012 Spring 2009 Recitation 10 MOSFET VI Characteristics Channel Length Modulation Back Gate E64256ect Yesterday we discussed two more aspects in MOSFET IV characteristics Channel length modulation Backgate e64256ect Here is the nMOS IV characteris ID: 23982
Download Pdf The PPT/PDF document "Recitation MOSFET VI Characteristics II" is the property of its rightful owner. Permission is granted to download and print the materials on this web site for personal, non-commercial use only, and to display it on your personal computer provided you do not modify the materials and that you retain all copyright notices contained in the materials. By downloading content from our website, you accept the terms of this agreement.
Recitation10MOSFETVICharacteristicsII6.012Spring2009Recitation10:MOSFETVICharacteristics-ChannelLengthModulation&BackGateEectYesterdaywediscussedtwomoreaspectsinMOSFETIVcharacteristics.ChannellengthmodulationBackgateeectHereisthen-MOSIVcharacteristic(ideal,nochannellengthmodulation) WhatabouttheIVcharacteristicforap-MOS? Recitation10MOSFETVICharacteristicsII6.012Spring2009ChannelLengthModulationWhathappenswhen 2LµnCVGSVT)2LIDSPMOSWhenVSD=VSG+VTp,|Qp(L)|=CVSGVSD+VTp Recitation10MOSFETVICharacteristicsII6.012Spring2009NMOS,channeldoping=10 varyfrom05V.=10Vwhen=0;=2Vwhen5V.Whatis?Whatistond,needtoknow42V2V=1V+84V+084V)=67V67V=3V=0V,whatisthechannelelectronchargedensityat MIT OpenCourseWarehttp://ocw.mit.edu 6.012 Microelectronic Devices and CircuitsSpring 2009 For information about citing these materials or our Terms of Use, visit: .