jhe Aoplto prv# dis rib uedbli-el e ditibto unlmied DOCIMENTCON T*OL PATAL Da'~f otncaaf~ M ýftwfl 48W~eaiel o fim.-&of -0ai u"a ofwd Md AMa Oe4oon MUIaa ho .nf~i.E when, 00 I- 0QiSINA TO#* ACTIVI? TV P~~ a& ."&Pont SECUNITY CLýA*IC~T E~ec~r~nicPropert.es _Information -Center Ucasfe ugeAircraft Company ~ Culvr CtyCalifornia 90230 TLight-EMitting Diodes for Laser Pumping - 4. OZACRfPTIVK bNOTES (~ of t.,wt mod melelotia dettej -interim Repo

2 rt 9. AU THORISI (rit tot. &Ida#f IRM. t
rt 9. AU THORISI (rit tot. &Ida#f IRM. toot n") Harvey V. Winston and M. Neuberger 4' REORT CTS0. TOTAL NO. OF PAGJLS 776, No. or prtP __ _ _ _ _ _ _ _ _ _ __ _ _ _ _ _ _ _ _ _ _ 30 1 107 -C"RCT OtORGANT #4. eas. 001141#AIONS REPORT mumagnasi DSA 900-72-i-IU.82 16. Pr@JSlCT O.EPTC-IR-8O ~.OYHERUE4pflRI' NO131 (Any offse flisot~ Met aww sbaj!1wE Approved foir public release; distribut.ion unlimited. If- SUPýPLf"ENTAVIT MOOTKS St-i SPONSORING MILITARY ACTIVITY _Copies are available from NTIS IU.S. Defense Supply Agency for $6.00 Defense Electronics Supply Center Dayton, Ohio This report reviews the published literature on the application of light- Iting diodes to the pumping of solid-state laser rods. Because-of the reqt4urements of matching the LED output to the absorpt ion bands of the active lase impurity ions, most work in this field has coricentrated on the terary 'alloy LED's such as galliufii aluminum arsenide and-gallium arseni.c -, phsphide systems. Data tables on these materials are appended to the -report. -~~= n =,- -- Unclassifiled LUght-Emitting Diodes- liasers GaluAILuinu-m Arsenide Gallium Aluminum Phosphide :.aser Pumping Mechanical Properties- 1hsc. Prprte Yttriu-nurn~.. Al-~~.Gre ________UnclAssf itd ~~7-1 3MPIC-Lt- 8O *by P SP I P40 S12709 -(ENTER r I- O ~lit he Electronic Properties Information Center is operated by M. Hughes Aircraft Company under *.ontract to the U.S. Defense Al -] ~Supply Agency (DSA 900-72-C-I1382); technical aspects of EPIC ...operations are monitored by t'he Army Materials and Mechanics - SResearch Center. The support of these sponsor organizations 45 =_:_=° ~is gratefully acknowledged. = 25 This

3 document was prepared under the sponsot
document was prepared under the sponsottshep of thefes Department of Defense. Neither the United States Government nor any person acting on behalf of the United States Government assumes any liability resulting from -he use- "N or publicati&i of the information contained in this document or warrants tha such use or publicdtio -will be free from privately owned r'.ghts. - 2:--i  IJGHT-EMITTING DILODES .- LASER PUMPIN SUMMARY This report reviews the published literature on the application of light- - emitting diodes to the pumping of solid-state laser rods. Because of the requirement of matching the LED output to the absorptiona bands of the active laser impurity ions, most woT;k in this field has concentrated on the t_rnary alloy LEDs -such as GaAs,_.P. and Ga,.,Al As, whsih can be tuned by ag their composition. These alloy systems hace been actively developed in connection A wit:h visible display applications, and the laser pumping application has benefited from advances in this technology. Successful operation of YAG:Nd3+ lasers pumped by GaAs P diode arrays has been achieved; YAG:Nd has absorp- tion bands near 8100 which correspond to efficient emission wavelengths in both ternary alloys men-tioned. For this reason, the YAG:Nd3+ appears to be the best choice for -the laser to be pumped as well as for, its 1.06 micron output, which is compatible with good detectors and thus suitable for many communications and ranging systems. The key to efficient operation of a diode-pumped laser is "the optical and the~ral design of the pumping cavity combined with a laser resonator design which optimizes the utilization of pumping light. liodes of .both

4 alloys mustf b operated at junction cu
alloys mustf b operated at junction current densities greater than 1000 A/cm to provide enough output power for laser pumping, and it is not known what operating lifetime can be expected. Future work on LEDs for laser pumping will probably be concentrated on achieving long operating lifetimes I wh-le maintaining the high efficiencies which are already available. Appended to the report are data tables or. the gallium aluminum arsenide and gallium arsenide-phosphide systems complete with individual bibliographies. 7__ --" .- L IGHT-EMITATING DIODES FOR LASER PUMPING Since the early days of solid-state lasers and p-n junction electrolumin- escent diodes, workers in zDoth fields have been striving to combine the two technologies to produce efficient diode-pumped solid-state lasers. Efficin operation was expected to result from matching the narrow absorption bands of the active laser impurity ions n solid-state laser hosts. The first published work suggesting the feasibility of this approach was by Newman. '.thougl, lhe did not actu&3 ly dem-onstrate lasez &ction. he was able to exciteA the .1.06 psin fluorescence of N+ in a CaWOj, host by means of light emitted from selected GaAs p-rn junctions. -He showed that some GaAs junctions, madeA by partic-.ar fabrication techniques, amitted in the 8650-8900 X absorption bzaid of CaWO.+: Nd~T h~ emission from other juncticos fell outside this ban,,' The first actual laser operation with LED (light-ernitting diode) pumping was achieved by Ochs and Pankove. They emlydaCaF2 laerrdwi+ laser emission at 2.36 iira, pumped in its 7200 absorption band by a GaAs ?%2 LET' at 770K. The laser rod operated at pumpe

5 d-hilliuin temperature, and was limited
d-hilliuin temperature, and was limited to 0.2 seconds of operation by internal heating. This work introduced-the 'dea-of'adj-usting the composition (and thus the bandgap) of ternary III-V LEDs. to match the pu~mping band of the solid-vstaie laser. About t-he same time, Keyes and Quist used the emission of a GaAs diode laser atI 8'fQO X to, excite a CaF2:U3 laser line at 2.631 uim. They also suggested the possibility of using a ternar'y, spec~ifically Ga TInl_ .As,, to produce pump radiation around 8750 A -f ar exciting Nd" lasers.. -In these early attempts, the princilples of dicde pumping of lasers were clearly demonstrated. but practical problems, also becarne evident. The solid- ! state 1"sers emitting in the 2-3 uim range wtere not desirablce for many systems applicationis because of-~the lack of fast high-gain detectors. The I,1- emisaion at 1.06 uim is more desiirable from this viewpoint, and the technology of YAG (yttriwm aluminum garnet) as a Nd3 host was developing- rapid-ly. Harada -and-Suzuki described methods for imaking GaAs laser diodes emitting around 9700X and suitable for pulsed pumping of Nd~+ 1'uihilin and Antonov also studied GaAs diodes for pul-sed, lasar pumping, pointing out difficulties caused by irternal heating in the diodes, including frequency shifts-and changes in interntl absorption. In 1968, Ross reported srccessful op'2ration of a YEG: Ndt 2 pulsed laser, pumped at 200 pulses per second by a GaAs diodle laser, The GaAs output was tuned to the ctbso±rption band-of Nd3 at 8675 X by cooling the diode to 1700K. It was found that the YAG rod reached threshold with 6.06 millijoules of diode lager light, while 1.2 m

6 illij~oules of flashlanip light were req
illij~oules of flashlanip light were required. This demonstrates the efficiency advantage of narrow-band Ldiode output as compared to broad-band flashlaTip light, an advantage further accentuated LAy -the decreased heating of the laser rod. In the context of asn laser diuxie emission to produce pulsed YAG:Nd 3+ operation, Ross emhsineg-t mn-uss rmmn laser diodes could be collected by the "'Al- rciadeitda iatpiewt ml beamdiegnea sctl widtbi A joi-nt effort by Texgas Instruments (TI and Bell Telephone Laboratories (BTL) invdgiigators has demonstrated actual continuous room, temperature operation of a GaAs P..P diode-pumped YAG:Hd3 laser. Their work confirms the feasibilityv of the concept but also spotlights the difficulties. We will review their results with particular emphasis on the LE.D charazcteristics they found necessary for- laser pumping. I -~ FW&IRZ I. LED PUMPED YA1G:Nd LASER. (Allen and Scalise)'. LIGHT £UITtIM!G DO~DZ LED OOVE' REFLUPECIO s~ticom -CERAMIC- 44 -t I- 3. In the first of a series of papers dmiscribing this work, Allen and Scalise of TI -repovrted a system in which the GaAs,..xPx LE~s were operated near 77"K. -Figure 1-provides a schematic diagram of their diode-pumped H ~ YAlG:iNd laser. 'They_ employed GaAs0.87?013, which has an- emission peak of 8025 at 'the oper~ating temperAture,, and a lineiddth between- half-intensity points of 190-1i this corres'pod -to the most intende absorption-lines of YAG:NId, occurring near 8100 AO. They noted that a 1% increase in phosphodrus content produces a 50 1shift toward shorter wavelength and a o10K decrease in temperature shifts the peak 2-3 Xtoward shorter wavelengths. Their sys

7 tem contained,15 diodes mount.ed on a li
tem contained,15 diodes mount.ed on a liquid-nitrogen-cooled copper heat sink; each diode was fabricated into a hemispherical dome 0.Ole-in. in diameter to reduce total internal reflection, and each diode package included a gold- -plated elliptical reflect or. The-diodes could emit 50 mW at a po~rer efficlendy of 101V. (Junction didmeter was-not specified in-this paper-, in. th ltr eate p'apers- it- was given, as 0 .005 in.) -The laser diiput deed odt~YA o the U~ser- cavity parameters, the Opt ica d dppling-between the LEDs and-the rod i- and the temperatuire !of thio -rod. Without attempting to optimize-these, Allen and Scalise obtained 40 mW- output at 1.O6M--u-m with 8W of electrical powierý into the LEMs, for an A overall efficiency -of- 0. 5%. There is no ditrect roviso forcoing the laser rod in their aiirangement; its temptrature drops slowly toward 77P( after the heat sink for the LEDs-has-been cooled. At first, tlhe rod- emits at ý._0541 upm anid then anothe tnition at 1.0634 Pm starts building. After - 30miniute&, -only the,1.0614 pim transition survives, with no further changes!. -Itis -khown- thdt. the- .16i* -rwavelength is characteristic -far operation nearq 30K ndthe- shortezi wavelengthi -or operation near' 7711. -The 0.-5% efficiency figure -is for a laser rod -1.5 x 360 ~MM Wit 4p ted confocal end mirrors of 99.9 and d99i,8% reflectivity.ý The lowest -throeshold observed -was, 300 mfl eletrial npi~.to 'thi4diode- array uigA 1 -x 30 mm rod-with the same miror 'efectvites perating, at 1.0614 urn. Th- nextstep towardzroom temperature operation was described by Ostermayer -of--BTL. -He us~d_-GaAs ..P---diodes suipýlled by TI and

8 apparently of the 3ame desig as those of
apparently of the 3ame desig as those of-Allen-and Scalise. A major diffarence from the earlier TI -- study was the improved deiign opf the pumping cavity, in which-a linear aryo LEDs ,as positioned, at oaie f ocus of a sem iellipt-ic cyli1ndrical reflectopr, with the YAG:Nd3 rod' at the other f ocus. This provided neal.rIy theore~tfcally -maxcimuz. -Z- -__ ~PS _____A optical coupling between the pump diodes and-the laser rod; also-the- laser rod had A reflecting channel or reflecting coating coveri.ng half~its surface 3 which allowedda double pass of pumpllng radiatioh. Fina11 th6- geometry allowed separate- cooling and temperature moh'tooing for the diode -array: and -belaser rod. Ostermayer-performed one experiment with_ LEDs operating -at 7,70K to de'termine th incz~ease of the t'rshl poe or :Nd with increasing laser rod temperature, achieving satisifactory agre~emenit with a theoretical expression. The power efficiency of the 770-X diodes was 10-15%. Then, using the same laser rod and pump ing cavity, Ostermayer installed-a set of nineteen LEDs of-the correct comkposi.tion to eiwit 8100 at rcoo'n temperatuie-. These were mounted on a large copper heat sink~ and the whole as66mb~y could be located precisely along the focal line of the semielliptic reflector-with -the help of an XYZmicropositioner and a rotating-tilting t~able. Tigure 2- illustr~ates the apparatus used to pdrform the diode pumping expdrkinent~ FIGURE 2. APPARtUS FOk CONDUCTING DIOD- PUMPING-EXPERIMENTSo. (Ostermayer ELLIPTICAT 2 il(ýTO UOL-2NO MS VAT A similar-arrangement positioned the laser rod Which was-,-attached. to- a-heat - sink cooled by thermoelectric doolers. Wit

9 h -the LE15s operating at 2S0_.mA/diod*,
h -the LE15s operating at 2S0_.mA/diod*,- - (the makimunm toitrAýdý diive currents, above Whicfidiode_ pefrac as, --soeL "w "t-erded, semyrdtrie h maximum laser-rod temprtw a ic -whi d: I. ser~e Vi _d~drb~ te r-l~rp a thi~edhold could be reachfid. With a 0. 4% transmitting mirror on the laser ~ th~m~xiwn t er~aure for threshold was -2.*50C; with both laser reflec- tora having high refetvy, threshol.d was at 3.*50C. The room temperature E$were 4% efficient. With'a maxImum drive current limitation on the output of each IED, a ~further increase in pumqping power required more dioder, in the linear array. Nineteen was the. maximL ~ubrallowed in the 5 cm length of the pumping cavity by the dimensions of the ind~vidual LED packages in this work, but si~.alley packages would allow 60 or 80 diodes in the same space. Ostermaye. pi~dicted that with this arrangement it should be pcssible to obtain 50 mW I3 cont~nuously at r'oom te-irperature from an, LED-pumped YAG:Nd3 laser. The most recent report byOstermayer, et at. demonstm~tad room-temperature A ew (continuous wave )-operattion, but only at 1.4 mW output. The paper-includes a careful analysist of the effects which limit the- laser output and suggestions forf Posbibi6 -ipprovements. In. this work, the advance which allowed room ':,temperaturas operation was the increase' in number of diodes na the 5 cm-long pupn dayity from .L9 to 64. The individual diode- elements were hemispher- 4-0 icalk dom~s of, GaAso0 95PO1, -which emits near 8040 ~.The domes were 0.46S mm in VZ- -di~inetei, with jiuxic~tions O(Y13 Pin in diameter, on 0.71-mm equare electrically 4nAa 9h silicor submouni-s The individual elemen

10 ts wez e mounted in i inear arraiy on a
ts wez e mounted in i inear arraiy on a common heat sink maintained at 200C by flowing water through- At. 'the pek "isiot wavelength and che spectra' bandwidth oŽf the array, which determinie the degree of spectral i tchi&ng with the A N~ pump bands, V41PY with diide current-because of heating effects. By comparing cv. las ý,r ouiput powers with output powers after current pulses of a few milljiseconds, and by correlating changes in laser output with changes in diode emission, the authors concluded thaxt three effects combine to give a net decrease in rumping affficienqy with heat'ng of the diode array. A shift in peak wavelength from -7206 V~tt low currents to 8020 at 225- mA/d~ode improves the efficiency, but -is approximately conpensated by a decrease in total power output with heating. The. third affect is an increase in spectral bandwi%..t. -cthe array, caused by 4Ifer'ential arfts in the peak wavelength of different diodes according to -- the effectiveness of their hbeat sinking. The bandwidth increase causes someI' of th LEJ outut t fadoutsde the absorption band of 'the YGN3.~v;a -- of -he 4r. oupu to---~= fa- out YAG:Rd --- time constants were observed in the deca- of the laser output from its short pulse value to the cw value; a 30-msec decay was associated with heating of the diode elements with respect to the heat sink and a 20-sec decay related to heating of the heat sink. A further 160-sec decay was connected with a -M .rise in temperature of the laser rod heat sink, though in normal operation the thermoelectric coolers on this heat bink were set to hold the temperature [! "constant. One of the laser rods had flat pi~aallel ends

11 w'* one high reflectivity coating and on
w'* one high reflectivity coating and one antireflection coating, so that it could be used with an external output mirror. Varying the rauius of curvature of the output mirror caused a change in the TEM0o mode diameter; Zhe larger the mode diameter the higher the threshold. This was attributed to the focusirng of the GaAsP junction radiation in the YAG rod. The lowest threshold was found with another rod with a resonator configuration giving the smallest i.,de diameter. The authors proposed to achieve an- efficiency increase in future work by using a wider diode array and a larger diameter laser red with a larger TEMoo mode. They point out that the input power goes up linearly with array width while the output power goes up as the square. At a drive current of 225 mA/diode, corresponding to input power-of 30W, the optical output of the diode array was 0.90W, for an average power efficiency of about 3%. The 1.4 mW continuous laser output at 200C corresýonds to a total power efficiency of 0.005%. However, in millisecond pulse operation, the power efficiencies were higher; 4.9 mW for a 30W electrical input, and 15.7 mW for 44W input, approaching 0.04%. The authors expect that cw operation at close to the pulsed efficiency could be realized by more uniform heat sinking of the diodes in the array. Finally they point out that vith the laser rod at 0O%, the pulsed output for an input of 44W was 55mW, giving an efficiency of 0.13%4 Since it requires only 2W of power to the thermoelectric coolers to maintain the laser rod at O°C, under cw conditions an overall efficiency of 0.12% could be anticipated for these conditions, once the heat- sinking of the

12 diodes is made uniform. These are, unti
diodes is made uniform. These are, until now, the highest efficiencies reported or realistically * predicted for diode-pumped laser operation near room temperature. The 770K results of Allen and Scallse corresponded to 0.5%, and this might increase several times if the more efficient pumping cavity of the later experiments 7Z were employed. It must be noted tha, the drive currenLs for the LEDs correspond to junction current densities of about 1700 A/cm2.This is much larger than the usual values, on the order of tens o! A/cm2, for LEDs used in the visible region. The TI-BTL work just reviewed has' demonstrated se of the practical difficulties for diode-pumped lasers, as well as providing a background for the requirements on LED pumps for this ar-kcation. Briefly, the LEDs must emit light within the pumping band of t6e WCi2d state -aser aT a high e ency. This limits the choice of material of the LED to those which can have their bandgap and hence emission wavelength "tuned" by varying the composition. For pumping YAG:Nd3+ with its pump band at 8100 t. the present choices are the ternary alloys GaAsl.xP×, the .ateria :sd by the TI-BTL workers, or 0-a A xA~As. These materials have received a great deal of attention for other LED applica- 'tions and the technologies for preparing the&i and fabricating them Into device structures are well-developed. The other materials which can be tailored to 0 emit at 8100 A, In1 .GaxP and inI -AlxP, are much less advanced, but they are receiving attention for visible Lk1I) applications and should be considered as future candidates for laser pumping. Two recent reviews by Bergh and Dean and Nuese, et al. of the

13 entire LED field have included discussio
entire LED field have included discussions of the ternary systems, covering the theory of their operation and preparation methods, and giving extensive bibliographies. In the remainder of this report, we will draw on these review papers to summarize the design principles and preparation methods applicable to laser pumping diodes. We will also discuss recent work "" IJ Gal xAIxAs high-efficiency LEDs suitable for laser- puamping, and comment on the limited literature on degradation and reliabili*y, . The tunability of bandgap in-the ternary semiconductor alloys of interest for laser pumping, is a consequence of the change in electronic energy band structure with comDosition in these materials. In each case, the bands change from the direct gap structure characteristic of GaAs, for example, and at a particular crobsover composition- the lowest conduction-valence band separation becomes indirect. In a direct materieal, the lowest conduction band state is at the same point of the Brillouin zone as the highest state of the valence band, __ which leads to a high probability for radiative recombination of excess holes and electrons. In indirect materials, these states are at different locations in the Brillouin zone, and radiative recombination is generally much slower, _ --- ---- _ _ -- ---4--,_' I occurring only with the intervention of pho'ons or uith the aid of impurity levels. Thus direct gap materials are much more efficient light emitters than the indirect ones, since competing nonradiative recombinations are less important, and this circumstance plays a central role in many LED applications, because the band gaps in the visible rang- are ge

14 nerally on the indiret side of the cross
nerally on the indiret side of the crossover composition. Fortunately for the YAG:Nd3÷ laser pumping application, the rqquired band gaps are in the direct range of compouItion - The mechanism of light emission in an LED is the radiative recombindT:on of excess current carriers injected across a forward-biased p-n junction. Direct-gap semiconductors have a high internal quantum efficiency compared to indirect-gap materials for the reason just discussed. However, because of their higher radiative transition probabi"ities fcr light at or near the band- gap, direct-gap materials may absorb,wit) in the LED i-self, the light emitted at the junction. This is a problem for, the laser-pumping diodes as well as for visible range LEDs, and has occasioned the developtent of special configurations -to minimize the inernal losses. The general principle of these schemes 41-s to provide a path for the emergence of the light generated at the Junctions through material of higher bandgap and hence lower absorption. The emergence of the generated light is also hindered by dielectric reflection effects at the interface between the diode and the external med!.um; ordinary reflection loss is minimized by anti-reflection coatings, while total internal reflection losses are avoided by using dome-like structureus, so that the light is traveling nearly normal to the int.. iace when it reeches the surface of the diode. Electrical losses in the diode struc.lure are kept low by maintaining a low diode series resistance ty means of high doping levels and favorable geometrical design. The details of the fabrication of the GaAsl-xr. LE-s used in the TI-BTL laser pumping work

15 were not given in the publlcations. How
were not given in the publlcations. However, GaAS4..jx diodes are usually fabricated by vapor-phase epitaxy. Fuicable g.-'eous mixtures of - arsenic and phosphorus (formed by the thermal decomposition ci' arslne and ar: hsenic ned phshou (fre ytetemldcopsto Zas n phosphine-) wih a gallium-chlorine compound (formed by passing Hi_ gas over molten gallium) react to form the ternary alloy as a deposit on a GýUks substrate. Dopants can be introduced in gaseous form at variou- times during the a,-Position or subsequently by diffusion. The process is very flexible, allowing prec'se control of the composition of the deposited layers through the flow rates of 9 rN the Sucous reactants.* The basic process has been used commnercially for several years, and is well adapTed tc volume production. It is usually necessary to grade the composition of the epitaxial deposit from pure GaAs to the desired-composition, of GaAs, (yvrigA/raodung the. grow-th) in order to avoid the effects of lattice mismatch. Liquid-p~lase epitaxy is the preflerred growth method for Ga1,.The material is grown frona e. melt cif: gatllium, gallium arsenidto * and aluminum ont~o ments in the technique are availabile; swie are discussed by Blur, and Shih. The method has been particularly well. developrid in connection with the fabrization of heterostructure GaAs -AlXGa,_As9 laser diodes; a recent paper by Miller et al. describes a meth.1od to obtalln hi.gh uniformity and re'ýroducibility. Reflecting the less- advanczd state of Ga1_xAlxAs LED technology compared to that of Gas ti.'irn Live been no rep-orts of laser pumping with Ga1 xAlxAs LE~s. However, several recent papers contain di

16 scussit~ns of highly efficient laborator
scussit~ns of highly efficient laboratory diodes or of configurations which might be adapted for laser- pumping. Dierschke, Stone and Hfais~v have produced Ga~~xsZn-diffused LEDs emitting at 8150 X. The power efficiency at maximum output at- 250C was 12%. light emitted at the junction emerges through material of higher bandgap, than the junction itself. In their process, the ternary is grown on a GaAs subtrae; ecaseof the high distribution coefficient of aluminum in favor of the solid ternary,* the melt is depleted of aluminum and the bandgap, of the epitaxially deposited material decreases away from. the substrate. The deposited layers -are 0.03 to 0.06 cm. thick and doped n-type by tellurium from the melt. The next step is the formation of a 0.011 cm p-n junction, by zinc diffusion on the side-away from the substrate. Then the GaAs substrate is removed and the unit- are formed into hemispherical domes. An anti-reflection coating of Sio is applied to the hemispherical surface an4 electr-.cal contacts to the n and p regions on the plane surface of the hemisphere are made by means of metallization patterns on a silicon subm~ount. The reported spectral bandwidths of the emitted light range from 250 to 670 X, which indicates that in some cases light will fail to match the YAG:Nd 3+ pump band. The authors ascribe the wide bandwidths to location of the iunction in regions with to high a composition gradient; since some units already have low bandwidth It a eepc htipoe 10 -4_ _ _ _ _ _ _ _ _7~T control of the fabrication process will generally yield acceptable bandwidths. Woodall et al have produced LED structures starting with a GaP substrate. The

17 high bandgap of the substrate allows it
high bandgap of the substrate allows it to be included in the finished device without at~orbing the junction light, and the layer of Ga Al As need not be. so thick that it can -separation from the substrate, In this work a four-mzIt system was employed for the _iquid epitax-y; the substrate could be moved from melt tc melt with or without losing the solid-liquid inter- face, and counterdoping of each melt during growth was possible. Phosphorus S. contamination arising from meltback of the GaF substrate iu the first melt was greatly reduced by moving the substrate and the initial dposit to the next melt. Other melts allowed changes in the composition in addition to those caused by depletion of aluminum in the melt. in one structure, the composition was graded approximately _Learly from the substrate to the junction. Each melt contained tellurium for n-typre doping; the junction was formed by counter- -doping the third melt with zinc during growth. A test device was formed into a mesa structure to allow contacts to both n and p regions on the same side. This diode emitted at 8500 A with an external quaantum efficiency of 1.2%. A similar struct-ure ._ th a roughly hemisp, ::ri.;a1 dome formed in the GaP substrate had a quantum efficiency of 5.5%. An even more promising result was obtained with a structure in which the light was emitted in a region grown from a melt much less rich in aluminunm than the other melts. This "minimum bandgap" structure is realy a heterojLnction device, since the junction is between a p-region of one composition and an n-regd'., of another composition. A mesa diode of this type emitted at 8000 ? with 2% efficiency; p

18 resumably a dome configuration in the Ga
resumably a dome configuration in the GaP substrate would increase this by something like the (5.5/1.2) :Wai-c for the linearly graded device. Despite the observation of many metallurgical imperfections in these structures, they apparently do not affect the electro- luminescent behavior of the active layers. Burrus and Miller have described LEDs based on SCd Al A2 designed to couple efficiently to optical fibers. They deposited successively on an n-type GaAs substrate n-type Ga1 lAl As, an emitting layer of p-type Gal.yAlyAs (v less than x to make this the lowest ba.-dgap region), p-type Ga AlxAs, and p-ty;e GaAs for contacting purposes. A 50 lim diameter contact dot was defined on the last GaAs layer, and the GaAs substrate was etched away above the dot so that it would not absorb the light emitted by the active layer. In this application, a clad optical fiber- was attached Ly epoxy resin to the window etched in the substrate. The light output near 8000 1 from a 30-,m length of fiber with an input current of 150 mA was as large as 1.7 mW. It may be interesting in the future to consider arrays of such units in which the 2 emitted light is brought to a laser rod via optical fibers, el-minating the usual pumping cavity and to some extent allowing the LEDs to l e geometrically and thermally decoupled from each other. Like all semiconductor devices, LEDs are likely to sff,- a change in characteristics, usually for the worse, during operation. hong operating life without excessive degradation of light out-at and effi:Iency is essential for the laser-pumping application of LEDs. The published 3anpircal information on the degradation of units suita

19 ble f'n, laser pumping is neither extens
ble f'n, laser pumping is neither extensive nor conclusive at this time. Gii xAlAs emitters were lifetested by Dierschke, et al. at 25°C under a current density of 1500 A/cm2; af,;er 5000 h};rs the Ibest ones had degraded less than 15%. The Ga1 ,Al As scurces of Burrus and " *, X Miller were reported to have operating lives to half-output at 7500 A/cm2 of at least several thousand hours. Double heterostructawe laser diodes having a related structure have not yet achieved long operating lifetimes; Miller et al. renort very subs,:antial degradation after 25 hours of room temperature cw operation. LEDs for visible display applications exhibit operating-lives of many op lsicestme thousands of hours. Hartman et al. have given the most optimistic estimate of half-life fo.- LEDs of 108-109 hours at room temperature. This is for GaP units specially passivated to prevent the introduction of impurities. Of course, 2 visible LEDs are operated in the range of tens of A/cm , while the laser pumping diodes (at least those proposed so far) all require bias current densities above 1000 A/cm'. Thus the operating ccnditions are much less favorable for long life -Ai for the laser pumps. There is some hope that degradation may be at least partially reversible. Burrus and Dawson, workir.- with high current density GaAs light emitters found that applications of a periodi- reverse bias with a duty cycle as low as 1%, slowed the degrtadation dramatically, and further, a previously degraded diode could be restored by heating at 1000-2000C, under zero or reverse bias for several hours to a few days. Possibly laser pumpiog is compatible with degradation-delaying bias s

20 chedules of this kind. i There is genera
chedules of this kind. i There is general agreement that the degradaticn of LEDs arises from bulk effects near the p-n junction. Schade, Nuese, and Gannon have proviied direct 12 evidence that non-radiative defect centers do appear near the junction in GaAs P diodes which have undergone degradation. Their measurement of 1-,x x thermally stimulated currents showed a greater number of centers in the more seriously degraded devices. Their results could not identify the defects, however, beyond assigning energy levels to them. The degradations were frc.r. 5 to 50% after 2000 hours of operation at 10 A/cm2.Centers could have been formed by the Longini mechanism (the transport of charged interstitial impur- F .ities across a p-n 4junction into a region where they complex or precipitate) or by the Gold-Weisberg mechanism in which mome of the energy liberated in nonradiative reconbination generates vacancy-Interstitial pairs. If the non- radiative recombination takes place at an i.purity atom, the interstitial can be the impurity itself. Bergh, working -with GaP LEDs, showed that intentional introduction of copper accelerates degradation and careful elimination of contamination by copper and similar impurities greatly increased diode life. He concluded - that the mechanisms of degradation, whatever they might be, were not inherent in the operation of the device. It remains an open question whether degradation can" be sufficiently reduced in the ternary LEDs to make the laser pumping application really practical, II -Si-? M LA 13 -=--_-L -_ -__ " -_---- _- .----_ -,, ... ._ ...- -- -.. r- __- BIBLIOGRAPHY ALLEN, R.B. and S.J. SCALISE. Continuous Oper

21 ation of a YAG:Nd Laser by Injection Lum
ation of a YAG:Nd Laser by Injection Luminescent Pumping. APPLIED PHYS. LETTERS, v. 14, no. 6, Mar, 15, 1969. p. 188-190. BERGH, A.A. Bulk Degradation of Ga? Red LED's. IEEE TRANS. ON ELECTRON DEVICES, v. ED-18, no. 3, May 1971. p. 166-170. BERGH, A.A. and P.J. DEAN. Light-Emitting Diodes. IEEE PROC., v. 60, no. 2, Feb. 1972. p. 156-223. "BLUM, J.M. and K.K. SHIH. Growth of Smooth Uniform Epitaxial Layers 2y, L-u.id- ilbhase-Ziritaxial Method. J. OF APPLIED PHYS., V. 43, no. 4, Apr. 1972. p. 1394- - i396. BURRUS, C.A. and B.I. MIILER. Small-Area, Double-Heterostructure Aluminum- Gallium Arsenide Electroluminescent Diode Sources for Optical-Fiber Transmission Lines. OPTICS COMM., v. 4t no. 4, Dec. 1971. p. 3U7-309. -AURRUS, C.A. and R.W. DAWSON. Smill-Area High-Current-Density GaAs Electro- luminescent Diodas and a Method of Operation for Improved Degradation Character- istics. APPLIED PHYS. LETTERS, v. 17, no. 3, Aug. 1, 1970. p. 97-99. DIERSCHKE, E.G. et al. Efficient Electroluminescence fron Zinc-Diffused Gallium Aluminum Arsenide Diodes at 250C. APPLIED PHYS. LETTERS, v. 19, no. 4, Aug. 15, 1971. p. 98--00.-- 3+ HARADA, R.H. and C.K. SUZUKI. An Injuction Laser Pump for Nd Doped Hosts. APPLIED OPTICS, v. 4, no. 2, Feb. 1965. p. 225-227. JHARTMAN, R.L. et al. Degradation and Passivation of GaP Light-Emitting Diodes. APPLIED PHYS. LETTERS, v. 18, no. 7, Apr. 1, 1971. p. 304-306. KEYES, R.J. and T.M. QUIST. Injection Luminescent Pumping of CaF2:U3+ with GaAs Diode Lasers. APPLIED PHYS. LETTERS, v. 4, no. 3t Feb. 1, 1964. p. 50-52. KRUZHILIN, Yu.I. and N.V. ANTONOV. Characteristics of Spherical Recombination Diodes as Optical Pumping Elements.

22 OPTICS AND SPECTRO., v. 23, no. 2, Aug.
OPTICS AND SPECTRO., v. 23, no. 2, Aug. 1967. p. 160-162. MILLER, B.I. st al. Reproducible Liquid-Phase-Epitaxial Growth of Double Hetero- structure GaAs-Al1Gal..As Laser Diodes. J. OF APPLIED PHYS., v. 43, no. 6, June 1972. pt 2817-2826. NEWMAN, R. Excitation of the Nd3 Fluorescence in CaWO4 by Recombination Radiation in GaAs. J. OF APPLIED PHYS., v. 34, no. 2, Feb. 1963. p. 437. NUESE, C.J. et al. The Future for LED's. IEEE SPECTRUM, v. 9, no. 5, May 1972. p. 28-38. OCHS, S.A. and J.I. PANKOVE. In'ection-Luminesctnce Pumping of a CaF2:Dy2+ Laser. IEEE PROC., v. 52, no. 6, June 1964. p. 713-714. 14 OSTERMAYER, F.W., JR. GaAs±..xPx Diode Pumped YAG:Nd Lasers. APPLIED PHYS. LETTERS, v. 18, no. 3, Peb. 1, 1971. p. 93-96. OSTERMAYER, F.W., JR. et al. Room-Temperature -w Oparation of a GaAs, Px Diode- Pumped YAG:Nd Laser. APPLIED PHYS. LETTERS, v. 19, no. 8, Oct. 15, 19i. p. 289- 292, ROSS, M. YAG Laser Operation by Semiconductor Laser Pumping. IEEE PROC., v. 56, no. 2, Feb. 1968. p. 196-197. SCHADE, H. et al. Direct Evidence for Cenaration of Defect Centers During Forward-Bias Degradaetion of GaAs.,~ Elect'oluminescent DiJces. J. OF APPLIED PHYS., v. 42, no. 12, Nov. 1971. p. 5U72-5075. SHIH, K.K. and J.M. BLUM. A'xGqlxAs Grown-Diffused Liectrolwuinescent Planar Monolithic Diodes. J. OF APPLIED PHYS., v, 43, no. 7, July 1972. p. 3094-3097. WOODALL, J.M. et al. Gal1xAlxAs LED Structures Grown on GaP S-ubstrates. APPLIED PHYS. LETTERS, v. 20, no. 10, May 15, 1972. p. 375-377. 15 ,_- -ZA APPENDIXA Gallium-Aluminum-Arcenic and Gallium-Arsenic-Phosphorus Systems Data Tables .4. NEUBERGER U- These Dat3 Tables provide the m~ost reliable inforration av

23 ailable for the physical, crystallograph
ailable for the physical, crystallographic, mechanical, thermal. electronic, magnetic and optiral properties of Ga Al ~As and GaP, As *AI.3. data points are x -xlx -M referenced. Where two or more documents present the same data values, all are cited. The bibliography which 72ollows each of the data tables is arranged alphabetically by author; more than one document by the same author is distinguished by the letters A, B, C, etc. Other Ill-V -ter'nary systems for which data are avail~able are included in "Handbook of Electronic Materials," Volume 7, III-V Semiconducting Compounds, Data Tables which is to be published by Plenum Press during 1972. 5 16 27M GALLIUH-ALUHINUM-ARSEHIC SYSTEM PPROPE TY S.hBOL VALUE UNIT NOTES TE.P.(GK) IT.'ERENCES Fornul a Ga A! lAs Densi~ty x ___ C 3.598 AIAS 300 Dona.ay 1 4.29 clc-e tube, 4odine Black & Ku 42 U41 va;;cr frane- Sir.t g ..igh purity7, (11D) GaAs A: 5,0 G.~ Baterau:, et al, Color 10 orange Ptenrnitte White iTcbt Hanascvtz2 20 red-crage ,hroug. ap1xal, CVD Bindeurn et al. v0 ed thin f-In% on aijmina 70 teddish 1;14" :- ,h:ýk so 10 a ck $yrretr~y cubi-c O 6505 AlAs Lttenberg Paff 42 5.581 KcI & Ku .00 5.&5191 GaAs Coopav' Them1l Expanslcn Coe0f. 0 5,20 IO:',6e AlAs, linear f cos 230C Ettestarg &£ 3-!OOO°c, .attice iFaff .atch AIAs-GaAc at 800-1000*C Co'-:ete 100 0.86 GaAs Pietron et al. At. % of Linuidus Liquidus isotherms a A As T c" 90.5 i.0 2.5 898 first soiid for slow Panish & -94.0 1.0 5.0 9S2 cioling of hig1h gallium. Sunaki. 89.0 1.0 10.0 1037 -oi1iohs legeiss S 94.0 1.0 15.0 1082 Peerson (B; 92.5 5.o 2'. 1002 E, .0 5.0 1067 95.0 5.0 10.0 1140 82.5 i5.0 2.5 1074 Diele-cric Constant Optica

24 l j S90-9.6 11.0 'tcal m'sess, 300 Sik
l j S90-9.6 11.0 'tcal m'sess, 300 Sikharulidze n-type, polycryitalline et al. 8 8.5 reflectivity meies. ýn 300 Ilegc~hs £ single crystals Pearson (A) rEffective Farsc Electron M... , n',e:.+ 9 ; 0.071 1,32 raflectvitvy meas. on 300 STkharlidze •9 %.G74 4.60 n-type, polycrystalline al. 9SS 01070 1.63 material, 30P th ck- 91.A 0.064 1.80 _- 17 --~w Txjfrty T =-4:tfP- -...U.- =-= ---: --- --= --  /--  '+ :-.= GALLIUM-ALUMINUL-APSENIC SYSTMh PROPER?) S/YMDO!, VALUE UN:T NOTES TEMP.I(K) XErERENCis Energy Gap t x Ed.ris-r.) s Aires Elcto irect Egd 0 2.90 2.13 eV ALrAstK z thml .:nirsect Loren: atal. '1. 25 2.42 2 cnottkv Larriur 300 Casny !, 34 2.30 lAS Lhot-rssr¢nss rns. P~nIch 48 2,.2 1,86 -~55 2.0 18 6is 1.8) - 100 1.4257 Ai0 Zvora Energy Danr, r r~~ rg £I i' SStructur,.- r53 1,94 3.15 3.33 L V molecular be.m:. vapor 300 Cho S S57 1.7 3,06 3_07 preparat'on, single Stokowrk ! . 75 1.81 cry stal i-, 80 -2.97 3.!6 roflectIvly aroes. t83 1.67 2.96 3.!4 -2.93 3.14 go 2.92 3.13 x E + E++E Ei+a, S' Ec' loo' E a 0 2.93 5 AlAs 300 Derolo £ 25 2.49 2.54 3.5 3.7 4.7 4.75 4.85 electroreflec- Woolley 34 2.36 2,9 3.4 3.6 4.7 4.75 4.85 tanCe meas. on 48 2.16 2.19 3.25 3.5 4.7 4.7 4.9 LEE deposited, 55 2.04 2.06 3.2 3.4 .4.9 1 mil thick layers 69 1.90 1.83 ---4.9 on Gaks 85 1.63 1.66 2.91 3 1) 4.4 4.6 5.0 100 1.42 1.45 2.9 3.0 4.4 4.6 5.0 GaAs Direct-Indirect x Cross-over 64 1.92 eV electroluminescence 300 Dlerschke et al. 65 1.92 electrol!,inescence 300 Berolo £ meas. Woolley Phonon Branch Spe'.tra x -I) w T TO1 702 Longitudinal Optic LO 0 49.60 44.89 -reV reflcctivlty oeas. 300 Ilegems C Transverse Optic TO 19 "9.60 31.98 45.25 31.74 on singl

25 e crystals Pearson (A) "" 47 47.87 33.48
e crystals Pearson (A) "" 47 47.87 33.48 44.89 31.99 --'--5-5 47.61 34.46 44.63 32.24 59 47.10 35.46 43.65 32.11 62 46.75 35.71 44.15 32.4Q 66 46.36 35.96 44.15 32.92 79 44.89 36.02 43.65 32.37 92 4.63 36.08 44.15 33.11 100 36.21 -32.74 Refractivo index n x n. 1e 2.9 refltctlvlvty meas. 300 Ileges £ on single crystAls Pearson (A) 90 3.3 .ptical Meas. on 300 Sikharulidse single crystals. et ail. is Ema --''g m~--- k GALLTUM-ALUM!N'M4-ARSEIF.C SYSTEM PROPERTY .SMBOL VALUE UNIT NOTES TEM.HP (OK) REFERENCES rElect.-on Emission xA Wavaleigth tmIcrtpn Eff iciency Photo- (Cold cathode) Ctu'nnt Denshyv a e n aIttvixty es 800J-8900 0.1 4.0 700-1000 LPE- 300 Schade 4at a! . detosited on (A, B) 'lped GaAs, Cr. 0-covered 2 Use in. a H~. Wavelen~gth TC n Eff!- ~ 'wt Jucii a~r(A) A/cnr (4 Omutu % 8700 5x101 L&-C '700 oW dcuble huterostruc- 300 Nlukes -_t al., tueitntinlaser, mill1er et al.. I 2Th s4Wecpe (A. 8) 1)n-, I-oeG~~.11 ,). p-, doped GILA$s, xo *)- Ze-duped ,GaAIAs, 5x101 q0p-, Oe-dcoed, GaAs, 5xiOl8 leer C.t-l hc dourle heteroscvtruc 311 Nayshlet al 1110 nwe [APE n5ction laser,- 2600 0.04 W ontfrnuous waeoperationt emits rolarized light Elletroundnscet xWaveiength Current Toe clls(A) rensley (V uutpuT Qunu iO~ 300 mA 24Zn-diffused diudes, 300 Dhoraohxe enfclny 9: .YE depDosited on. 3Ms "t al, 1O-1SL iunctt'on depth .-LPE ops. e on W.As 300 Btr-0en log t xk4. n.. p-ye layers, 77 -2-Sii thick g M,- Al+ ion irpl~nntation 7? j insperger & of Zn-doped VaAs, Y3s 7 0.4L -hick 6%_j7i00-2 anneale-d 5 hr. at 77 9000C TO Efficienc:- Luvirnance Adcn2 % ____ 62-67 Eb$Q 40 0.23 ,Q4 ft L [ARE de*ýpoalted p-n 300 S1db £ flwn junction, %7athick Powar 70 775C-73

26 L40 7500 .*7 mW do,_.te hateio'_t'uc- 30
L40 7500 .*7 mW do,_.te hateio'_t'uc- 300 Survms £ diode smiopled t,ý MultIrmode opt~c-: ibrs 2000 hour aperatlflg life - '10 76-0 (stron~g) mi-doneA single 4.2 8'ndemann cr-stals. photo- et a.1 1~ias''emean. Light Yoouot ion lhos-e Bias Modulation Voltare. 7f" ILS3E 1600 1C" ' ý.,. nrWl z 1i-r. lenks diode 300 311chr- 1$ .o = -- -- -- ;~-- ~ -- ~ ---5 CALLUM-IXMNUMARSNICBIBLIOGUA.PHY DATEMAU. 7.9. et al. Elastic KWulit of Single Crvstal Call'. -Arsenide. J. Or APPLIL7, Pflfl., v. 30, 13LWOLO : and Zx w'rO.TrY. £Flectroreflectance S-pecr-c of Alwn.inm Call!=m Arsenide Allo* s. CAt.A~r.-TAl. ER~tKTUG, P. et a!. Thm oved Technique for thea Preraratifcn o~f Ga Al As Elect; ;lumlnezc-en Nodeý VELETRONCS tr-rr- v. B. no. 11, Jan. 13, 97'. r. BiflDt!ANP,ýR. et al. Fljotcluminescence of .51 -Lt pt A'. 3a iE1;.r-p Crvrtai1. Lh"S. 7 t StL:: A, I vi 7, no.d2 a01t '6 14~7- p 2-K123. StAC J.F.and .P -Preparation and Properties_ of Altrinuz= Arnen)-de-Galiur, Arsen'dde Xi.xed- Crystals. r E~mtC.SOCuiE" SOC. 11l3, no. 5t Mar. 1966. p. 2a41-2 .94tt,4, C.A anz L' * Srnall-Ar'sa, nobePtrorutr lninun-Galliur Arsenide flactrobmi- t 'n-soeit Diode So'rceA- ror Op- ia-Fiber Trantrs-s-on Li1nes. __t1L:- CCI1'f.'ICATIOflS, v. '1, -!. U, Dec. 1971. CASEY, 114 and-H2 " NV' -CpotovDndn or th Z-1-21- AILIr~ur Arsermik Direct an! Indirect 0-.~4R �A.Y'r4~S BCS tlua ear. Epgta-r; and rm-t*r5l Zialuattcn of Al~uminum Gallium Arsenide, C'QOPZ AP24 rer-se Lattice Con'tants of, Gzrron'vý.z, Altrnnu± Galliwa Arzenide, -Urnijur !-S41ur. quart; % Si~ c4ndapta -AC-_ CRYSTALteGW4W$ l- 92. 57$ t9S - --ýDZRhMrX_ Eficint lettrominsce-cafrwr Vinc-Arfused.G 08 Aln Dio~des atr254

27 C. - '5' -LUo. v. 9Ic.1,til'.3729 ILEGid
C. - '5' -LUo. v. 9Ic.1,til'.3729 ILEGids A. sn mst. -DatLAS~i Ifa.e Peef-l"cTio iptetraB od W.1 A1tn ixdca Crv~tallzs. h PHs. PEV., P, PhaseýG F=a. ;and .J. PAL. -1? he LYMP OI knansin of s. otc, L&9 pp HY10 v() 0,Sp. 90 wmm, API R *t-ac. The r:±d~t ln Absorp --tutu rtion Lasmo .1f A.sz 0rend Fn At-PLIED ittoSo .v. 42 r.r III.ataio n. £1V. PLNI v.I17ER. 3 .-ctt, AM.dIIee 2': '.7 ci Du2tHo s-atu-e3'sn' ý. MILERtj, M. atu I.. PUitO.y Iniforam AXeGa.1-Asl Sp:ctr usur G l.Ass Miend Crptaheir4. Cnrcersis -en.vairs no. 2 14. HYS .1970.E, v. 1576-158. * / .:91 .3Q='3 PANISH, P_ aT. SYMP' OaAlA N t';aA-, Linn'. Op~a o. 1969), DS. 3-10 CNB- P, AN zO .AtLDS D.' 338 19F4.-.187-93 K5XrbpQ\H at ien ofit (Axr _anA__aof Aetranda. ¶Alw Laser S;e- -Vresr~ azz;¶r iec aa..- "in-'.'. n' ic 'Oc.~ t~'~= -3 "b=.ode' --T- ArN 43, p.$15 r0 PTINKAS, E. et al. SaAs-Al~I.. As Ocut10 eter-ostructure Lasers-Effect of Doping on Lasing Character- istics of GaAs. j. Or APPL!1 HYS., v. '43. no. 6, June 197". p. 2827-2835. REINHART, F.K. and PA. Kf'LEUR. Efficient GaAr.=A1xela,_1s :vuble-Heterostructuro Light Xodulavors. APPLIED 'PHYS. LETTERS, Y. 20, no. 2, Jan. 1972. p. 36-38. SK tH. et a.. N ovel SaAs-(AIGa)As Cold-Catve~e Structure and Factors Affecting Extended Operation. AnPLIED PAYS. LETTERS, v, 20, no. 10, Pay iS, 19S- D. 385-87 CA) SCHADE, hi. et al.. Efficient Electron -nisslor. frrom s-AaxAs 'ttoeldcttvnlc Cold-Cathode Structures. APPLIED PAYS. LETTERS, v. 18. no. l0l, May 15. 47 .'.f3=414. [B] APPLIED PAYS., v 3 o ,jl -7,r 0"3n SIMRLIDE,0.A. at Ci. Op:4cal Phenaansg in Ga2.'ium Ar -enide-Allwninut Arsenide Solid Solutions. SOVIET PAYS. Sfln:IJODLCTORS, v. 5, no. P

28 , Febo. 19;72. p, 15,02 13-26. MU.R, M.
, Febo. 19;72. p, 15,02 13-26. MU.R, M. Faraday Rstation and Faraday Etlt'Atcitv * the Exciton Absorption Pegion of Gallium Arsenide. PHYS. STATUS SOLID!, v, 28, no. 2, Do;.",S69. P. 7S5.=792 m v 4& r~~ALLIVP-ARSEN'IC-PH43SPHOPIUS SYSTEM PRO"IrrtY SYMBOL VALUE H1 OT ES TEMP. (OK) REFERECES rormula GapAs. Uniyx G4 Vlft (grfcr3)- 0 5.32 OaAs 2293 *Jones at Al. 13 5.20 **Abagyan at al. 38 8.9 560 4.6-. lOC 4.S4 r4K~ ~~~~~~~7 4.5:~ o14".3 opr-Aayna 1 vapGr singl trinspo--rt -ao "-rnp 0 5.65332 5.6S32 5.Bf191 5.6527 G~ 10 5.6305 13 5.818 20 S.6103 30 5.5990 38 5.579 40 5.5676 41 S.56tu7 so 5.53 5 .SS65 55 5.S5624 56 5.560 60 5.538 S.'52se A$ 5.510 70 S. t'-- 72 5.Mfl 78 5,. 99 92 5.473-5.1.02 100 S.4505 5.14505 5.14406S 5.4505Ga Malting Point 1Px MP 0 :16Ga~s Rictman is 2C, nurakamti so S5o -o- Osaufl et a!'. 100 1167Gap PicOh.an Ther-rall Eo-ans*-on Cooff. 0 6.9 DU77Gs Plerron at.tal.. 141 5.141 frcm lattice censtarnt msas. 50 6.al -7-581Go --- -- GALLIUH-AR..SEYIC.?H0SP-'IORus SYSMTV _PPOPtTY sYVIMo VALUE UWIT NOTES TEMP. (oK) PrrERrtNCr± k x k (w/cm 0k) 300!r 273 f'k .Polycrysallne, Ta- Var.so. wV 2o -0.,, -. So- ad 51-doped 33-35 0,u t.1 ii 2-4x10i -0 0 .2 ; 0 .' T Optical ?KCp V 1.4944 IC,7479 GaAs Clark I Holonyak O zlt 251 Ingle crystalus grown by 17.t 1S.2311 10.46% closed tehe, Iodine vapor o10.-016 10.29Ct transport method; optical 35 .971 10.1637 -mess. In infrared 41.? 9,0382 10.0331 b2.5 MOW60 2.620?, 10-9 s9 .90 Gap 6 10.76 optlcal reflectivity mes. Varleur & 20e10.20 n piX01 !cuC Barker 56 9.53 £5 0.86 Mobility u n x ((cn2/V sec) Electron 'I -. - 30 3150 Gas- transport, vapor 300 Ogirlma phase, epitattal, single Curate crystals, n

29 1' l.5xl0- u '70YK 3000Y 0-30 15400 5000
1' l.5xl0- u '70YK 3000Y 0-30 15400 5000 epitaxial vapor deposition Tietn - 40 1300 on (100) GaAs not doped, Wilsberg 0 500 nnr 5xlO 5.-0 -z i.5x107 n-z 6x1017 0 GaAs 5000 "000 epitaxial, n-type, single 300 Ku S -4000 crystal, closed tbib, 50 5000 4000 vaPor deposition on (110) 15 4000 3000 GitAs or GaP, IodinL. trans- 5 2500 -Mort, Se, To or Sn-do-ed 30 1500 4000 so 250 u n (G%3 r.n 12 1500 1.0 epltaxlal, n-type, single 300 -ol7a et at. 20 S00 -crystal, vapor deposition, 25 700 1.0 Se and To doped -4 400 - 25 1.0 n Dopant n 1018k- $3) 70 160 95 Te 1.8 single crytral. s Yrova et al. 75 1U. so :e 2.1 80 so 60 Te*Zn -1.3 o80 100 70 Te so 150 g0 e 4 '30 300 10 ..4 23A t~..H-s2'~z-pxspxoi~sSYSTE1I PROERT 5)281.VA LVE UTNOTES ffjp1(OK) urMrtnnc Electron to x .4300 HI 1, Craford at al. Compostion C.ff, r 0.072 (1.X) 20 :42 2.7-u.1 z-zical reflctiv~ty 300 aglItwn at al. -t.25 C7aad Faraday rutaftiefl 4 30 4. t.s at 2-4'4t oan - ta .4~155 0.47 2.5 M4tria Energy Banrd E~S ~ t .t' E Direct Gap, ., Z.43 0.33 2.9C 0.22 4.46 4.913 eV 3KAS 300 Thosps, at a ,t t- 1.55 0.32 2.94 -.24 4.48 t.43 electr-oeflec. -Ir~avian Spln-.tit g 20 1.67 t.23 3.01 0.22 4,52 ;.. :!v rac., et ii. -0 ,0 1.82 0.27 3.06 S-23 i.52 5.04 sealed tube, W0 1.90 0.25 3,14 0.23 4.58 si-na transport, 5C 2.04 -,aa7 4t 06,21- 4.61 5.13 pelycnrtaline, 00 2.16 0.19 3.27 0.19 4.63 5n1 1017; GaAs and 7 2.2f 0.16 3.38 4.67 5.21 OeP e&e single a: 2.44 0. 16 3.41 crystals 99 2.60 0.12 3.58 4.75 5.3. 100 2.75 0.09 3.66 4.75 5.28 GaP 1.645 '.330 3.003 0.232 4.61 electronfitz- 300 Rohn Vance meas. S2 2.021 3.053 180 Rehr. 28 Cf35 op:Lflmaas. omn 300 todby, 43 0.2U2 single crystal, Belle Ot al.

30 '.7 .20ep~taxial MiT& 70 C. 19G 87 ITnd
'.7 .20ep~taxial MiT& 70 C. 19G 87 ITndirect 3ap xtY 4au Cptzer L Moad 25 1.85o r'cCal oas. m. -vapar 300 Ku 30 .cvzosited, singlu cistcl, 50 2.0 55 '...9; hotolol- And btMirs- Spitze r 75 2.2, csn:e mpeas. ccr.u lyctmstals Head GE.0 cc 2.12 1b o•2.19 (aros cvr) ýpen ubt va-or droi~tedP7 Hrzog et al. S(:3-) GAs, S. 00ncion ;helectrolurjnescnc-.. r~ 35Z -= = _ __ :2!a OALL.tUhI.AtCCTflI-PHQSPFCWJS SYShEl4 onY61D~ AV UNIT I(=TE ?.EM.(OK) REFERENCES --ra 6G- - L- 4 1 "T 1. 3,42 4.1.1 t,45 4.4.2 $.1 C.5 qflj41* us, Woly* lM 4*z- Q reflec~t Wlt rites W lat &I 14* 11 4.6 4. 1-7 -2 o epltaxial lyr oe Lo 4 3 lo tica fts, ors SUabe R U t401 V , 6 on ''~a~a n4s canukya ~~Pgqptcaa roas. or.4 S eq' yOr74 tasbiev S&C 3. fiTA~S~j p 14jors Chalikyan r~~~~nc~~S. JAr4~j;~I~ -yrfe~an -= A NAA7 ke 4 t$10 Ibcn~elecrina zw:-~gqw sq- t j~ikf AV~tf77 Sbas4vv as OwljyajI puyrititia Q.Ot 1(.9"4 77 ihtPe 0orV4uctteltv, 2in&! flla 17.7c* -t -eas0 32.3 10.4ou &ao rf ~ 4. 43.6 10, rot pitsa '8 44.4 33.4 10.2 o 11 67.5 ..$.., 33.9 MS ~ ;.aAs 135 u.5.7 39.8 3'..5 8.6C 44..4 %7.2 33.8 V". 100 '6.6 '4..ý8 3'..7 e.4.8 44.'ý 38.3 u2.8 :i.. 7K. GALLIUM-AREEIC-PHOSPBORUS SYSTEM [PROPERTY SYMBOL VALUE 1Z IT NOTES 7W. (x) flMlEMt Magnetic x" [Susceptibility X w0 32 10 cgs GaAs 300 Andrianov "30 30 single crystal, nr. 1017 at al. 45 28 Faraday rota-ton peas. 71 28 at 77-3000K 7& 27 1100 27 GaP Rarractive :ndex x 870Y nooly Wavelength Wavelength 2.07% 1.03u C.78. 0.62L 2.C74 1.03o 0.78L 0.62L 0 3.27 3.4.3 3.33 3.47 closed tube, Clark 6 "0 3.26 3. 3.30 3.45 halogen vapor Rolonyak 12.5 3.22 3.35 3.26 3,41 nart, 25 3.21 3.31 -3.45 3.24 A.36 3.52 polycrystalp, 35 3.18 3.28 3.40 3.22

31 333 3.7 Se- or Ta-doped 41.7 3.16 3.25
333 3.7 Se- or Ta-doped 41.7 3.16 3.25 3.37 3.19 3.29 3.43 n. lol0 62.5 3.10 3.20 3.30 3.47 3.34 3.23 3.35 3.52 1-0 3.07 3.15 3.28 -3.11 3.20 3.33 Photaeectetson Quanttm Yield Y X Ye Wavelhet h 25 38 =A/W 00 cesium activated Soo Sisoc t at. p-tpe photocathode 0-17 C.21* 6000 cesium coated, Zn-doped, Garb* - 30 0.10 6040 closed tub*, Iodine 0.25 5000 vepor transport crystals 70 0.01 1000 0.2C 410 -- 100 0.19 4103 0 0 5000 Erightr.ess 8- (A) (t) (A/"_ 40 720 6520 0. 4.4 Zn-dilffused, vapor 300 Hertag at al. 29A0. 4.4 gr-ovn~t.epivarlal Eilks, Cwurrent :arair, C- To. l01 1017 38 95=4 C:.? .8 x 30a 0gt.ri~a & Kurata 4 0 1000 6450 10 vay grown. 300 Reat at. 4V max. 6533 1.:E 10 n.&)07, Eeler.lun 300 Heath £ doped epltaxlal layers, Stewart cathodolulnescence iwen. 1.2-l.5u junc- tion depth 76 200 56-0 C.-2 1. Zn-diffused, vapor 296 Epstain & grow *eitaxtal diode, Huebner 5.5x31.0.3-0.4 )9 ' area M5 400-00v 6540 '.E 23 2Zn-N doped 300 Gr-vs et al. (at 10 A/om4) 0.2 Zn-doped, vapor phase, epltaxiall EL diodes 3L.-37 E-L diodes 75 faru;ka n x1017 300 Panz ove 29 o300 660n0 0.3a1 por grown EL dfodes 3043 lumese et al, 4'2 A$00 66Z):0 f(A, B) mve GALL XM -A7RSEZ4C-PHOSPHORUS SYSTEM 1R0PEMT SYHIOL VAMtW UNIT NOTES TEMP. (*C) REFZrRMES Laser Properties x A. ' ahresho~ld Current Try --iL Ac2 Dena~tv 20.0 7250 9X10*2 vapor deposited, 78 Taletler et &I. 1.0.5 6750 qX1'05 4pitaxial MRS1 300 14. 8100 26 9iNC2 25W pows- O~utvut 300 10 7G0ý -',3X:1 Te-ioped, vapcr gr-own 77 Elidaev et MI.. 15 59tinigia ct-Istai Apitaxia]. 20 13 4i1lt's 10-164 Junztion depth platuiets flo~nyalr Ftrry Effct 3 &I'isse~. at60 77 A lsmF IIft'19 eN _ i GALLIUN-ARSENIC-PHOSPFIDE

32 BIBLIOGtRAPHY ABAGYAN, S.A. at a&. X-Ra
BIBLIOGtRAPHY ABAGYAN, S.A. at a&. X-Ray nad Optical Investigaticns of Gallium Arstnic Phosphide Crystals. SOVIET PHYS. SOLID SIATE, v. 7, no. 1, July 1965. p. 153-5.I7 WALLEN, J.V. et a!. Microavie Oscillations in Gallium Arsenic Phosphorus Alloys. APPLIED- PHlTS. LETTERS, v. 7, no.4 , Aul. 15, 1965. p. 78-8C. ANDRIANO4t D.C. at al. Magmtlc Susceptiblty of Solid Solutions In the Gallium Arsonide-Galliui Phosphide S~ystem. SOVIET PEWS. SENJCONWUCTORS, V. 4., no. 8, Feb. 1971. p. 1268-1270. AITYPAS, G.A. The Ga-G&P-G&As Ternary Fhase Diagram. EL"cTROCHE. SIX., J., v. 117, no. S. May 1970. p. 700.- k CHEM. SOC.. ,.,..,119,1r7JS, Sept.1971. p.01473-Th78  703. BAN, V.S. Mass Sp-€ctrometric Studies of Vapor PrAse Cr-stei -rowth. -"Vd-4 P Evstem tOixtl). ELL-IRC- "a"CH4, SOC.. j., ý.. 11,l-'.S , Sept. 19741. pý 1473-1478. x " WAt V.S. at al. Influence of Deposition Temperature. cx pos!1icn xan Growth Rate of G4AuxPI..x .ay-we. J. OF APPLIED PHYS., V. 42, no. S, Hay 1972. p. 2471-2471.4 BELLS f.L. at al. Opticl Reflection of a1Ui"=w Msphide. Geiu.1 Arienaide, and Their Solid Soluti;ns. SOVIET PHYS. SOLID STATE, i. S. no. 9, Har, 1ý67. p. 2098-2101. -ESGSTRESSER, T.r.. ar a!. tailect vity a Band Struczr- of Gallium Arsaenide, C.lium Ph.ophide, a.- Gflln w., -Arsenic, Phosphorus Alloys. PHYS. REV. U-1 L ERS, v. 15, ro. 15, Oct. 18, 19b5. p. 662-f64. BUERIEISTER. R.A., JR. eot aI. Ltase Area Epits3xil Growth of Galium arsenic Phosphide for Display Applications. AIAE MTALL. SOC., TRANS., v. 2'5, no. 3, Par. 1969. p. 587-592. jCARLSON, 1.0. at al. Thermal Conductivity of Gallium Arsenide and Galliu% Arse*nic Phosphides Laser Semiconductors. SJ, O

33 r A.LLD PHYS.. v. 36, no. 2, Feb. IE96.
r A.LLD PHYS.. v. 36, no. 2, Feb. IE96. p. 505-507. CHEN, Y.S. at a1. tlea tc'Vibration Spectra of Gallium r-senic Phosphide Single Crystals. PHYS. REV., v. 151,3 no,. 2, Nov. 1., 1966. p- 6-8-656. CLARM, D. JR. and N. HOLONYA. JR. Optical Properties of titan Arsonide-Phosphide. PHYS. REV., v. 156. n0. 3, "Apr. 15, !967. p. 913-924. COOPER, A.S. Precise Lattice Constants of Germnlum, AIuminum, Gallium Arsenide, UranumS, Sulfur, Quartz and Sapphire. ACTA CRYST., v. IS, 1962. p. 578-582. CRAFORD, M.G. at al. Effect of TUllurium and Sulfur Donor Levels on the Properties of Gallitn Arsenic Phosphide lhear the Direct-Indirest Transition. PEWS. REV., v. 169, no. 3, Apr. 15, 191-8. p. 867-992. DEA-fl, P.J. at al. Low-Level interband Absor tion in Ph-ptrzs-P icb 'alliu- Arsenide-Phozpwtde. PHYS. PRV., v. 1.81, no.7 3, Pay 15, 1965. p. 1144-1n533. ELISEV, P.G. at al. Gallim Phosphorus Arsenic-Based :nf*.trior. Lasers. SOVI.rT PUYS. SE!CONDIUTORS, v. 2, no. 4, Ott. 1968. p. b07-508. 01155_ff, P.G. and I. ISA-ILOV, Meacry Effect 2n injecticr Ld=ers SOVIET PHTS. TECH. PHYS., v. 13, no. 12, June 1969.p. 171-172. --= LPSTEI1, A.5. aud R.C. hUELNER. Yellow L- '.c -rot Salilum Arsenic Pl-A-sphide Mades. SOLID STATE fLCrTRONICS, v. 12. no. 6. June 1969. p. 494-496. EENNCER, G.S. Pressure Effezt on Resistivity of Sallium Arsenic Phosphides. PHYS. V., v. 1311, no. 48, May 18, 1964.. p. A1113-A1119. GARB, S. Photoemisslcnm trot Cllum Arsanic Phosrhide -cvered with Low k-rk runction Layers. PMlTS. LTATUt SOLID!1, v. 3, no. 2, ýun* 152 p. r* ' 'OROVES., k..at a!. The Effect of Nltri~ger. 2-_-ping on C- ;iis rsenic Phcshide Ellesrtlumirtescent D1iodes. APPLIE

34 D PPlTS. LETTERS, v. .1, no. 6, Seft. '5
D PPlTS. LETTERS, v. .1, no. 6, Seft. '5, 1071. p. 1134-16C. E-l PEGG, A.t. at al. Lle-olumi~nescence of ittuned Caillu$ Arsenic PutosAide Diodes with Low Donor Cnoentrations. j. OF APPLUED Ph-D., v. 40, no. 4, Mar. 15, 1569. p. 163C-1038. HILL, D.E. Effe-%:live Hass of te (000) C--- to- Bn o Z .APC- S C., WJLL., ,. 11 Set'. 2, ---Mar. 16. p. '05. 8.DEY, Y.W. ;nfra-red A.bsorption in a haUIum Thsph'e-Galiu_ Arnenide Aifcys. it. Aiscrpticn in p-Ty Material. -FYTS. S;C., PROC., Pt. 2, v. 82, no, 526. 'g. ;153. p. 3-2-32e. Ps I ZGLI¶TSYN, M.I. at al.. Some Feaitures of the Str.a~ture of the Conduction Bend of Gallium~ Arsenic Phoephidle Soid4 Solu.'ons in the Itherm~ediate Range of Conpositiont. SOVIC ?HYS. SEMICONDU'CTORS, v. 3, no. 12, Jun*. f'.Z 150-1513.9 o.3 1(. p ~3-53 IRZIKEVICIOS, A. at al.. The Znvestigatil of the E1ectrtrefl@eccanc* Spectrt of Giallium Arsenic Phosphide JOHNSON, M.R. and H. HOLONYAK. JR. Optically Pumped Th-In-Platelet Semiconductor tasers. J. 0OF APPLIED PHYS., ~~I iw, S.M. The Preparation and Properties of */apor-Groswn Gallium Arsenidea-Galliur. Phosphide Alloys. ELEC~TR0 jjCHEM. SOC., J., v. 110, no. 9, Sept. 193. p. 991--§95. LI1(hTER. A.I. and E.G. FZL. lflvestigdtiofl of 3"- P at. PsreCSM _'j, to 0' k4az's SCVILT PHYS. s~vY"ol~ 0 .A. an .W RANMA D cTOROCSv5, no .197, Ma. 119-2 .1323.110 A Ll R.A. t al-. Eleotrolulminescence nG~xjx .-P;ntouwt .1 .o APPLIED .SOCRAS., v. 4'2, no. 3, Mary 19 58. p. 2O0-406 WUiodee.P.a. J-1. PANEH.SJV..Efficiency ofusdallcan' 'Arsen~cfe fhorp--d Clpor-roluinecn Dalu ricds.SOLID SAE ELCTONCS v 0,no 9 S v. 19167, po. 97925,Fe.l6 p21- MWS~~h and COST S.KURAT. CEffectA FES DEFT.o C

35 o incetactiing on od feora Ewpertiis o l
o incetactiing on od feora Ewpertiis o llyG-;IumAsnid Pho'nArseide- JAANS OF PPL. Single Cryta A1lloy. 3, nter, m 1 En.g. :31,Sp-337. $7j 3,9E.CnrcN. AF 33r61A3P1. NHY.,v. 19,67. 7, Juy16.V.97 i NEAXKOV, D.A. a rnd eou' W.Wnd.~ GRNEM Elcrical. Charcteritcs ofd lAsn TrScholdk Bnarrier Diodes. SOI STAT A1 ELETRONICS, vLCh~. 14. 1971 o.V 13912.A. 9.p.1-22 NUERP4], C.IJ. t al. Eoeffcirmnsent l of Vxapor Tof n Gallium ArsenidGl~mPopide and Gallium Arsenicehrh Phosphi AoMpnd Kr Sl 0 TAN. 3.22 .AP3,E PHY., 19. p8 n. 4 20-4o6. 16.p 6916 R1CHMA*1, C.J atal.opitimizPresiun of Gale-lniumarseanide, cecvsfr a Gallium Pop.eadIiu 'Arsheanic tsheNtue Dodes I-V-Elts. 3E. Cl' JHY.,ALCEH FSLS v. 116 , no. 2. Sep 96. t.24 1923. p.1311. OGRJSEUT#Eand K. The TA Efefectio of WHorogCnou ncientration on Seveid Prolutionls of Gallium Arosenide-Gallpido. JAP'ANi. J. Or A EN. SOC. ., v. 11 2 o , no, 4,72Apr. 31-337. p .C4 SCljAD, H.andiY, PhenoAMen Ph"* DiaranmDof Galium Arsenic Phoshide. PhoELV.d qHYs.-br SCystem.1 n. JAPAN 198 Speorum APPL. E PPiYS., LThS v. 8., no. 2, July : 1969.. p. 96..A 0SAMZRA, K.. nt Cal. HExp.erimentsand Cacuatin o thnie Gallifum-alm Arsenide-Gallium Phcsphide SyTems.aryS Phse. Diag33,an. EUC, FeO., J6., v. 19, no7.1,Jn172p.0308 SUASHVEY, J.r". TmeatuGA HLIYI.Ire Dpnlnleof Emizan Lticency and _Spsn- Threspolttin n Gall iumPoporus. ArEEnE. O SOIT HS.S4CO3CTRv. 3E- , no. iQ. Apr. 196a. p. .191-121. 94 THOMPSON, A.D. at al. Coeffcietrorf Extansion of. Galliumr Arsenide, Galliumr Phosp~hide anlys Galliu. ArseVic Ko. 34 no. 2, Jun Slctoefetac in66 p. ~ z F 60AMRCN1-6SO.1.L. .11 e. ,Mr.16...2 RTZZTJEN* V..at. ViscapionPressure oft Galr CArseli Calse

36 icr Phosphide P nd ndimpraum Phopje aind
icr Phosphide P nd ndimpraum Phopje aind Lther. Nature ArsAvie ZL 7RCE. SOC., j-nS , v.2J n. 111, noe. 416. Apr 1965-.p.2C36 SCAE .Ta n hr=n nI~-oe alu rsncPopie L.PY.AT* 4.n.67 98 rK VERLEUR, H.W- and A.S. BARKER, JR. Infrared Lattice Vibrations in Gallium Arsenic Phosphorua Alloys. PHY.S. MLY., v. 149. no. 2. Sept. 16, 1966. p. 715-723. WILLIAMS, E.W. and C.E. JOUFS. .oefltctivity Measi-rents on Ep.taxial Gallium Arsenide-Gailium Phosphide Alloys, SOL!;, STATE COMlM., v. 3, no. 8, Aug. 1965. p. 195-198. WOLFE. C.14. at a!. Growth and Dilslocation Structure of Sinjle-Cryatal Gallium Arseni4e-Gallium Phosphide Syatems. J. OF APPLIED PHYS., v. 36, nD. 12. Dec. 1965. p. 3170-3801, WOOLLEY, d.C. at al. Reflectivity cf Gallium Ar.enia Phosphide Alloys. PHYS, REV. LETTERS, v. 15, no. 16, Oct. 18. 1965. p. 670-672. YLKLOVA, E.S. at al. Ezectron NIobility In Gallium Arsenic Fhosphide Soli4 Solutions. SOVIET PHYS. SrFICON- DLKTORS, v. 4, no. 8, Feb. 1971. p. 1346-1348. jORNS, V.,., V. PRM, and D.S. YYSER. To Le ;nblasled. AN • -a, I 'I --..... or PUBLICATIONS AVAILABILITY LIST 'N DATA SHEETS, STATE-OF-THE-ART REPORTS, AND DATA TABLES EPIC REPORT NT IS* N4UMBER PUBLICATION TITLE DATE ORDER NO. PRICE D5-122 Steatite 1963 AD 413 834 $6.00 DS-123 Beryllium Oxide 1963 AD 413 831 6.00 05-127 Silicone Rubber 1963 AD 413 906 6.00 0S-128 Cordlerite 1963 AD 413 850 6.00 OS-12ý Forsterlte 1963 ADl 421 829 6.00 DS-130 Pyroceram 1963 AD 421 883 6.00 05-132 Zinc Salenide 1963 AD 41.1 964 6.00 DS-133 Zinc Oxide 1963 AD 425 212 6.00 a ; DS-134 Cadmium Selenide 1963 AD 425 216 6.00 05-136 Aluminum Oxide 19b4 AD 434 173 6.00 DS-138 6 orosllicate Glasses 19614 AD 602

37 773 6.00 05-140 Sulfur Heafluorlde 1964
773 6.00 05-140 Sulfur Heafluorlde 1964 AD 607 949 6.00 OS-11.1 Nlobium 1961 AD 608 398 6.00 D0-142 Fluorocarbon Gases 1960 AD 608 897 6.00 DS-143 Germanium 1965 AZ 10 828 6.00 05-160 Niobium Tin (Pt. I1) 1968 AD 838 460 6.00 05-161 Chemical Composition £ Electrical Resistivity of Al Alloys 1969 AD 697 15 3.00 05-162 Silicon 1969 AD 698 3412 3.00 S-163 agnesIum Oxide 1969 AD 698 33 3.00 OS-164 Lead Telluride -Tin Telluride 1970 AD 701 075 3.00 D5-165 Superconducting Thin Films 1970 AD 704 554 3.00 "D5-166 Refractive index of Optical Materials In the Infrared Region 1970 AD 704 555 3.00 S-3 Tetrafluoroeshylane Plastics 1964 AD 607 798 6.00 S-5 Aliphatlc Hydrocarbons 1965 AD 465 159 6.00 5-7 Glossary of Electronic Properties 1965 AD 616 783 6.00 S=9 Epltaxial Silicon & Gallium Arsenide Thin Films ark 1968 AD 675 578 6.00 Insulating Ceramic Substrates i-10 Glossary of Optical Properties 1969 AD 695 479 3.0 S-l II-Vi Semiconducting Compounds i969 AD 698 341 3.00 S-12 IV-Vl Sewiconducting Compounds 1969 AD 699 260 3.00 S-13 Bibliography of IlI-V Semiconducting Film 1969 AD 701 074 3.00 5-14 Linear Electrooptir Modulator Materials 1970 AD 704 556 3 00 5-15 1I-VI Ternary Compounds -Data Tables 1971 AD 739 359 8.00 S-16 IV-VI Ternary Semiconducting Compounds -Data Tables 1972 AD 740 208 8.00 S~~B IBLIOGRAPH I ES*** 4A Reference List on Semiconducting and Non-Stoichlmatric TI Oxides. Jan. 71 3.00 Semiconducting and Non-Stoichicawitric Beritbm Titanate -A Reference Feb. 71 *3.00 3; Guide. Photoconductivity and Photoconductive Materials -A Reference Guide. Mar. 71 3.00 -Epitaxla! Silicon and Galilum Arsenide Thin Films on Insulating Jun. 71 6 3.00 Ce

38 ramic Substrates -A Bibliographic Upate.
ramic Substrates -A Bibliographic Upate. SO-1 Lithium Ferrite -A Speclal Bibliography. Oct. 71 At) 734 597 3.00 5I)-2 Gallium Arsenide -A Bibliographic Supplement. Nov. 71 AD 734 598 5.00 -SB3 Linear Elactrooptic Modulator Materials -A Bibliographic Supplement. Dec. 71 AD 739 360 5.00 SB-4 Ga .;.Alx A- Bibliography. Jan. 72 .3.00 SB-S Cadmium Tel luride -A BibliographIC Suppletment. reb. 72 AD 74.0 209 5.00 *Request from U.S. Department of Commerce. National Technical Information Service (NTIS). Springfield. Virginia 22151. T Check; NTIS deposit accounts or NTIS coupons are required for payment. TA --M EPIC AEPOkT NT S* NUMBER PUBLICATION TITLE DATE ORDER NO. PRICE INTERIM REPORTS JIR-I Bibliography on Ittgh Tmerature Dielectric Materlals. Rev. 5. Mar. 70 AD 735 620 $3.00 IR-13 Bibliography of Encapsulation, E1rbodment and Potting Compounds. may 66 * 5.00 IR-IS Ultra High Frequency References. Mar. 71 AD 735 621 3,00 IR-27 Electrials Resistivity Data and BIbliography on Titanium and Mar. 10 5.00 Titanium Alloys. Rev. IR-41 Radlo-Frequency Shielding Materials Survey and Dao* Compilation. Oct. 70 AD 735 622 3.00 Rev. IR-42 Samiconductive and Conductive Plastic and Rubber Materials. Nov. 66 * 5.00 SIR-47 Compendium of Information on Thermistor Materials and Devices. R. Mar. 69 AD 735 623 3,00 IR-49 A Literature Search Report on Electrically-Conductive Protective Apr. 67 AD 735 624 3.00 Coatings for CHI Shielding Use. IR-56 Weathering of Piassics and Rubber Materials. Jun. 67 AD 735 625 3.00 IR-57 Cable and Wire Insulation for Extreme Environments. Jun. 67 AD 735 626 3.00 A IR-59 Electrical Properties of Thin Films of Alumina. Nov. 67 AD 735 627

39 3.00 IR-60 Thick Film Conductor Function
3.00 IR-60 Thick Film Conductor Functional In" arnd Pastes for MIcroelec- Feb. 68 AD 689 753 6.00 tronict Applications. IR-61 Thick Film Resistor Functional Inks and Pastes for Mtcroelec- Feb. 68 AD 689 754 6.00 tronics Applications. IR-63 Thin Film Dielectric for microelectronics. Jul. 68 AD 689 -6.00 IR-64 Failure Mechanisms/Modes In Microelectronics. Mar. 69 AD 66, 6,00 IR-65 Rellability of Hybrid Microelectronic Circuits -A Report Mar. 65 AD 685 .*8 6.00 Bibliography. I R-66 Hybrid'Thick and Thin Film Microcircuits. Mar. 69 -5.00 IR-67 Dieletric' Constints of Rubbers. Plastics and Ceramics. -A May 69' AD 735 628 3.00 Design guide. iR-68 Antiferroetectricity and Antiforroelectric Materials. Jan- 70 AD 735 629 3.00 IR-69 Cuprous SuWfide and-Cuprous Sulfide-Cadmium Sulfide Hetero- SOp. 71 AD 734 536 6.00 junctions, .. I0-70 Microbial Deterioration of Electrical Insulating and Other Jun. 70 AD 734 538 3,0 Miaterlals of Construction used In Electronic Equipment. IR-71 Arsenic. Sep. 70 AD 734 539 1.00 R-72 Transition Metal Oxides, Amorphous Semiconductors, Sami- Sap. 70 AD 733 251 5.00 conducting Classes, OvshhI-'in 6Effect,, nd Other Switching - (Mai) MP.atertals -A Liteirture Review. AD 746 431 IR-73 Meat Transfer and Cooling of Flartrontc. Components and Equipment. Apr. 72 * 5.OC IR-74 Aircraft Structural Electrical Bonding and Grounding Including Feb. 72 AD 739 356 5.00 Lightning Effects and Electrostatic Charge Buildup on Missiles and Space Vehicles. IR-75 Electro-optic Properties and Modulator Applications of Feb. 72 AD 740 207 5.0:ý Cadmium Telluride, IR-76 Properties of Optically Transparent Adhesives. Jun. 72 I 8.00 IRý77 Electro-opt

40 ic Effect end Properties of Gallium Aren
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