PPT-Construction of a 1 MeV Electron Accelerator for High Preci

Author : yoshiko-marsland | Published Date : 2016-07-18

REU Student Brenden Longfellow University of North Carolina at Chapel Hill Advisor Albert Young North Carolina State University Neutron BetaDecay n p e ν

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Construction of a 1 MeV Electron Accelerator for High Preci: Transcript


REU Student Brenden Longfellow University of North Carolina at Chapel Hill Advisor Albert Young North Carolina State University Neutron BetaDecay n p e ν e pfnichollscom. Shekhar Mishra. 2. . Project-X. (Yousry Gohar. 1. , David Johnson. 2. , Todd Johnson. 2. ) . 1 Argonne National Laboratory. 2 Fermi National Accelerator Laboratory. Project-X: Nuclear Energy Application. Yue Hao, C-AD. For the eRHIC Team. eRHIC, linac-ring EIC. Linac=ERL, or the luminosity is negligible. The first proposed linac-ring collider. 250GeV (p) *15.9 (. e. ) @1.5e33 cm-2 s-1. Why linac-ring. Apart from making Higgs particles, that is? . Well, many things. Not so long ago, all televisions and computer screens used the simplest form of accelerator, a cathode ray tube. . Now, more than 30000 accelerators are used for a range of important applications. Some examples…... Marko . Fülöp. University Centre of Electron Accelerators . of Slovak Medical University, Bratislava. INTRODUCTION. Usually in practice, it appears that the more simplified equipment for only one method of use, has got the more reliable operation with lower operational cost. . Driven System Target Requirements and R&D. Stuart Henderson. Fermilab. January 13, 2012. Accelerator Driven Systems. High-power, highly reliable proton accelerator. ~1 . GeV. beam energy. ~1 MW of beam power for demonstration. Chad . Auginash. April 20, 2015. Abstract. High electron mobility transistor(HEMT) is a transistor that operates at higher frequencies, typically in the microwave range. They are used in applications that require high frequency, such as cell phones, RF applications, and some power applications. HEMTs are transistors that utilize the 2-dimensional electron gas(2DEG) created by a junction between two materials with different band gaps called a heterojunction. The two most commonly used materials to create the heterojunction are a highly doped n-type donor material, typically . Hugh Montgomery Jefferson Lab Users Meeting, June 2014 Jefferson Lab Status & Outlook Outline Outline Laboratory Highlights 12 GeV Upgrade/Commissioning Progress EIC Summary Laboratory Open House INDEX A FIL ATTACHMENTS SCS WWW.CKPL.EU CEKA AXIAL CLASSICCEKA AXIAL REVERSECEKA REVAXCEKA EXTRACORONAL CLASSICCEKA 334PRECI-VERTIXCEKA SOLCEKA MultiCEKA SITECEKA BONDPLASTICWAXEXPANDOTABLE OF ALLOYS ivTable of Contents List of TablesList of FiguresviiiChapter 1Introduction and OverviewNuclear Waste IssueAccelerator-driven transmutation of wasteMotivation to Perform this WorkProposed Work and Ta January 2019. 1. MC8; . Applications of Accelerators, Technology Transfer and Industrial Applications. Invited talks. 2. MC8 Criteria choices. Grouping subjects. Industrial . needs and Outreach program. Kurt . Aulenbacher. . (Uni. Mainz). Erdong Wang. . (BNL). 6/26/17. 1. Talks. . summary:. . Photocathode. 6/26/17. 2. 1. 6. 1. 3. 3. 6. . invitation. . talks+1. . contribution. . talks. 1. 5. 1. Sesimbra. Portugal, March 2019. Laser Beam Physics. Laura Corner. Cockcroft Institute for Accelerator Science. Liverpool University, UK. CERN Accelerator School. High Gradient Wakefield Accelerators. Mike Sullivan. EICUG 2019. July 22-26. Paris, France . 1. Outline. Introduction. Detector Issues. Machine Issues. Unique features of the EIC. Some general questions for the detector and accelerator teams. Ion Implantation. The semiconductor industry relies on the implanting of impurities in semiconductors (doping).. This is critical in integrated circuit manufacturing.. One way of doping this is to fire ions into the material from an accelerator with its penetration dependent on the energy, hence they can be placed accurately in the material..

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