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Vacancy defect detection and characterization in SrTiO Vacancy defect detection and characterization in SrTiO

Vacancy defect detection and characterization in SrTiO - PowerPoint Presentation

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Vacancy defect detection and characterization in SrTiO - PPT Presentation

3 thin films by positron lifetime spectroscopy David J Keeble Carnegie Laboratory of Physics University of Dundee Dundee DD14HN Scotland UK Sebastian Wicklein and Regina Dittmann ID: 462890

films srtio3 trapping thin srtio3 films thin trapping positron lifetime defect doped annihilation bulk phys pld vacancy poor spectroscopy

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Slide1

Vacancy defect detection and characterization in SrTiO3 thin films by positron lifetime spectroscopy

David J.

Keeble

Carnegie Laboratory of Physics, University of Dundee

Dundee, DD14HN, Scotland, UK

Sebastian

Wicklein

and Regina

Dittmann

Peter

Grünberg

Institute,

Forschungszentrum

Jülich

,

52425

Jülich

, Germany

Bharat

Jalan

and Susanne Stemmer

Materials Department, University of California, Santa Barbara,

California 93106-5050, USASlide2

L. Jin and C. L. Jia, Peter Grünberg Institute, Research

Centre Jülich TEM

Acknowledgements

European

Commission

Programme

RII3-CT-2003-505925

FRMII-NEPOMUC

beamline

Christoph Hugenschmidt (Technische Universität München, ZWEFRM 11)

FRMII-NEPOMUC VE-PALS instrument station

Werner Egger (Universität Bundeswehr München)

University of Dundee

Ross Mackie,

Gurmeet

KandaSlide3

Non-stoichiometry in thin film SrTiO3

A-site

B-site

Cation

Vacancies?

V

Sr

inferred from

inhomogenous

TEM contrast modulations

Ohnishi, et al.

J. Appl. Phys.

103

, 103703, (2008).

Ti – rich

Amorphous TiO

2

Sr

– rich

Ruddlesden

-Popper

SrO

layer phases

Extreme

c

ation

n

on-stoichiometry

V

Sr

inferred from

modelling

O-

K

edge ELNES

spectra

Mizoguchi

,

et al.

Appl. Phys.

Lett

.

87, 241920 (2005

)

Tokuda

,

et al.

Appl. Phys.

Lett

. 99, 033110 (2011).Slide4

Positrons trap at missing atom defects, open volume defects: antimatter traps at sites of missing matterPositron annihilation spectroscopy (PAS) methods have ppm-level sensitivity PAS methods, combined with DFT, can

detect and identify vacancy defectsThree PAS methods: here we report positron

lifetime

spectroscopy measurementsSlide5

Positron LifetimesPositron lifetime sensitive

to electron density

V

+

positive

Negligible

e

+

trapping

V

0

neutral

Good

e

+

trapping

V

negative

Rydberg

states

Excellent

e

+

trapping

B-site

4−

V

O

: 2+

A-site

2−

E

+

E

BSlide6

Defect Free Bulk Lattice

B

e

+

Positron source

Annihilation

Thermalization

Annihilation Radiation

B

Defect

Trapping

k

D

D

Positron Annihilation Lifetime Spectroscopy

E

+

E

B

Lifetime 1

Value less than bulk lifetime:

reduced

bulk lifetime

Lifetime 2

‘fixed’ at the defect value

Standard Trapping Model (STM)

The bulk positron lifetime is a characteristic of a given material

511

keV

511

keVSlide7

Defect specific trapping

coefficient

Defect concentration [D

]

Reduced bulk

Vacancy 1

Vacancy 2

Annihilation Radiation

Defect Free Bulk Lattice

Defect 1

B

D1

k

D1

e

+

Positron source

Trapping

Annihilation

Defect 2

k

D2

D2

Thermalization

Two Defect

STM

Saturation trapping

occurs for

What

if

the concentration of one/both

vacancy

is ‘very’ large?

Saturation trapping

occurs:

t

1

and

I

1

tend to zero

Positron Annihilation Lifetime Spectroscopy Slide8

B-site

4−

2+

A-site

2−

DFT-MIKA

Torsti,

et

al

., Phys. Status Solidi B 243, 1016 (2006)

t

(

V

Ti

) = 195 ps

t

(

V

Sr

) = 280 ps

O

ion

relaxation

: +5.2 %

Sr

ion

relaxation

: - 8.4 %

Tanaka

et

al.

Phys. Rev.

B

68

205213

(

2003)

t

(

V

Ti

)

relax

= 189 ps

O

ion

relaxation

: +3.7 %

Ti

ion

relaxation

: - 2.1 %

t

(

V

Sr

)

relax

= 281 ps

t

(

V

O

) = 161 ps

Keeble

et

al.

Phys. Rev.

Lett

.

105

226102 (2010)

Mackie

et al

.

Phys. Rev. B

79

014102 (

2009)

e

+

enhancement

:

AP

:

Arponen

and E.

Pajanne

, Ann. Phys. (N.Y.)

121

, 343 (1979); B.

Barbiellini

, et al Phys. Rev. B

53

, 16201 (1996).

t

(

bulk

) = 152psSlide9

Variable Energy - Positron Annihilation Spectroscopy

5 × 10

8

e

+

s

-1

at 1 keV

Variable Energy – Positron Annihilation Lifetime Spectroscopy (VE-PALS)

0.511

MeV

Stop

e

+

Start

e

+

Experiment station

Acceleration 0.5 – 21

keV

> 5 x 10

6

counts / spectrum

NEPOMUC beam lineSlide10

Variable Energy - Positron Annihilation Lifetime Spectroscopy (VE-PALS)

0.511

MeV

Stop

e

+

Start

e

+

Acceleration 0.5 – 21

keV

SrTiO

3

Film

SrTiO

3

SubstrateSlide11

Un-doped Pulsed Laser Deposited (PLD) SrTiO3 on SrTiO3 Thin Films

Ti-poorSr

-poor

Strontium (

Sr

)

e

xcess

HR x-ray diffraction [002]

Sebastian Wicklein and Regina

Dittmann (Jülich) Slide12

SrTiO

3

SrTiO

3

Substrate

Un-doped

PLD

SrTiO

3 on SrTiO

3 Thin Films

DFT-MIKA

(

ps)

Bulk

152

V

O

159

V

Ti

189

V

Sr

281

deconvolved

e

+

states

deconvolved

e

+

states

Keeble

et. al.

Phys. Rev.

Lett

.

105

226102 (2010)

280

ps

183

ps

280

ps

183

ps

Sr

-poorSlide13

Un-doped PLD SrTiO3 on SrTiO3

Thin Films

F = 2.00 J cm

-

2

F = 1.50 J cm

-2

ALL

films show saturation

e

+

trapping

[V

A/B

] > 50-100 ppm Slide14

La-doped Hybrid MBE SrTiO3 on SrTiO3 Thin Films Bharat Jalan and Susanne Stemmer (UCSB)

[La]

8 x 10

17

cm

-3

[La]  3 x 10

19 cm-3Slide15

La-doped Hybrid MBE SrTiO3 on SrTiO3 Thin Films [La]

 8 x 1017 cm-3

t

VSr

= 280

ps

t

VTi

= 183 pst

Cluster  400 ps

t

1 < tBulk

 155 psSlide16

La-doped Hybrid MBE SrTiO3 on SrTiO3 Thin Films [La]

 3 x 1019 cm-3

t

VSr

= 280

ps

t

VTi

= 183 pst

Cluster  400 ps

t1 <

tBulk  155 psSlide17

Hybrid MBE SrTiO3:La - e

stimate of cation vacancy concentration Reduced bulk lifetime component,

t

<

t

B

(155

ps), due to annihilation events with perfect lattice.

t

B(STM) = 157(8) ps

E = 4.5 – 8 keV:

t

B(STM) = 154(7) ps

E = 4.5 –

7

keV

:

t

B

(STM) = 155(4)

ps

Single crystal

SrTiO

3

[

Mackie

PRB 2009 79 014102]

Assume

:

m

= 5 x 10

15

s

-1

?

No value measured in oxides, estimated values for negative vacancies in Si

2–29

× 10

15

s

̶ 1

[

V

Sr

]

5.4(6) x 10

16

cm

-3

[

V

Sr

]

1.7(5) x 10

16

cm

-3

k

[

V

Sr

] = 5.1(1.5) x 10

9

s

-1

k

[

V

Sr

] = 1.6(2) x 10

10

s

-1

[La]

3 x 10

19

cm

-3

[La]

8 x 10

17

cm

-3Slide18

Un-doped Pulsed Laser Deposited (PLD) SrTiO3 on SrTiO3 Thin Films

Strontium (Sr) excess

Ti-poor

Sr

-poor

Sebastian Wicklein and Regina

Dittmann (Jülich) Slide19

Un-doped Pulsed Laser Deposited (PLD) SrTiO3 on SrTiO3 Thin Films Sebastian Wicklein and Regina

Dittmann (Jülich)

Ti-poor

Sr

-poorSlide20

Un-doped PLD SrTiO3 on SrTiO3 Thin Films

2-term fit

2-term fit

3

-term fit

3

-term fit

1.33 Jcm

-2

1.17 Jcm

-2Slide21

Un-doped PLD SrTiO3 on SrTiO3

Thin Films

t

Cluster

420

ps

V

Pb

V

Ti

3V

O

DFT 344

psSlide22

Un-doped PLD SrTiO3 on SrTiO3

Thin Films tCluster

420

ps

V

Pb

V

Ti

3VO

DFT 344 ps

430

ps

10-14 vacancies

355

ps

5 vacancies

Hakala

,

PRB 57

, 7621 (1998

)

Staab

,

PRB

65, 115210 (2002

)

SiliconSlide23

ConclusionsSrTiO3 thin films grown by PLD with varying laser fluence (F):

Exhibit saturation trapping e+ to both V

Ti

and to

V

Sr

defects for

all films in the range 1.5 ≤ F ≤ 2.0 Jcm

-2Good agreement between MIKA calculated relaxed structure e+

lifetimes for VTi and to VSr (189 ps and 281 ps

) defects and experiment (183 ps and 280

ps)‘Stoichiometric‘ F = 1.5 Jcm-2 (Dc

= 0.0 pm) film: e+ trapping dominated by

V

Ti

, likely due to higher defect specific trapping coefficient

Sr

-poor’ (

D

c

= 0.2 pm) F = 2.0 Jcm

-2

film:

e

+

trapping dominated by

V

Sr

Sr

-poorSlide24

ConclusionsSrTiO3 thin films grown by PLD with varying laser fluence (F):

tCluster

420

ps

Ti-poorSlide25

ConclusionsHybrid-MBE SrTiO3 shows a reduced bulk lifetime – a fraction of positrons annihilate from perfect lattice.

Near-surface 50 nm contains small vacancy cluster defects. Previous measurements of laser ablated SrTiO

3

thin films have observed saturation positron trapping.

The concentrations were

estimated

to be

5.4(6) x 1016 cm

-3 for the [La]  8 x 1017

cm-3film and 1.7(5) x 1016 cm -3 for the [La]  3 x 1019

cm-3 film.

These vacancy concentrations are at least an order of magnitude lower than the La concentrations.The strontium vacancy,

VSr , is the dominant cation

vacancy

t

VSr

= 280(4)

ps