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a number of studies on Si spintronics, achieving spin transport [1-5] a number of studies on Si spintronics, achieving spin transport [1-5]

a number of studies on Si spintronics, achieving spin transport [1-5] - PDF document

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a number of studies on Si spintronics, achieving spin transport [1-5] - PPT Presentation

re simultaneously realized at up to 294 K 1 The bias voltage dependence of the spin voltages in NL3T and NL4T exhibited obviously different behavior and this finding can be quantitatively unders ID: 176539

simultaneously realized

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