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Optoelectronic Integration Optoelectronic Integration

Optoelectronic Integration - PowerPoint Presentation

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Optoelectronic Integration - PPT Presentation

Bergur Gudbergsson Zach Whitney Marcus Hale As the data transfer limits of conventional electric interconnects are approached emerging onchip optoelectric solutions look promising as means of keeping up with increased processing power efficiency and bandwidth requirements This prese ID: 355273

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Slide1

Optoelectronic Integration

Bergur GudbergssonZach WhitneyMarcus Hale

As the data transfer limits of conventional electric interconnects are approached, emerging on-chip optoelectric solutions look promising as means of keeping up with increased processing power, efficiency, and bandwidth requirements. This presentation will explore fiber optics, vertical-cavity surface emitting lasers (VCSEL), optical interconnects, and photodiodes.

05/05/14

1Slide2

Outline

Fiber OpticsBasics of FiberFiber typesOptical PowerTransmission BandsWave Division Mux

PIN PhotodiodeAbsorptionEnergy Band DiagramsApplicationsVCSELBasic OperationStructure

VCSEL-PIN TRx function & fabricationOptical InterconnectsBasic operation

2Slide3

The Basics of Fiber

3A fiber cable consists of:CoreCladding

BufferJacket“Total Internal Reflection”Slide4

4

4

Cladding

has lower refractive index than the

core which

causes

total internal reflection

within the coreSlide5

Fiber Types

5Two main types of fiber optics cablesSingle Mode Fiber (SMF) (9μM)

Multi Mode Fiber (MMF) (62.5μM or 50μM)Slide6

Single Mode Fiber

6Small core carries single mode of lightNo modal dispersion

Long-haul data transmissionRequires expensive coherent laser light sourceRequires specific connector alignmentOperates in 1.3μM -1.5μM RegionSlide7

Multi Mode Fiber

7Multiple modes of light can propagateModal dispersion limits distance (500 meters)Uses cheaper light sources

LEDVCSELLarger alignment tolerancesTypically operates at 0.85μMSlide8

Optical Power

8Light follows “inverse square law”inversely proportional to distance squaredAttenuation = loss of intensity

Measured in Decibel-milliWatts (dBm /dBmW)0dBm is 1 mW3dBm is 2

mW-50dBm is 10 nWSlide9

Transmission Bands

9Split into four windows850nMHigh attenuation

1310nMZero modal dispersion for SMFUp to 10kM reach1550nM (Conventional-band)Amplified via erbium doped fibers1570-1610nm (Long-band)Slide10

10Slide11

Typical Mux/

Demux System

Multiple signals are generatedMultiplexer combines the lights into a signal carrier signalSignal is transmittedλν=

cSignal is re-separatedSignal is received

11Slide12

PIN Photodiodes

Photodiodes with an Intrinsic (undoped) region between highly doped P and N junctions.

Anti-reflection (1/4 wavelength)

12Slide13

Absorption

Photons Absorbed in the intrinsic regionCreates CarriersIncreases Photocurrent (Light into Current)Si: infrared(700nm) up to 1μmInGaAS: up to 1.7μm (Longer wavelengths)

13Slide14

Electron-Hole Pair Generation

14Slide15

Energy band Diagram

InGaAs

15Slide16

Energy band

Diagram PIN-Si

16Slide17

Applications

Optical fiber communicationsSecurity SystemsCamerasLight Controls

http://www.hamamatsu.com/cs/Satellite?blobcol=urldata&blobheadername1=content-disposition&blobheadervalue1=inline%3Bfilename%3D149%2F656%2Fk_s1226-44bq_bk_-5bq_bk_pp_xx.jpg&blobkey=

id&blobtable=MungoBlobs&blobwhere=1328686465431&ssbinary=true

17Slide18

Fiber Optic Link

18Slide19

Camera Brightness Metering

19Slide20

Smoke Detector

20Slide21

Introduction to VCSELs

Vertical Cavity Surface Emitting LasersDifferent from typical Laser DiodesLaser is perpendicular to the surface.P and N doped regions act as parallel DBR mirrors, also forming a diode junction.Multiple quantum wellsAble to arrange in dense 1 or 2D, on-chip arrays.

21Slide22

History of VCSELs

1979 first device using GaInAsP/InP1988 first continuous wave using GaAs

Today, GaAs-AlGaAs material is favored, 850nm wavelength used for short-haul data communication (monolithic TRx)

22Slide23

VCSELs Basic Structure

Typical Laser Diode

VCSEL

23Slide24

VCSEL Array

24Slide25

VCSEL technology

25Slide26

VCSEL technology

26Slide27

VCSEL-PIN TRx

Monolithic transceiver chips coupled with MMFMiniaturization only possible with PIN PDWhy?Data Rates in the 10-Gb/s rangeArrays allow Optical Interconnects even higher rates

27Slide28

VCSEL-PIN TRx

Fabrication

Two stacks of MBE layersPIN PD grown in the same run of the VCSEL layers.Order is important28Slide29

VCSEL-PIN TRx

29Slide30

VCSEL-PIN TRx

30Slide31

VCSELs

PROSEasy testing throughout fabricationHigh reflectivity mirrors

Reduced threshold current (down to the 10’s of uA)Low power consumptionCONS

Poor thermal characteristics at high-power (980nm+)Increased heat increases threshold current

Reduced output at high-power

Reduced output at longer wavelengths

31Slide32

Correcting Thermal Issues in VCSELs

Experiments with various passivation layersSiO2 (dated)High resistivity and insulationPoor heat conductivity (1W/mK)

AlN (new fabrication)High resistivityHigh heat conductivity (300W/mK)Increased temp distribution, reduces thermal resistanceCarbon Nanotubes (future?)

32Slide33

Correcting Thermal Issues in VCSELs

33Slide34

Correcting Thermal Issues in VCSELs

34Slide35

Final Thoughts on VCSELs

VCSLEs experiencing huge growth as electrical interconnects slowly become obsoleteVCSELs are attractive for short-haul, large data transfersCan densely back in 1D & 2D array allowing for increased output as well as easy packagingGreat, and basically only choice for optical interconnects

35Slide36

Brief Overview of Optical Interconnects

36Slide37

Brief Overview of Optical Interconnects

AdvantagesKeep up with Moore’s LawHigher carrier frequencyLess crosstalkLower power consumptionData ranges in the range of Tb/s

http://www.youtube.com/watch?v=0U4Af2qmgFA (similar but using silicon based lasers)37Slide38

Conclusion

All of these optoelectrical innovations contribute to the growing field of optical interconnection technologyImmensely complex, research still underwayHuge growth potential

38Slide39

References

Arshad, T. S., Othman, M. A., & Yasin, N. Y. Comparison on IV Characteristics Analysis between Silicon and InGaAs PIN Photodiode.

IEEE (ICICI-BME), 71-75. Retrieved May 1, 2014, from http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6698467Introduction to DWDM For Metropolitan Networks. (2000). San Jose, CA: Cisco Systems, Inc.

Kenichi, I. VCSEL -Its Conception, Development, and Future-. IEEE (MOC' 13), 1-2. Retrieved May 1, 2014, from http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6715057

Kern, A., Al-

Samaneh

, A., Wahl, D., &

Michalzik

, R. Monolithic VCSEL–PIN Photodiode Integration for Bidirectional Optical Data Transmission. 

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

19

, 1-13

.

Lifeng, H., Yongfeng

, M., & Yuan, F. Fabrication and Testing of 980nm High-Power VCSEL with AlN Film Passivation Layer. IEEE (ICOM)

, 45-48. Retrieved May 1, 2014, from

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6316212

39Slide40

References

Mishra, S., Chaudhary, N., & Singh, K. Overview of Optical Interconnect Technology. International Journal of Scientific & Engineering Research, 3, 1-7. Retrieved May 1, 2014, from

http://arxiv.org/abs/1303.3954Muramoto, Y., & Ishibashi, T. InP=InGaAs pin photodiode structure

maximising bandwidth and efficiency. ELECTRONICS LETTERS, 29.

Paschotta

, D. R. (

n.d.

). p–

i

–n Photodiodes. 

Encyclopedia of Laser Physics and Technology

. Retrieved May 1, 2014, from http://www.rp-photonics.com/p_i_n_photodiodes.html

Paschotta

, R. (

n.d.). Passive Fiber Optics. Tutorial “”: multimode fibers, number of modes, core diameter, numerical aperture, graded-index fiber. Retrieved May 1, 2014, from http://www.rp-photonics.com/passive_fiber_optics4.html

Single mode optical fiber. (2014, April 22). Wikipedia

. Retrieved May 2, 2014, from https://en.wikipedia.org/wiki/Single_mode_optical_fiber

40Slide41

References

Steenbergen, R. (Director) (2013, February 4). Everything You Always Wanted to Know About Optical Networking - But Were Afraid to Ask. NANOG57. Lecture conducted from GTT, Orlando, Florida

.Technologies. (n.d.). . . Retrieved May 1, 2014, from http://www.pacer.co.uk/Assets/Pacer/User/Photodiode%20Typical%20Applications.pdfTotal internal reflection. (2014, April 28). Wikipedia. Retrieved May 2, 2014, from https://en.wikipedia.org/wiki/Total_internal_reflection

Zeghbroeck., B. V. (2011, January 1). Chapter 4: p-n Junctions. Optoelectronic devices. Retrieved May 1, 2014, from http://ecee.colorado.edu/~bart/book/book/chapter4/ch4_6.htm

http://en.wikipedia.org/wiki/Vertical-cavity_surface-emitting_laser

 

http://en.wikipedia.org/wiki/Laser_diode

41Slide42

Key Points

Single Mode fibers are used in long data transmission. Multimode Fibers are cheaper and are used for short distancesLight signal intensity is measured in dBmWPIN PDs create one electron-hole pair per entering photon.VCSELs allow for minimal power use and densely packed on chip integration

Monolithic VCSEL-PIN based transceivers allow for short-haul data transfer in the 10Gb/s range.42