PlasmaEnhanced Chemical Vapor Deposition PECVD Metal Organometallic CVD MOCVD Molecular Beam Epitaxy MBE Deposition 27 and 29 March 2017 CVDVarious Techniques Atmospheric pressure CVD APCVD CVD at atmospheric ID: 627790
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Slide1
EvaporationChemical Vapor Deposition (CVD)Plasma-Enhanced Chemical Vapor Deposition (PECVD)MetalOrganometallic CVD (MOCVD )Molecular Beam Epitaxy (MBE)
Deposition
27 and 29 March 2017Slide2Slide3Slide4
CVD-Various TechniquesAtmospheric pressure CVD (APCVD) – CVD at atmospheric pressure
Low-pressure CVD (LPCVD) – CVD at sub-atmospheric
pressures
Ultrahigh
vacuum CVD (UHVCVD) – CVD at very low pressure, typically below 10
−6
Pa
(~10
−8
torr
)Slide5Slide6
Polysilicon
Polycrystalline silicon
is deposited from
trichlorosilane
(SiHCl
3
) or
silane
(SiH
4
), using the following reactions:
[
SiH
3
Cl → Si + H
2
+
HCl
SiH
4
→ Si + 2 H
2
Silicon
Dioxide
SiH
4
+ O
2
→ SiO
2
+ 2 H
2
SiCl
2
H
2
+ 2 N
2
O → SiO
2
+ 2 N
2
+ 2
HCl
Si(OC
2
H
5
)
4
→ SiO
2
+ byproducts
Silicon Nitride
Silicon nitride is often used as an insulator and chemical barrier in manufacturing ICs. The following two reactions deposit silicon nitride from the gas phase:
3 SiH
4
+ 4 NH
3
→ Si
3
N
4
+ 12 H
2
3 SiCl
2
H
2
+ 4 NH
3
→ Si
3
N
4
+ 6
HCl
+ 6 H
2
Or to deposit
SiNH
:
2 SiH
4
+ N
2
→ 2
SiNH
+ 3 H
2
SiH
4
+ NH
3
→
SiNH
+ 3 H
2
Metals
WF
6
→ W + 3 F
2
WF
6
+ 3 H
2
→ W + 6 HF
Similar reactions for Al using
triisobutylaluminium
(TIBAL) [
Organometallic compounds
]
Molybdenum, Tantalum, Titanium-Recall we discussed “
silicides
” earlier this semester.
Slide7Slide8
A
process that uses ions of an inert gas to dislodge atoms from the surface of a crystalline material, the atoms then being electrically deposited to form an extremely thin coating on a glass, metal, plastic, or other surface. Slide9Slide10Slide11