T fa Ultralow Noise Low Distortion Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared

T fa Ultralow Noise Low Distortion Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared T fa Ultralow Noise Low Distortion Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared - Start

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T fa Ultralow Noise Low Distortion Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared




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Presentations text content in T fa Ultralow Noise Low Distortion Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared


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T1115 1115fa Ultralow Noise, Low Distortion, Audio Op Amp High Quality Audio Preamplifiers Low Noise Microphone Preamplifiers Very Low Noise Instrumentation Amplifiers Low Noise Frequency Synthesizers Infrared Detector Amplifiers Hydrophone Amplifiers Low Distortion Oscillators RIAA Phonograph Preamplifier (40/60db Gain) Measured Deviation from RIAA Response. lnput at 1kHz = 1mV RMS Pre-Emphasized FREQUENCY (Hz) 20 0.2000 DEVIATION (dB) 0.0 0.20000 0.40000 0.60000 100 1k 10k 50k 0.4000 0.6000 0.8000 1.000 0.80000 1.0000 18V =25 =25 MEASURED COMPUTER SIMULATED T1115 TA02

INPUT (SELECT PER PHOTO CART- RIDGE) COM IN 47.5k (MM) 100 (MC) IN 18V 18V 18V 18V 18V 18V 35V 35V 470 35V 2200 16V 4.7 FILM 470 35V 35V 35V 100 49.9 562 499 22.6 330pF 15nF 2N4304* ~250 SELECT FOR 2mA RESISTORS 1% *OR USE 2mA CURRENT SOURCE MM = MOVING MAGNET MC = MOVING COIL BYPASS SUPPLIES WITH LOW ESR CAPS OTHER CAPS: HIGH QUALITY FILM NOTE: 2mA 17.8k 82.5k 210k 25k 210 3900pF 3900pF SINGLE POINT BOARD GROUND OPENMM CLOSEDMC COM BOOST OUTPUT A1 T1115 A2 T1010CT T1115 TA01 FEATURES APPLICATIO S DESCRIPTIO TYPICAL APPLICATIO , LTC and LT are registered trademarks of Linear Technology

Corporation. Voltage Noise: 1.2nV/ Hz Max at 1kHz 0.9nV/ Hz Typ at 1kHz Voltage and Current Noise 100% Tested Gain-Bandwidth Product: 40MHz Min Slew Rate: 10V/ s Min Voltage Gain: 2 Million Min  Low THD at 10kHz, A = 10, R L = 600 : 0.002% O = 7V RMS Low IMD, CCIF Method, A = +10: 0.002% = 600 O = 7V RMS The LT 1115 is the lowest noise audio operational ampli- fier available. This ultralow noise performance (0.9nV/ Hz at 1kHz) is combined with high slew rates (>15V/ s) and very low distortion specifications. The RIAA circuit shown below using the LT1115 has very low distortion and little

deviation from ideal RIAA response (see graph).
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T1115 1115fa Operating Temperature Range ..................... 0 C to 70 Storage Temperature Range ..................65 C to 150 Lead Temperature (Soldering, 10 sec).................. 300 Supply Voltage ...................................................... 22V Differential Input Current (Note 5) ...................... 25mA Input Voltage ............................ Equal to Supply Voltage Output Short-Circuit Duration .......................... Indefinite (Note 1) Consult LTC Marketing for parts specified with wider operating

temperature ranges. TOP VIEW IN +IN OUT OS TRIM OS TRIM OVER- COMP N PACKAGE 8-LEAD PDIP JMAX = 115 C, JA = 130 C/W ORDER PART NUMBER LT1115CN8 TOP VIEW SW PACKAGE 16-LEAD PLASTIC SO MAX = 115 C, JA = 130 C/W 16 15 14 13 12 11 10 NC NC TRIM IN +IN NC NC NC TRIM OVERCOMP NC NC NC OUTPUT LT1115CSW ORDER PART NUMBER T1115 POI01 ABSOLUTE AXI U RATI GS WW PACKAGE DESCRIPTIO ELECTRICAL CHARACTERISTICS = 18V, T = 25 C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS THD Total Harmonic Distortion at 10kHz A v = 10, V = 7V RMS , R = 600 < 0.002 % IMD Inter-Modulation

Distortion (CCIF) A v = 10, V = 7V RMS , R = 600 < 0.0002 % OS Input Offset Voltage (Note 2) 50 200 OS Input Offset Current V CM = 0V 30 200 nA Input Bias Current V CM = 0V 50 380 nA Input Noise Voltage Density f o = 10Hz 1.0 nV/ Hz o = 1000Hz, 100% tested 0.9 1.2 nV/ Hz Wideband Noise DC to 20kHz 120 nV RMS Corresponding Voltage Level 136 dB re 0.775V Input Noise Current Density f o = 10Hz 4.7 pA/ Hz (Note 3) f o = 1000Hz, 100% tested 1.2 2.2 pA/ Hz Input Resistance Common Mode 250 M Differential Mode 15 k Input Capacitance 5pF Input Voltage Range 13.5 15.0 V
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T1115 1115fa

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS CMRR Common Mode Rejection V CM = 13.5V 104 123 dB Ratio PSRR Power Supply Rejection V S = 4V to 19V 104 126 dB Ratio VOL Large-Signal Voltage Gain R 2k , V o = 14.5V 2.0 20 V/ 1k , V o = 13V 1.5 15 V/ 600 , V o = 10V 1.0 10 V/ OUT Maximum Output Voltage No Load 15.5 16.5 V Swing R 2k 14.5 15.5 V 600 11.0 14.5 V SR Slew Rate A VCL = 1 10 15 V/ GBW Gain-Bandwidth Product f o = 20kHz (Note 4) 40 70 MHz Open Loop 0utput Impedance V = 0, I = 0 70 Supply Current 8.5 11.5 mA = 18V, T = 25 C, unless otherwise noted. The denotes specifications which apply

over the full operating temperature range, otherwise specifications are at T = 25 C. = 18V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS OS Input Offset Voltage (Note 2) 75 280 OS TA verage Input Offset Drift 0.5 V/ OS Input Offset Current V CM = 0V 40 300 nA Input Bias Current V CM = 0V 70 550 nA Input Voltage Range 13 14.8 V CMRR Common Mode Rejection V CM = 13V 100 120 dB Ratio PSRR Power Supply Rejection V S = 4.5V to 18V 100 123 dB Ratio VOL Large-Signal Voltage Gain R 2k , V o = 13V 1.5 15 V/ 1k , V o = 11V 1.0 10 V/ OUT Maximum Output Voltage No Load 15 16.3 V

Swing R 2k 13.8 15.3 V 600 10 14.3 V Supply Current 9.3 13 mA Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Input Offset Voltage measurements are performed by automatic test equipment approximately 0.5 sec after application of power. Note 3: Current noise is defined and measured with balanced source resistors. The resultant voltage noise (after subtracting the resistor noise on an RMS basis) is divided by the sum of the two source resistors to obtain current noise. Note 4: Gain-bandwidth product is not tested. It is guaranteed by

design and by inference from the slew rate measurement. Note 5: The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 1.8V, the input current should be limited to 25mA. ELECTRICAL CHARACTERISTICS
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T1115 1115fa Wideband Voltage Noise (0.1Hz to Frequency Indicated) RMS VOLTAGE NOISE ( V) 0.01 BANDWIDTH (Hz) 0.1 10 LT1115 TPC02 1k 100 10k 100k 1M 10M = 18V = 25 Wideband Noise, DC to 20kHz FPO 0.5ms/DIV Total Noise vs Matched Source Resistance THD + Noise vs Frequency (A = 10)

THD + Noise vs Frequency (A = 100) THD + Noise vs Frequency (A = 1000) THD + Noise vs Frequency (A = 10) THD + Noise vs Frequency (A = 100) THD + Noise vs Frequency (A = 1000) 0.5 V/DIV FREQUENCY (Hz) 20 TOTAL HARMONIC DISTORTION + NOISE (%) 0.001 0.0005 0.010 100 1k 20k = 10 = 600 IN = 2V P-P (700mV RMS) OUT = 20V P-P (7V RMS) = 25 = 18V T1115 TPC04 FREQUENCY (Hz) 20 0.001 0.010 0.1 100 1k 20k TOTAL HARMONIC DISTORTION + NOISE (%) = 100 = 600 IN = 200mV P-P (70mV RMS) OUT = 20V P-P (7V RMS) = 25 = 18V T1115 TPC05 FREQUENCY (Hz) 20 0.001 0.010 0.1 100 1k 20k TOTAL HARMONIC DISTORTION +

NOISE (%) AV = 1000 = 600 IN = 20mV P-P (7mV RMS) OUT = 20V P-P (7V RMS) = 25 = 18V T1115 TPC06 FREQUENCY (Hz) 20 TOTAL HARMONIC DISTORTION + NOISE (%) 0.001 0.0005 0.010 100 1k 20k = 10 = 600 IN = 2V P-P (700mV RMS) OUT = 20V P-P (7V RMS) = 25 = 18V T1115 TPC07 FREQUENCY (Hz) 20 0.001 0.010 0.1 100 1k 20k TOTAL HARMONIC DISTORTION + NOISE (%) = 1000 IN = 20mV P-P (7mV RMS) OUT = 20V P-P (7V RMS) = 25 = 600 = 18V T1115 TPC09 MATCHED SOURCE RESISTANCE, R ( 10k 10 10 100 100 1k 3k 1.0 0.1 30 300 TOTAL NOISE DENSITY (nV/ Hz) AT 1kHz AT 10Hz 2 R S NOISE ONLY 18V =25 T1115 TPC03 TOTAL

HARMONIC DISTORTION + NOISE (%) 0.001 0.0005 0.1 0.010 FREQUENCY (Hz) 20 100 1k 20k = 100 IN = 200mV P-P (700V RMS) OUT = 20mV P-P (7V RMS) = 25 = 600 = 18V T1115 TPC08 TYPICAL PERFOR A CE CHARACTERISTICS UW
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T1115 1115fa Slew Rate, Gain-Bandwidth-Product vs Overcompensation Capacitor CCIF IMD Test (Twin Equal Amplitude Tones at 13 and 14kHz)* 0.001 0.0001 0.010 0.1 INTERMODULATION DISTORTION (at 1kHz) (%) OUTPUT AMPLITUDE (V RMS 10m 0.1 10 = 10 = 600 = 25 = 18V T1115 TPC10 CCIF IMD Test (Twin Equal Amplitude Tones at 13 and 14kHz)* 0.001 0.0001 0.010 0.1 INTERMODULATION

DISTORTION (at 1kHz) (%) OUTPUT AMPLITUDE (V RMS 10m 0.1 10 = 10 = 10k = 25 = 18V T1115 TPC11 Total Noise vs Unmatched Source Resistance Current Noise Spectrum FREQUENCY (Hz) 10 CURRENT NOISE DENSITY (pA/ Hz) 100 1k 10k 10 100 0.1 TYPICAL T1115 TPC14 1/f CORNER = 250Hz Voltage Noise vs Temperature TEMPERATURE ( C) RMS VOLTAGE NOISE DENSITY (nV/ Hz) 0.8 1.2 30 2.0 0.4 15 75 60 45 1.6 = 18V AT 10Hz AT 1kHz T1115 TPC15 SUPPLY VOLTAGE (V) 1.0 1.25 20 0.75 0.5 10 15 1.5 AT 1kHz = 25 RMS VOLTAGE NOISE DENSITY (nV/ Hz) T1115 TPC16 Voltage Noise vs Supply Voltage Supply Current vs Temperature

SUPPLY CURRENT (mA) 10 TEMPERATURE ( C) 30 15 75 60 45 = 18V = 15V = 5V T1115 TPC17 Output Short-Circuit Current vs Time *See CCIF Test Note at end of Typical Performance Characteristics. TIME FROM OUTPUT SHORT TO GROUND (MINUTES) 50 SHORT-CIRCUIT CURRENT (mA) SINKING SOURCING 40 20 10 01 23 50 20 30 30 40 10 = 18V 25 25 T1115 TPC18 UNMATCHED SOURCE RESISTANCE, R ( 10k 10 10 100 100 1k 3k 1.0 0.1 30 300 TOTAL NOISE DENSITY (nV/ Hz) AT 1kHz AT 10Hz S NOISE ONLY = 18V = 25 T1115 TPC13 OVERCOMPENSATION CAPACITOR (pF) GAIN AT 20kHz SLEW RATE (V/ s) 10 100 100 1000 1000 10000 10000 0.1

10 10 100 OC FROM PIN 5 TO PIN 6 = 18V = 25 T1115 TPC12 GWB SLEW TYPICAL PERFOR A CE CHARACTERISTICS UW
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T1115 1115fa Capacitance Load Handling Common Mode Limit Over Temperature Voltage Gain vs Supply Voltage SUPPLY VOLTAGE (V) 10 100 VOLTAGE GAIN (V/ V) 20 10 15 = 25 L = 2k L = 600 T1115 TPC21 Voltage Gain vs Load Resistance LOAD RESISTANCE (k 0.1 VOLTAGE GAIN (V/ V) 10 100 10 = 18V = 25 LMAX = 27mA AT 25 T1115 TPC22 Voltage Gain vs Frequency FREQUENCY (Hz) 20 VOLTAGE GAIN (dB) 50 70 10k 100k 1M 10M 100M 60 30 40 10 10 = 18V = 25 = 10pF GAIN PHASE 20 50 70 60 30 40 10

10 PHASE MARGIN (DEGREES) T1115 TPC20 Gain, Phase vs Frequency Common Mode Rejection Ratio vs Frequency Power Supply Rejection Ratio vs Frequency FREQUENCY (Hz) = 18V = 25 POWER SUPPLY REJECTION RATIO (dB) 60 80 100 120 140 160 20 40 10k 100k 1M 10M 0.1 1 10 100 1k POSITIVE SUPPLY NEGATIVE SUPPLY T1115 TPC26 Large-Signal Transient Response FPO = 1 = R = 2k = 30pF 5V/DIVISION s/DIVISION FREQUENCY (Hz) 0.01 VOLTAGE GAIN (dB) 10k 100k 1M 10M 0.1 10 100 1k 100M 20 60 80 100 120 140 160 20 40 = 18V = 25 = 2k T1115 TPC19 CAPACITIVE LOAD, (pF) 10 OVERSHOOT (% ) 100 1000 10000 = 18V = 25 20

50 70 80 60 30 40 10 = 1, R = 2k = 10 = 200 = 100 = 20 T1115 TPC23 30pF 2k COMMON MODE LIMIT (V) REFERRED TO POWER SUPPLY 1 2 3 4 +4 +3 +2 +1 = 18V = 5V = 5V TO 18V TEMPERATURE ( C) 30 15 75 60 45 T1115 TPC24 FREQUENCY (Hz) COMMON MODE REJECTION RATIO (dB) 10k 100k 1M 10M 10 100 1k 60 80 100 120 140 20 40 = 18V = 25 T1115 TPC25 TYPICAL PERFOR A CE CHARACTERISTICS UW
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T1115 1115fa FPO FPO Small-Signal Transient Response Maximum Output vs Frequency (Power Bandwidth*) FREQUENCY (Hz) 10k PEAK-TO-PEAK OUTPUT VOLTAGE (V) 20 25 30 100k 1M 10M 15 10 = 18V = 25 = 2k

*POWER BANDWIDTH = POWER BANDWIDTH SLEW RATE OP = PEAK-TO-PEAK AMPLIFIER OUTPUT VOLTAGE T1115 TPC29 Closed-Loop Output Impedance 10 OUTPUT IMPEDANCE ( 10 100 100k 0.1 0.01 0.001 100 1k 10k 1M = 1mA = 18V = 25 FREQUENCY (Hz) = 5 T1115 TPC30 = 1000 CCIF Testing Note: The CCIF twin-tone intermodulation test inputs two closely spaced equal amplitude tones to the device under test (DUT). The analyzer then measures the intermodulation distortion (IMD) produced in the DUT by measuring the difference tone equal to the spacing between the tones. The amplitude of the lMD test input is in sinewave

peak equivalent terms. As an example, selecting an amplitude of 1.000V will result in the complex IMD signal having the same 2.828V peak-to-peak amplitude that a 1.000V sinewave has. Clipping in a DUT will thus occur at the same input amplitude for THD + N and IMD modes. The LT1115 is a very high performance op amp, but not necessarily one which is optimized for universal application. Because of very low voltage noise and the resulting high gain-bandwidth product, the device is most applicable to relatively high gain applications. Thus, while the LT1115 will provide notably superior

performance to the 5534 in most applications, the device may require circuit modifications to be used at very low noise gains. The part is not generally applicable for unity gain followers or inverters. In general, it should always be used with good low impedance bypass capacitors on the supplies, low impedance feedback values, and minimal capacitive load- ing. Ground plane construction is recommended, as is a compact layout. 20mV/DIVISION = 1, = R = 2k = 30pF = 80pF 0.2 s/DIVISION TYPICAL PERFOR A CE CHARACTERISTICS UW Voltage Noise vs Current Noise The LT1115s less than 1nV/ Hz voltage

noise matches that of the LT1028 and is three times better than the lowest voltage noise heretofore available (on the LT1007/1037). A necessary condition for such low voltage noise is operating the input transistors at nearly 1mA of collector currents, because voltage noise is inversely proportional to the square root of the collector current. Current noise, however, is directly proportional to the square root of the collector current. Consequently, the LT1115s current noise is significantly higher than on most monolithic op amps. APPLICATIO S I FOR ATIO WU UU
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T1115 1115fa

Therefore, to realize truly low noise performance it is important to understand the interaction between voltage noise (e ), current noise (i ) and resistor noise (r ). Total Noise vs Source Resistance The total input referred noise of an op amp is given by e t = [e + r + (i eq 1/2 where R eq is the total equivalent source resistance at the two inputs and r n = 4kTR eq = 0.13 eq in nV/ Hz at 25 As a numerical example, consider the total noise at 1kHz of the gain of 1000 amplifier shown below. eq = 100 + 100 ||100k 200 n = 0.13 200 = 1.84nV/ Hz n = 0.85nV/ Hz n = 1.0pA/ Hz t = [0.85 + 1.84 +

(1.0 x 2.0) 1/2 = 2.04nV/ Hz output noise = 1000 e = 2.04 V/ Hz At very low source resistance (R eq < 40 ) voltage noise dominates. As R eq is increased resistor noise becomes the largest termas in the example aboveand the LT1115s voltage noise becomes negligible. As R eq is further increased, current noise becomes important. At 1kHz, when R eq is in excess of 20k , the current noise component is larger than the resistor noise. The Total Noise vs Matched Source Resistance plot in the Typical Performance Characteristics section, illustrates the above calculations. 100 100k 100 LT1115 T1115

AI01 The plot also shows that current noise is more dominant at low frequencies, such as 10Hz. This is because resistor noise is flat with frequency, while the 1/f corner of current noise is typically at 250Hz. At 10Hz when R eq > 1k , the current noise term will exceed the resistor noise. When the source resistance is unmatched, the Total Noise vs Unmatched Source Resistance plot should be con- sulted. Note that total noise is lower at source resistances below 1k because the resistor noise contribution is less. When R s > 1k total noise is not improved, however. This is because bias current

cancellation is used to reduce input bias current. The cancellation circuitry injects two correlated current noise components into the two inputs. With matched source resistors the injected current noise creates a common-mode voltage noise and gets rejected by the amplifier. With source resistance in one input only, the cancellation noise is added to the amplifiers inherent noise. In summary, the LT1115 is the optimum amplifier for noise performanceprovided that the source resistance is kept low. The following table depicts which op amp manufactured by Linear Technology should be used to

minimize noiseas the source resistance is increased beyond the LT1115s level of usefulness. Best Op Amp for Lowest Total Noise vs Source Resistance Note 1: Source resistance is defined as matched or unmatched, e.g., S = 1k means: 1k at each input, or 1k at one input and zero at the other. SOURCE RESISTANCE BEST OP AMP (NOTE 1) AT LOW FREQ (10Hz) WIDEBAND (1kHz) 0 to 400 LT1028/1115 LT1028/1115 400 to 4k LT1007/1037 LT1028/1115 4k to 40k LT1001* LT1007/1037 40k to 500k LT1012* LT1001* 500k to 5M LT1012* or LT1055 LT1012* > 5M LT1055 LT1055 These op amps are best utilized in applications

requiring less bandwidth than audio. APPLICATIO S I FOR ATIO WU UU
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T1115 1115fa THD + Noise vs Frequency (Figure 1) Figure 1. Balanced Transformerless Microphone Preamp FREQUENCY (Hz) 20 0.010 TOTAL HARMONIC DISTORTION + NOISE (%) 0.1 100 1k 20k = 25 = 100k IN = 10mV RMS OUT = 2.92V RMS = 150 T1115 TA04 F 35V LOW ESR F 35V LOW ESR R1 1k, 0.1% R1 R2 1k, 0.1% R2 R4 316k, 0.1% R4 R3 316k, 0.1% R3 INPUT 30k 1% 4.7 FILM OUT 10k 1% 100 1% 18V 18V NOTE: MATCH RESISTOR PAIRS TO 0.1% LT1115 T1115 TA03 TYPICAL APPLICATIO S
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T1115 10 1115fa NOTE 3: FOR BETTER NOISE

PERFORMANCE AT SLIGHTLY LESS DRIVE CAPABILITY: R1 = 43 R2 = 392 DELETE C1. INPUT 18V 18V 18V 18V 18V 18V 35V 35V 35V 35V 35V 35V 2N4304* IN 100 100 100k 100k ~250 SELECT FOR 2mA OUTPUT R2 BOOST 49.9 C1 33pF 33.2k 1% 33.2k 1% 909 R1 T1115 T1010CT T1097 T1115 TA05 RESISTORS 1% METAL FILM CAPACITORS BYPASS; LOWER ESR OTHER: POLYESTER OR OTHER HIGH QUALITY FILM. *OR USE 2mA CURRENT SOURCE. NOTE 1: USE SINGLE POINT GROUND. NOTE 2: USE 470 F CAPACITORS AT EACH INCOMING SUPPLY TERMINAL (I.E. AT BOARD EDGE). OPTIONAL SERVO LOOP LOWERS OFFSET TO < 50 2mA Figure 2. Low Noise DC Accurate x 10

Buffered Line Amplifier THD + Noise vs Frequency (Figure 2) FREQUENCY (Hz) 20 0.0001 0.001 0.010 100 1k 20k TOTAL HARMONIC DISTORTION + NOISE (%) = 25 = 18V IN = 500mV RMS OUT = 5V RMS = 10 = 600 T1115 TA07 TYPICAL APPLICATIO S
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11 T1115 1115fa Figure 3. RIAA Moving Coil Pre-Pre Amplifier (40/30dB Gain Low Noise Servod Amplifier) Noise vs Frequency (Figure 3) 18V 18V 18V 18V 18V 18V 100k 100V 2.49k 100 75 475 100 35V 35V 100 35V INPUT 0.01 GAIN: 40dB 30dB 35V 100V 1M 1M 100pF OUTPUT TO RIAA STAGE RESISTORS 1% METAL FILM CAPACITORSBYPASS: LOW ESR OTHER: HIGH QUALITY

FILM 24.9 NOTE 1: USE SINGLE POINT GROUNDING TECHNIQUES T1115 T1097 T1115 TA06 FREQUENCY (Hz) 20 10n NOISE (V) 100n 10 100 1k 20k = 25 = 18V INPUT GROUNDED NOTE: NOISE AT 1kHz REFERRED TO INPUT ~2nV T1115 TA09 CCIF IMD Test (Twin Tones at 13 and 14kHz) (Figure 3) OUTPUT AMPLITUDE ( RMS 0.1 0.0001 0.1 0.010 0.001 10 INTERMODULATION DISTORTION (AT 1kHz) (IMD) (%) = 25 S = 18V = 100k T1115 TA08 TYPICAL APPLICATIO S
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T1115 12 1115fa Deviation from RIAA Response Input at 1kHz = 232 RMS Pre-Emphasized (Figure 4) Figure 4. Moving Coil Passive RIAA Phonograph Pre-Amp THD + Noise

vs Frequency Input at 1kHz = 232 RMS Pre-Emphasized (Figure 4) FREQUENCY (Hz) 20 TOTAL HARMONIC DISTORTION + NOISE (%) 0.010 100 1k 20k 0.001 0.1 = 18V = 100k = 10 = 25 T1115 TA12 DEVIATION (dB) FREQUENCY (Hz) 20 0.5000 0.50000 0.40000 0.30000 0.20000 0.10000 0.4000 0.3000 0.2000 0.1000 0.0 100 1k 20k LT1115 TA11 = 18V = 100k = 10 = 25 35V 35V 35V 470 35V 470 35V 35V R2 C1 C2 0.483 100pF 2.49k R1 6081 100 499 490 499 100k 10k 12.1 OUTPUT RIAA NETWORK MOVING COIL INPUT 0.01 18V 18V 4.7 FFIL 0.1645 RESISTORS 1% METAL FILM CAPACITORSBYPASS: LOW ESR OTHER: HIGH QUALITY FILM NOTE 1: 1kHz GAIN

= 53dB NOTE 2: IN RIAA NETWORK VALUES SHOWN ARE MEASURED AND PRODUCE THE DEVIATION FROM RIAA GRAPH SHOWN. THE CALCULATED EXACT VALUES ARE: R1-6249 C1-0.161 R2-504 C2-0.47 LT1115 LT1056 T1115 TA10 TYPICAL APPLICATIO S
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13 T1115 1115fa Figure 5. High Performance Transformer Coupled Microphone Pre-Amp Risetime of High Performance Transformer Coupled Microphone Pre-Amp (Figure 5) Frequency Response (Gain = 20dB) Balanced In/ Balanced Out (Figure 5) THD + Noise vs Frequency (Gain = 20dB) Balanced In/ Balanced Out (Figure 5) FREQUENCY (Hz) 0.0005 TOTAL HARMONIC DISTORTION +

NOISE (%) 0.010 0.001 0.1 20 100 1k 20k = 18V IN = 0.95V RMS = 600 = 150 = 25 T1115 TA15 FREQUENCY (Hz) AMPLITUDE (dB) REFERRED TO 1kHz 1.000 2.000 3.000 4.000 5.000 1.0000 0.0 10 1k 10k 100k 100 = 18V IN = 0.95V RMS = 600 = 150 = 25 T1115 TA16 RISETIME OF PRE-AMP = 20dB IN = 400mV 2kHz SQUARE WAVE MEASURED AT SINGLE- ENDED OUTPUT BEFORE TRANSFORMER T1115 T1010CT T1097 INPUT CASE JENSEN JE-16-A/B JENSEN JE-11-BM WHT BLK BRN BRN ORANGE 150 MICROPHONE RED RED YELLOW YEL 6.19k 100 100k 100k 100 100pF 22 49.9 250 SELECT FOR 2mA 2N4304** 2mA 35V 35V 35V 35V 35V 470 35V 470 35V 35V 18V 18V 18V

18V 1N4002 1N4002 IN 2.5k REV. AUDIO APER BOOST 2.49k OUT 10 10 10k OPTIONAL SINGLE-ENDED TO BALANCED OUTPUT TRANSFORMER 4.99 RESISTORS 1% METAL FILM CAPACITORSBYPASS: LOW ESR OTHER: HIGH QUALITY FILM NOTE: USE SINGLE POINT GROUND ** JENSEN NETWORK VALUESFACTORY SELECTED. JE-16-A/B & JE-11-BM AVAILABLE FROM: JENSEN TRANSFORMERS 10735 BURBANK BLVD. N. HOLLYWOOD, CA 91601 (213) 876-0059 OR USE 2mA CURRENT SOURCE T1115 TA13 TYPICAL APPLICATIO S
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T1115 14 1115fa Figure 6. Ultralow THD Oscillator (Sine Wave) (< 5ppm Distortion) LT1115 LT1022 LT1006 LT1010 15V 15V 15V 15V 15V

15V 15V 15V 15V 15V 35V 35V 35V 35V 35V 35V 35V R1 R2 100 10k 10k 10 10pF 500 (20T) 2.4k 5.6k 2k 2k 200 VACTEC VTL 5C10 IN 100 200 120k C2 0.1 FILM BOOST = 49.9 MOUNT, 1N4148's IN CLOSE PROXIMITY 4.7k 20V P-P OUTPUT 1k 470 35V 470 35V C1 0.1 F FILM 2.5V 1.2V T1004's f = RC WHERE R1C1 = R2C2 MEASURED WITH R1 = R2 = 1.5k <5ppm DISTORTION AND NOISE AT 1kHz, 20V P-P INTO 100 MEASUREMENT LIMITED BY RESOLUTION OF AUDIO PRECISION TEST SYSTEM ALL BYPASS CAPACITORS: LOW ESR FILM CAPACITORS = ASC TYPE 315 T1115 TA17 TYPICAL APPLICATIO S
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15 T1115 1115fa Information furnished by

Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. N8 Package 8-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510) N8 1002 .065 (1.651) TYP .045 .065 (1.143 1.651) .130 .005 (3.302 0.127) .020 (0.508) MIN .018 .003 (0.457 0.076) .120 (3.048) MIN 12 87 6 .255 .015* (6.477 0.381) .400* (10.160) MAX .008 .015 (0.203 0.381) .300 .325 (7.620

8.255) .325 +.035 .015 +0. 889 0. 381 8.255 NOTE: 1. DIMENSIONS ARE INCHES MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm) .100 (2.54) BSC PACKAGE DESCRIPTIO
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T1115 16 1115fa Linear Technology Corporation 630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507  www.linear.com LW/TP 1102 1K REV A PRINTED IN USA INEAR TECHNOLOGY CORPORATION 1989 SW Package 16-Lead Plastic Small Outline (Wide .300 Inch) (Reference LTC DWG # 05-08-1620) PACKAGE DESCRIPTIO S16 (WIDE)

0502 NOTE 3 .398 .413 (10.109 10.490) NOTE 4 16 15 14 13 12 11 10 9 23 78 N/2 .394 .419 (10.007 10.643) .037 .045 (0.940 1.143) .004 .012 (0.102 0.305) .093 .104 (2.362 2.642) .050 (1.270) BSC .014 .019 (0.356 0.482) TYP 8 TYP NOTE 3 .009 .013 (0.229 0.330) .005 (0.127) RAD MIN .016 .050 (0.406 1.270) .291 .299 (7.391 7.595) NOTE 4 45 .010 .029 (0.254 0.737) INCHES (MILLIMETERS) NOTE: 1. DIMENSIONS IN 2. DRAWING NOT TO SCALE 3. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH

OR WITHOUT ANY OF THE OPTIONS 4. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) .420 MIN .325 .005 RECOMMENDED SOLDER PAD LAYOUT .045 .005 123 N/2 .050 BSC .030 .005 TYP


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