PPT-indDG: A New Model for Independent Double-Gate MOSFET
Author : alida-meadow | Published Date : 2016-05-17
Santanu Mahapatra NanoScale Device Research Lab Indian Institute of Science Bangalore Email santanucedtiiscernetin Web httpwwwcedtiiscernetin nanolab Outline Common
Presentation Embed Code
Download Presentation
Download Presentation The PPT/PDF document "indDG: A New Model for Independent Doubl..." is the property of its rightful owner. Permission is granted to download and print the materials on this website for personal, non-commercial use only, and to display it on your personal computer provided you do not modify the materials and that you retain all copyright notices contained in the materials. By downloading content from our website, you accept the terms of this agreement.
indDG: A New Model for Independent Double-Gate MOSFET: Transcript
Santanu Mahapatra NanoScale Device Research Lab Indian Institute of Science Bangalore Email santanucedtiiscernetin Web httpwwwcedtiiscernetin nanolab Outline Common versus Independent double gate. for the MOSFET in saturation GS GS gs we want to find gs We have the functional dependence of the total drain current in saturation ox W2L GS Tn 1 DS GS DS Solution do a Taylor expansion around the DC operating point also called the The floating driver can drive the topside Nchannel power MOSFETs operating off a high voltage HV rail of up to 60V The internal logic prevents the inputs from turning on the power MOSFETs in a halfbridge at the same time Its unique adaptive protecti 414 – Introduction to VLSI Design. Module . #. 2 – MOSFET Operation. Agenda. MOSFET . Operation. - . Device . Physics. - MOSFET Structure. - IV Characteristics. - Scaling. - Small Geometry Effects. FLASH. Yaakov (J) Stein. Types of Memory. By memory we mean any device that stores bits of information. Volatile memory. requires voltage (. and perhaps refresh. ) to maintained information. most frequently used for RAM. Polysilicon. Aluminum. Two-Terminal MOS Structure. Tox is 2nm to 50nm. . The equilibrium concentrations of mobile carriers in a semiconductor always obey the . Mass Action Law. n = the mobile carrier concentrations of electrons . PROCESS AND DEVICE SIMULATION USING SILVACO-TCAD . TEAM MEMBERS. SOMITRA BALDUA 120108034. ANMOL RAMRAIKA 120102079. RAJESH . KUMAR 120108028. Physical limits . of silicon MOSFET transistors. . 2017-04-05. Julian Nowaczek. MOSFET Scaling:. Introduction. What do I mean by “scaling”?. Decreasing transistor size to:. Fit more devices in the same area. Tao Tang, Craig . Burkhart. Power Conversion Department, SLAC National Accelerator Laboratory. Outline. Hybrid MOSFET/Driver R&D @ SLAC. Motivation : ILC kicker. Introduction to Hybrid MOSFET/Driver. Gate Drivers Presenter: Bipolar Business Unit Date: November 2018 Version 1.1 Selection and/or Design-in Criteria How many inputs/outputs required from the Gate Driver ? Required Voltage rating Drive current rating Huch06v3fm Page 195 Friday February 13 2009 451 PMMOS TransistorAt the most basic level a MOSFET may be thought of as an onoff switch asshown in Fig 62b The gate voltage determines whether a curren Siddarth Ram mohan arun. What is . A . Mosfet. ?. M. etal . O. xide . S. emiconductor . F. ield . E. ffect . T. ransistor. Three-terminal device: Source, Drain and Gate. Transistors are used for switching and amplification in circuits. Introduction. The MOSFET (metal oxide semiconductor field effect transistor). It is another category of field effect transistor .. the MOSFET differs from the JFET (junction field effect transistor ). Conceptual Roadmap. PN junction. MOSFET. Flash Cell. Flash Blocks. Modern Devices. Put n-channels in p-substrate:. . drain (D), Source (S), Gate(G). Add a floating gate. Put a bunch together in NAND or NOR configuration. Aaron Barrera. Texas Instruments | Brushless-DC Motor Drivers. 1. How to conduct a BLDC gate driver schematic review. 2. What you’ll learn: . . How to locate EVM hardware files to use for comparison with engineer’s BLDC driver schematic.
Download Document
Here is the link to download the presentation.
"indDG: A New Model for Independent Double-Gate MOSFET"The content belongs to its owner. You may download and print it for personal use, without modification, and keep all copyright notices. By downloading, you agree to these terms.
Related Documents