FOUP polymers are able to attract AMC Airborne Molecular Contaminants from the equipment or from the just processed wafers Later FOUP outgas these contaminants to wafers which results in an important issue to wafer environmental contamination control ID: 786612
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Slide1
Why N
2
FOUP Purge System ?
Slide2FOUP polymers are able to attract
AMC (Airborne Molecular Contaminants) from the equipment or from the just processed wafers.Later, FOUP outgas these contaminants to wafers, which results in an important issue to wafer environmental contamination control. Also, moisture and O2 content inside FOUP affects film quality and results in many process issues associated with moisture and O2
What’s the problem with FOUP ?(Possible Contamination Mechanism)
[source]
Thi
Quynh
Nguyen,et
al., “Identification and quantification of FOUP molecular contaminants inducing defects in integrated circuits manufacturing.” Microelectronic Engineering 105 (2013) 124-129.
Slide3Problems Solved with N
2
FOUP Purge
FOUP
IN
OUT
N
2
N
2
AMC (Airborne Molecular Contaminants) Decreased !!!
Moisture and O
2
content
Decreased !!!
N2 FOUP Purge System
Slide4Reduction in Cu-loss by optimizing etch condition and controlling ambient gas
[source]
T.Kamoshima,et al., “Controlling ambient gas in slot-to-slot space inside FOUP to suppress Cu-loss after damascene patterning.” IEEE Trans. Semicon. Manufact., vol.21 (Renesas & Hitachi).
Effects of N2
FOUP purge on Cu patterning
Pictures of Cu-loss by F- inside FOUP
Cu-oxidation model
F- distribution inside FOUP
Slide5Nozzle
Regardless type of tool, Design of nozzle is same
Inlet Nozzle #3
Inlet
Nozzle#1
Inlet Nozzle #2
Outlet Nozzle
Loadport
Loadport
Furnace FOUP Buffer Stage
Buffer Stage
Stage
Outlet Nozzle
FOUP
IN
OUT
Inlet Nozzle
Outlet
Pressure Switch
N2 FOUP Purge System
(Diffusion Furnace)
N2 Purge Load-Port
(Cluster Type Equipment)
ZensM
N
2
FOUP Purge System