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Switching Power Supply Design: EMI Reduction - PowerPoint Presentation

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Switching Power Supply Design: EMI Reduction - PPT Presentation

Author Marc DavisMarsh Last Edited by Richard Garvey 51612 1 Table of Contents 2 EMI on TV Picture EMI Nonisolated Isolated Snubbers Component Selection 3 2011 National Semiconductor Corporation ID: 601932

path emi high converter emi path converter high layout current noise critical power area ground conducted loop pcb buck

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Slide1

Switching Power Supply Design: EMI Reduction

Author: Marc Davis-MarshLast Edited by Richard Garvey, 5/16/12

1Slide2

Table of Contents

2

EMI on TV Picture

EMI

Non-isolated

Isolated

Snubbers

Component

SelectionSlide3

3

© 2011 National Semiconductor Corporation.

Introduction – EMI Overview

AGENDA

Noise Sources Identification

Minimize EMI Generation by Layout

Protect Sensitive Circuits From Noise

Conducted EMI and EMI Filters

Snubbers

and Components

Summary

Slide4

4

Introduction – EMI Overview

AGENDA

Noise Sources Identification

Minimize

Noise

Generation

by

Layout

Protect

Sensitive Circuits

from

Noise

Conducted EMI and EMI Filters

Snubbers

and Components

Summary

Slide5

What is EMI & EMC?

5Slide6

6

EMI/EMC Standards

EMC Standards vary by…

Region

US = FCC

Europe = CISPR = EN

Application usageConsumer

MedicalAutomotiveWhat standards do we useFCC part 15 BCISPR 22 = EN 55022Slide7

EMI

/EMC Standards Organizations

United States

Electrostatic Discharge Association (ESD)

Federal Communication Commission (FCC)

Institute of Electrical and Electronic Engineers (IEEE)

Institute of Interconnecting and Packaging Electronic Circuits (IPC)

National Institute of Standards and Technology (NIST)

International Society for Measurement and Control (ISA)

National Standards System Network (NSSN)Society of Automotive Engineers (SAE) International

Telecommunication Industry Association (TIA)Underwriters Laboratories, Inc (UL)US Standard Developing Organizations (ANSI)

International

European Committee for

Electrotechnical

Standardization (CENELEC)

European Telecommunications Standards (ETSI)

Institute of Electrical and Electronic Engineers (IEEE)

International

Electrotechnical

Commission (IEC)

International Organization for Standardization (ISO)

International Special Committee on Radio Interference (CISPR)

International Telecommunication Union (ITU)

7Slide8

Links

EU

EMC Directives:

http://ec.europa.eu/enterprise/sectors/electrical/documents/emc/legislation/index_en.htm

EU

EMC Standards List (24 Feb 2011

):

http

://eur-lex.europa.eu/LexUriServ/LexUriServ.do?uri=OJ:C:2011:059:0001:0019:EN:PDFFCC Rules (Title 47 Telecommunications, Part 2):

http://www.access.gpo.gov/nara/cfr/waisidx_10/47cfr2_10.htmlFCC Rules (Title 47 Telecommunications, Part 15) Information Technology Equipment (ITE)

:http://www.access.gpo.gov/nara/cfr/waisidx_10/47cfr15_10.htmlFCC

Rules (Title 47 Telecommunications, Part 18)

Industrial, Scientific, & Medical Equipment (ISM)

:

http://www.access.gpo.gov/nara/cfr/waisidx_10/47cfr18_10.html

FDA

Inspection and Compliance (Medical devices are exempt from FCC regulations):

http://

www.fda.gov/ICECI/Inspections/InspectionGuides/ucm090621.htm

8Slide9

9

Conducted vs. Radiated Emission Limits

Conducted

Radiated

FCC/CISPR Conducted Emission Limits

FCC and CISPR standards somewhat different

FCC B (consumer) much more stringent than FCC A (commercial, industrial, and business)

FCC and CISPR standards the same

FCC/CISPR Radiated Emission Limits

Measured at 10mSlide10

10

How Does Noise Show Up in the System?

NOISE SOURCE

Emissions

SUSCEPTIBLE SYSTEM

Immunity

ENERGY COUPLING MECHANISM

Conducted

Electric Fields

Magnetic Fields

Radiated

Low Frequency

Low, Mid Frequency, LC Resonance

High FrequencySlide11

11

Engineering Approach To Mitigate EMI

SUSCEPTIBLE SYSTEM

NOISE SOURCE

Unwanted Emissions

ENERGY COUPLING MECHANISM

Conducted

Electric Fields

Magnetic Fields

Radiated

Identify Significant EMI Sources

Figure Out EMI Coupling Paths

Engineer Circuit Layout To Mitigate EMI

EMI Filters

EMI Filters

Shielding

Shielding

Add EMI Filter /

Snubber

/ ShieldingSlide12

12

SMPSs Are Big Generators Of Radiated And Conducted Emissions

Due to

High power

High

di

/dt on the switches and diodesFast transients (voltage and current)

Not generally enclosed (not shielded)Parasitic inductance and capacitance in current paths

Switch Mode Power Supply

Supply

LOAD

Causing

Noise Conducted to Supply and / or Load

Interfere with circuits in the same system

Interfere with

other

systemsSlide13

Electrically Small Loop Antennas

Electro Magnetic Field Energy is *:

f

: frequency of interest (Hz)

A: loop area of the current path (meters squared)

I

: Current magnitude at the frequency of interest (A)R is measured distance between source and receiver (meters)

13

*Henry Ott’s classic Noise Reduction Techniques in Electronic SystemsSlide14

14

Any

Current must

go from a source of energy and they must

RETURN

to the same source

Theory Behind EMI Mitigation by PCB Layout

Self Inductance

Voltage Spike

Reduce loop area reduces L

B fields cancel each other if current return path is close to current path

14Slide15

15

Which PATH current is going to take?

Current Takes the Path of

Least IMPEDANCE

, NOT the Path of Least RESISTANCE!

Z = R +

jX

High freq components contained by high

di/dt

current can go through different path than their low freq counterpartThus, the loop area enclosed by high freq components can be completely different

Theory Behind EMI Mitigation by PCB Layout

DC Current Path

HF Current PathSlide16

Theory Behind EMI Mitigation by PCB Layout

ElectroMagnetic Field Energy is Proportional To*:

f

2

: frequency of the harmonic of interest

From switching frequency and di/dtA: loop area of the current path

If: current magnitude at the frequency of interest1/r: measured distance r

16

*Henry Ott’s classic Noise Reduction Techniques in Electronic Systems

Reduce Noise Generation

Reduce fsw and high freq component in di

/

dt

Reduce high freq loop areaSlide17

Steps To Mitigate EMI In PCB

Switching components generate high di/dt current

 where is the return path?

17

Loop Contains high

di

/

dt

current is CRITICAL PATH.

Slow down switching action

Reduce high freq path enclosed area Slide18

18

EMI Mitigation

Choice of Switching Frequency

Not just for efficiency/space trade-offs

Beware of EMI “keep out” zones

Automotive = 500kHz < AM Band > 2MHz

ADSL = >1.24MHz to avoid channel interference

Harmonics

Choose switching frequency that keeps beat frequency and harmonics out of the EMI range

Spread-Spectrum Switching

LM5088 dithers frequency

and shows up to 20dB

decrease in EMI

Fundamental switching frequency spike reduction and sidebands using spread spectrum switching in the LM5088

Slide19

19

AGENDA

Noise Sources Identification

EMI Overview – definition and standards

Minimize

EMI

Generation

by

Layout

Protect

Sensitive Circuits

from

Noise

Conducted EMI and EMI Filters

Snubbers

and Components

Summary

Slide20

20

Identify Critical Path

Buck Converter

Boost Converter

Buck-Boost Converter

Critical path

Switching Current exist in the input sideSlide21

21

Identify Critical Path

Buck Converter

Boost Converter

Buck-Boost Converter

Critical pathSlide22

22

Identify Critical Path

Buck Converter

Boost Converter

Buck-Boost Converter

Critical path

Non-Inverting

InvertingSlide23

What Can We Do In PCB Layout?

--Buck example

Buck Converter

Boost Converter

Buck-Boost Converter

Minimize critical path area

Separate noisy ground path from quiet ground

23Slide24

24

Buck Converter

Boost Converter

Buck-Boost Converter

Non-Inverting

What Can We Do In PCB Layout?

--Buck-Boost example

-

+Slide25

25

25

Identify Critical Paths In Isolated Converters

Flyback

Converter

Forward Converter

Critical paths

Push-Pull Converter

Half Bridge Converter

Full Bridge ConverterSlide26

26

26

Identify Critical Paths In Isolated Converters

Flyback

Converter

Forward Converter

Critical paths

Push-Pull Converter

Half Bridge Converter

Full Bridge ConverterSlide27

27

27

Identify Critical Paths In Isolated Converters

Flyback

Converter

Forward Converter

Critical paths

Push-Pull Converter

Half Bridge Converter

Full Bridge ConverterSlide28

28

28

Identify Critical Paths In Isolated Converters

Flyback

Converter

Forward Converter

Critical paths

Push-Pull Converter

Half Bridge Converter

Full Bridge ConverterSlide29

29

29

Identify Critical Paths In Isolated Converters

Flyback

Converter

Forward Converter

Critical paths

Push-Pull Converter

Half Bridge Converter

Full Bridge ConverterSlide30

30

AGENDA

Minimize

EMI

Generation

by

Layout

EMI Overview – definition and standards

Noise Sources Identification

Protect

Sensitive Circuits

from

Noise

EMI Filters

Snubbers

and Components

Summary

Slide31

EMI Mitigation by PCB Layout

BUCK Example

Bypass Caps in High

di

/

dt

loop should be placed as close as possible to the switching components

Low side FET SOURCE should be connected as close as possible to the input capacitorApply to critical paths in other SMPS topologies

31

Critical Path Area Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & DriverSlide32

32

Lower EMI can be achieved by…

Place capacitors on

same side of board

as component being

decoupled

Locate as close to

pin as possible

Keep trace

width thick and minimized

Connecting to decoupling capacitors

Connecting to output capacitorsSlide33

33

Customer Layout Example

BUCK controller Input Cap GND connection

Input Cap GND

LS FET GND

Input Cap GND

LS FET GND

LS FET GND

Input Cap GND

Customer Board

Eval

BoardSlide34

EMI Mitigation by PCB Layout

Buck Regulator Comparison with Cin location (single Cin, smaller loop area)

34

Critical Path

Area

Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & Driver

VIN

VOUT

SW 14.5V max

VOUT 47mVpp

41dBµV/m

34Slide35

EMI Mitigation by PCB Layout

Buck Regulator comparison with Cin location (single Cin, 2.5 times larger area)

35

Critical Path

Area

Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & Driver

SW 18.1V max

VOUT 75mVpp

44dBµV/m

Comparison

SW

max

(

V)

Vout

p2p (mV)

EMI

peak (

dBµV

/m)

Smaller Area

14.5

47

41

Larger

Area

18.1

75

44

35Slide36

EMI Mitigation by PCB Layout

Swings from V

IN

or V

OUT

to ground at fsw. Very high dv

/dt node! Electrostatic radiatorRequires a contradiction: As large as possible for current handling and thermal performance,

yet as small as possible for electrical noise reasonsSolutions:Keep inductor very close to FETs, sw-node short & wide

Minimum Copper Width Requirement:36

Critical Path

Area Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & Driver

Where T = Trace width in mils, A is current in Amps, and CuWt is copper weight in Ounces. Formula works over a range of 1A to 20A.

Or roughly 30mils per amp for 1 Oz Cu and 60 mils per amp for ½ Oz CuSlide37

EMI Mitigation by PCB Layout

Minimize loop area enclosed by high-side FETs, low-side FETs, and bypass caps

Connect the low-side FET’s source to the input- cap ground directly on the same layer, then connect to the ground plane

Use copper pours for drain and source connections to power FETs

Minimize stray inductance in the power path

37

Critical Path

Area

Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & DriverSlide38

EMI Mitigation by PCB Layout

Gate drives are also high

di

/

dt

paths, lower current levelPlace drivers close to MOSFETsKeep C

BOOT and VDD bypass caps very close to driver and FETsMinimize loop area between gate drive and its return path: from source of FET to bypass cap ground

Minimize stray inductance in the power pathAvoid vias in di/dt

pathUse short trace and width > 20mil for CBOOT, CVDD-bypass, and Gate drive

38

Critical Path Area

Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & DriverSlide39

R

esistor

in Series w/ Gate

to Slow Down both Rising and Falling Rates; Diode to Reduce Falling Time

EMI Mitigation by PCB Layout

Contradiction on SW node transition rate:

Faster Rising and Falling Times

= Less sw losses = higher EMI generated

Options to Slow Down Rise / Fall TimeUse gate resistor to soften gate ringingKeep between 1 to 10ohms

Low capacitance schottky diode to improve turn off time39

Critical Path Loop Reduction

Grounding

High

di

/

dt

Caps

SW Node

FETs & Driver

Resistor in Series with

Cboot

to Slow Down HS FET Rising RateSlide40

EMI Mitigation by PCB Layout

Ground Plane

Return Current Takes The Least

IMPEDANCE

Path

Unbroken Ground Plane Provides Shortest Return Path – Image current return path

40

Critical Path Loop Reduction

Grounding

Current flow in top layer trace

Ground Plane

Return current path in unbroken ground plane directly under path

Area minimized

B field minimized

Trace or Cut on the ground plane

Ground Plane

Return current path enclose much larger area if the direct path is blockedSlide41

EMI Mitigation by PCB Layout

Ground Shielding Example – Two Layer Board

41

Critical Path

Area

Reduction

Grounding

SW 15.7V max

VOUT 30mVpp

32.5dB

μ

V/mSlide42

EMI Mitigation by PCB Layout

Ground Shielding Example – Four Layer Board w/ Identical Layout / BOM – Two GND Planes in between

42

Critical Path

Area

Reduction

Grounding

SW 13V max

VOUT 23mVpp

27.5dB

μ

V/m

Comparison

SW max

(V)

Vout

p2p

(mV)

EMI

peak (

dBµV

/m)

Two Layer

15.7

30

32.5

Four

Layer

13.0

23

27.5Slide43

EMI Mitigation by PCB Layout

Ground Shielding Example – Four Layer Board w/ Identical Layout / BOM –

w/ CUT under SW node

43

Critical Path

Area

Reduction

Grounding

SW 15.7V max

VOUT 26mVpp

32.5dB

μ

V/m

Comparison

SW max

(V)

Vout

p2p

(mV)

EMI

peak (

dBµV

/m)

Two Layer

15.7

30

32.5

Four

Layer

13.0

23

27.5

Four

Layer w/ GND cut

15.7

26

32.5Slide44

EMI Mitigation by PCB Layout

Ground Plane

Unbroken Ground Plane provides shortest return path to reduce EMI and Best Shielding

Don’t cut ground plane

Keep high power, high

di

/dt current away from ground plane, run separate paths on the top layer to contain itGround plane is for DC distribution and signal reference only, ideally, there should be no current flow on ground plane

Bypass to ground pins, not the plane

44

Critical Path Area

Reduction

GroundingSlide45

45

Switcher Power Modules

(LMZ23610)

CISPR 22 Measurements

10 Amp Current Sharing Eval board

2.8 mm

15 mm

5.9

mm

15 mm

Ease of Use

Webench, Easy to mount & rework

Internal Comp

Built in Vin Capacitors to solve EMI issue, & shielded inductor Slide46

Nano Module – LMZ10501/0 (1A/650mA)

Extremely Small Solution Size

Place on front-side or back-side of PCB

LLP-8 Footprint

Excellent Performance

Low output voltage ripple

High efficiency

Fast transient response

Mounted on PCB

Expanded View

Low EMI

2.5 mm

1.2

mm

3 mm

Complies with CISPR22 Class B Standard

C

OUT

= 10uF

Vout = 1.8V

46Slide47

Innovative Packaging

Key Features:LLP Footprint

Micro SMD is a standard National package running in high volume

Moisture sensitivity level 3

Standard soldering process

Reliability testing on complete module according to NSC standards

RoHS compliance to IPC 1752

1.2

mm

3 mm

2.5 mm

Top View

Side View

Solder Reflow Profile

47Slide48

Passing CISPR22 Class B Radiated EMI

The evaluation board with the default components complies with the CISPR 22 Class B radiated emissions standard.

5Vin, 1.8Vout, 1A load

10uF input capacitor

10uF output capacitor

1nF VCON capacitor

48Slide49

Nano Module - Cispr 25 Class 5 EMI (Radiated)

49

49Slide50

Passing CISPR 25 Class 5 Radiated EMI

Adding two small 0.1μF 0805 input capacitors results in CISPR 25 Class 5 radiated emissions standard compliance

50Slide51

51

AGENDA

Protect

Sensitive Circuits

from

Noise

EMI Overview – definition and standards

Noise Sources Identification

Minimize

EMI

Generation

by

Layout

Conducted EMI and EMI Filters

Snubbers

and Components

Summary

Slide52

Protect EMI Sensitive Nodes from Noise

52

Vout

sensing path and feedback node

Compensation network

Current sensing path

Frequency setting

Monitoring and Protecting Circuits

… …

Sensitive Nodes:

Control and Sensing Circuits

SW node

Inductor

High

di

/

dt

bypass caps

MOSFETs

Power Diodes

… …

Noisy Nodes:

Any Nodes in High

di

/

dt

Loop

Shielded by Ground / Power Planes

Away from EMI sourceSlide53

Good Practice to Protect EMI Sensitive Nodes

Use Layers – four layer board stack-up plan

Top: All high power parts and high

di

/

dt paths, signals that can be routed away from high di/dt paths

Mid1: Ground PlaneMid2: Ground Plane / Power Plane / Signal & low power tracesBottom: low power and signal traces

Flood unused area with copper for improved thermal performance and shieldingPlace and RouteKeep all bypass caps close to pins The higher the impedance and/or gain, the smaller the node should be, especially inputs to op-amps: FB pin, comp pin, etcLow impedance nodes can be wide, such as VIN and VOUT

53Slide54

Protect EMI Sensitive Nodes – Cont.

Make long runs to low impedance nodes, short runs to high impedance nodes. Apply to

Place output voltage divider close to the FB node (high impedance), farther from Vout (low impedance), if have to choose

54

×

Route Sense+/Sense- traces parallel to one another – minimize differential-mode noise pickup. Apply to

Current sensing traces

Voltage remote sense lines

Keep sensitive small signal traces thin and further away from

surrounding signals

– lower capacitance couplingSlide55

Customer Layout Example

LM20k 5A Buck regulator

55

SW

L

Res Divider

FB trace

Identified layout problems

Vout sensing point is right under the inductor – noise pick up

FB trace route very close to SW node and di/dt loop – noise coupling

55Slide56

Customer Layout Example

More problems in this layout

56

GND

CIN

GND

CIN GND to LS source path (high di/dt) undefined, through gnd plane

AVIN bypass cap gnd return path very long

Comp network close to high di/dt loop

PGND pins

COMP RC

AVINSlide57

Check List

If your board can not pass Radiated EMI

Check high di/dt loop layout, especially CIN gnd to LS FET source connection

Check GND shielding

Suggest Shielded L

Use twisted pair at input / output (where switching current exists)

Suggest to reduce f

sw or switch transition rateConsider adding conducted EMI filter (also alleviate Radiated EMI)

If your board is not working properly (no schematic reason) or too much voltage spikes, checkHigh di/dt loop layout

GND shielding Sensitive nodes layout, especially FB divider and routingSensitive node groundingBypass caps

Add small bypass caps (e.g. 47nF) to Vin and Vout as close as possibleAdd snubber to SW node

57Slide58

58

AGENDA

Conducted EMI and EMI Filters

EMI Overview – definition and standards

Noise Sources Identification

Minimize

Noise

Generation

by

Layout

Protect

Sensitive Circuits

from

Noise

Snubbers

and Components

Summary

Slide59

DM Conducted EMI

Differential Mode Conducted EMI

In DC-DC converter topology, only Hot and Neutral lines, no CM EMI involved

Involves the Normal Operation of the Circuit

Does not involve Parasitics, except input / output CAP ESR and ESL

Only Related to CURRENT, not voltage

For example, with the same power level Buck converter, lower input voltage means higher input current, thus worse conducted EMI

Why we care?Excessive Input and/or Output Voltage Ripples can compromise operation of Supply and/or Load

59

Switch Mode Power Supply

Supply

LOAD

ISlide60

DM Conducted EMI Mitigation

EMI filter designAdd filter to prevent noise conducted to Supply or Load

May affect SMPS stability

Application Note “Simple Success With Conducted EMI From DC-DC Converters”

60

Switch Mode Power Supply

Supply

LOAD

(

Buck)

60Slide61

EMI LC Filter Design

METHOD 1Measure input voltage ripple

METHOD 2

Approximate

I

IN as a square wave

Find first harmonic amplitude, I, using Fourier

61

Estimate required attenuation

D = duty cycle, V

MAX = required voltage level in dBSlide62

EMI LC Filter Design

Select L

f

Usually in 1uH to 10uH range

Select highest

L

f for input current ratingSelect C

fSelect highest value of C

fa and Cfb

Add

CdReduces output impedance to minimize affect on control loop

62

C

fa

ensures

f

r

of filter is 1 decade below

f

s

C

fb

ensures filter meets attenuation requirementsSlide63

Example, LMZ23605 EVM

63

Initial EMI measurement

Estimated noise level: 80dB

m

V

Required noise level: <40dB

m

VRequired attenuation: 40dBmV

>

80dBμVSlide64

Example, LMZ23605 EVM

Filter Design

C

IN

= 20

μ

Ff

s = 800kHz|Att|dB = 40dBSelect

Lf = 1.0μH

Calculate Cfa and

CfbSelect highest value

Calculate

C

d

64Slide65

Example, LMZ23605 EVM

65

LC Filter Gain

Final EMI measurement

Required Attention

40dB

Selected

L

f

1

μ

F

Calculated

C

fa

4.9

μ

F

Calculated

C

fb

3.9

μ

F

Selected

C

f

4.7

μ

F

C

d

150

μ

F

Frequency - kHz

Gain - dBSlide66

Conducted EMI Before and After Filter

24V input, 12V output, 3A, 320kHz

24V input, 12V output, 3A, 320kHz, w/ filter: 3.3uH, 20uF

66

> 80dB

μ

V

52dB

μ

V

f

sw

= 320kHz

filter

66

0

-20

-40

-60

-80

-100Slide67

67

AGENDA

Snubbers

and Components

EMI Overview – definition and standards

Noise Sources Identification

Minimize

EMI

Generation

by

Layout

Protect

Sensitive Circuits

from

Noise

Conducted EMI and EMI Filters

Summary

Slide68

68

Lower EMI can be achieved by…

Use

snubbers

and

clamps

to minimize both dv/dt and di/dt of switching waveforms

Typical snubbers in switching power suppliesSlide69

Designing RC Snubbers

RC to damp out ringingDetermine

C

SNUB

Measure

f

ring at the switch nodeSelect C that halves

fringCalculate parasitic capacitance,

CP, and leakage inductance, L

lkg

5ns/div

f

ring

= 200MHz

C

SNUB

= 330pFSlide70

C

P

110pF,

L

lkg = 5.4nH

Determine RSNUB

for critical dampingR = characteristic impedance of

LC

Determine

Power Dissipation

Designing RC Snubbers

C

SNUB

R

SNUB

C

SNUB

R

SNUB

R

SNUB

=7.3

Ω

V

PK

= 8V

Valid for

t

rise

<< R

SNUB

C

SNUB

<<

t

ONSlide71

Guidelines to designing RCD Snubber

Rise time controlSelect C, based on:

max current, voltage capacitor charges to and desired rise time.

Select R with time constant much smaller than switching period

Estimate power dissipationSlide72

Guidelines to designing RCD Snubber

Clamp modeSelect C

Select R

Calculate power dissipation

L

=

L

lkg

(flyback) or

L

mag

(forward)

ΔV

= voltage change on

C

SNUB

V

= Initial voltage

i.e

voltage

R

SNUB

is connected to

I

PRIM

= current in

L

at turn offSlide73

Well-Chosen Components/Packages

Reduce Amplitude of Ringing Waveforms

73

Resistors/Capacitors

Inductors/Transformers

Power MOSFETs

Rectifier Diodes

Concerns with components dealing with high

di

/

dt

and

dv

/

dt

stresses

Cin

,

Cout

, FET decoupling,

snubbers

, sense resistors

Biggest concern is stray inductance

Surface mount parts have less inductance than through-hole

Use

Low inductance resistors for current sense applications to preserve waveform shape

Avoid Using Wirewound ResistorsSlide74

Well-Chosen Components/Packages

Reduce Amplitude of Ringing Waveforms

74

Resistors/Capacitors

Inductors/Transformers

Power MOSFETs

Rectifier Diodes

Use shielded inductors for all power inductor paths

If cannot find shielded coupled inductor, specify two shielded inductors

Transformers major problem in EMI

Flyback voltages can be very high

Reflected voltages must be snubbed

Different cores have different leakage flux

Work with a reputable transformer manufacturer such as Pulse or

Coilcraft

to ensure quiet transformer design Slide75

Well-Chosen Components/Packages

Reduce Amplitude of Ringing Waveforms

75

Resistors/Capacitors

Inductors/Transformers

Power MOSFETs

Rectifier Diodes

Come in many packages (TO-220, SO-8, DPAK, etc)

Surface mount devices have EMI advantages

Lower lead inductance

Use copper traces to cool part and

reduce EMI

Through-hole cooled via insulator

which creates parasitic capacitance

and radiates during switching cycles

Method to reduce this noise shown

using faraday shield

Drain-

heatsink

(chassis) capacitance of thru-hole components and its neutralization with a Faraday screen.Slide76

Well-Chosen Components/Packages

Reduce Amplitude of Ringing Waveforms

76

Resistors/Capacitors

Inductors/Transformers

Power MOSFETs

Rectifier Diodes

Used as freewheeling diodes in asynchronous bucks, secondary side rectifiers for transformer-based topologies, voltage doublers, valley fill circuits, etc.

Same package concerns as FETs

Budget space for RC snubber across diodes

Several different types

General purpose – High reverse voltage but too slow for SMPS

Schottky – Low

Vf

, very fast but limited to <100V apps

Ultra and super fast – High

Vr

, fast recovery, low leakage, but high

VfSlide77

Reverse recovery effects EMI

77

Resistors/Capacitors

Inductors/Transformers

Power MOSFETs

Rectifier Diodes

Main trade-off

Faster recovery = higher efficiency but higher EMI

Use Schottky diodes for best performance (low capacitive types like MBR series even better)Slide78

78

AGENDA

Summary

EMI Overview – definition and standards

Noise Sources Identification

Minimize

EMI

Generation

by

Layout

Protect

Sensitive Circuits

from

Noise

Conducted EMI and EMI Filters

Summary

Slide79

SUMMARY

EMI is Electromagnetic Interference. There are many EMC standards, based on regions and applicationsSMPSs are big source of radiated and conducted EMI

EMI comes from high power switching action

EMI problems can be mitigated by identifying high di/dt loop and reducing loop area by careful board layout

Sensitive circuits should be protected with careful layout and shielding

Filters can be designed to attenuate conducted EMI to protect supply / Load

Filters also help reduce radiated EMI79