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Sentaurus  Introduction & Step-by-Step Manual Chen Shi cshi3@gmu.edu Sentaurus  Introduction & Step-by-Step Manual Chen Shi cshi3@gmu.edu

Sentaurus Introduction & Step-by-Step Manual Chen Shi cshi3@gmu.edu - PowerPoint Presentation

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Sentaurus Introduction & Step-by-Step Manual Chen Shi cshi3@gmu.edu - PPT Presentation

Sentaurus Introduction amp StepbyStep Manual Chen Shi cshi3gmuedu 09162015 Tool Flow in Synopsys TCAD Design the device Simulate the device Temperature Bias Stimulus Analyse the simulation results ID: 762124

click choose step define choose click define step file region sde contact set device command create doping xxx position

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Sentaurus Introduction & Step-by-Step Manual Chen Shi cshi3@gmu.edu 09/16/2015

Tool Flow in Synopsys TCAD Design the device Simulate the device Temperature, Bias Stimulus Analyse the simulation results Bandgap IV curve Carrier distribution ……

Projects Tools Variables SPROCESS SDE SDEVICE SVISUAL

Different color indicates different status of the node

Part 1: Preparation

In VSE Lab 1506, Power-on the L inux virtual machine and log-in with your Mason Account (The virtual machine is on the desktop with icon name "VSLINUX“; Double click the icon and then press “ powe -on the machine”.) Open the terminal and type two commands: module add synopsys/ SentaurusTCAD/H-2013.03-SP2 To load the necessary modules to run the tool;swb To launch Sentaurus TCAD; Step 1. Launch Sentaurus TCAD in Linux

Step 2. Choose your project directory It is better to create a new folder (like Windows system) and put your projects in the specific folder.

Step 3. Create New Project and Add tools 2. Right click and “add tools” 1. Project > New Project 3. Choose tools

4 . Choose SDE a nd click OK 5. click OK 6 . right click SDE and add another tool 7. Similarly, add another tool: SDEVICE Note: you should make SDEVICE is after SDE here

Note: you can save your project at any time. When you create a new project and save it the first time, you will be required to name the project.

Part 2: SDE

Preparation Two methods: Draw your device(Graphic interface) Using command to describe the device(Command interface) Preparation Step 1: Draw the device(Shape & Coordinates; Material) Step 2: Doping Step 3: Contacts Step 4: Meshing Step 5: Build Mesh 1. Right click SDE and choose Edit Input > Boundary file

material Selection level Command Window Control the view angle Draw > make “ exact coordinates ” selected; Prepare a txt file to record every command when you finish each step

1. Draw a cuiboid Make sure the material is chosen as “Silicon” Draw> 3D create tools > create Cuboid (click anywhere and hold the left button, drag it to another position, then release it; Then hit the left button one more time, you will get it) Fill the coordinates of the Cuiboid to rotate the device with the mouse To reset the view angle Step 1. Draw the device

2. Draw another Cuiboid in the same way but different coordinates

Doping concentration Doping species Doping region Step 2. Doping 1. Define P-type Doping Click the “ constant profile Placement ” icon Finish the table Click “Add Placement” and close it

2. Define N-type Doping

Step 3. Contacts 1. Contact Sets: Contact Menu > Contact Sets Create “Anode” contact as the figure shows. After finishing the table, c lick “Set”. Similarly Create “Cathode” contact.

2. Set Contacts: Choose “Anode”, click Activate; Choose “Select Face” in the select level; Choose the face of the p-doped region (make sure you select the “choose button” so that you can “choose”) (if necessary, try to rotate the device) Contacts Menu > Set contacts Same way to Set the Cathode to the face of N-type region “ c hoose button”

Mesh Menu> M ultiBox Placement Finish the table Click “Add Placement” After you finish these coordinates, click “Define” Step 4. Meshing

Mesh Menu > Build Mesh Finish table(use the default one is okay) Click the “Build Mesh” Step 5. Build Mesh

Using the command interface Right click SDE and choose Edit Input > Commands

( sdegeo:create-cuboid (position 0 0 0) (position 0.5 0.5 0.5) "Silicon" "region_1") ( sdegeo:create-cuboid (position 0 0 0.5) (position 0.5 0.5 1) "Silicon" "region_2") ( sdedr:define-constant-profile "ConstantProfileDefinition_1" "BoronActiveConcentration" 1e15) (sdedr:define-constant-profile-region "ConstantProfilePlacement_1" "ConstantProfileDefinition_1" "region_1") (sdedr:define-constant-profile "ConstantProfileDefinition_2" "ArsenicActiveConcentration" 1e19) ( sdedr:define-constant-profile-region "ConstantProfilePlacement_2" "ConstantProfileDefinition_2" "region_2") (sdegeo:define-contact-set "Cathode" 4 (color:rgb 1 1 1 ) "##") (sdegeo:define-contact-set "Anode" 4 (color:rgb 1 0 0 ) "||") (sdegeo:set-current-contact-set "Cathode")(sdegeo:define-3d-contact (list (car (find-face-id (position 0.25 0.25 0)))) "Cathode") ( render:rebuild) (sdegeo:set-current-contact-set "Anode") (sdegeo:define-3d-contact (list (car (find-face-id (position 0.25 0.25 1)))) "Anode")( render:rebuild) (sdedr:define-refeval-window "RefEvalWin_1" "Cuboid" (position 0 0 0) (position 0.5 0.5 1) ) (sdedr:define-multibox-size "MultiboxDefinition_1" 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 ) (sdedr:define-multibox-placement "MultiboxPlacement_1" "MultiboxDefinition_1" "RefEvalWin_1" ) (sde:set-meshing-command "snmesh -a -c boxmethod") (sdedr:append-cmd-file "") (sde:build-mesh "snmesh " "-a -c boxmethod" " sdemodel") ( sde:build-mesh " snmesh " "-a -c boxmethod " " n@node @") Note: Replace the last line with the new command Create two cuiboid silicon region Define the doping Define the contacts Define the mesh

Part 3: SDEVICE

File { Grid = "@ tdr @" Plot = "@ tdrdat @" Current = "@plot@" Output = "n@node@" } Electrode { { name="Cathode" Voltage=0.0 } { name="Anode" Voltage=0.0 } } Physics { Mobility( DopingDep HighFieldSaturation Enormal ) EffectiveIntrinsicDensity( oldSlotboom ) } Math { Extrapolate RelErrControl Notdamped=50 Iterations=20 } Plot { eDensity hDensity eCurrent hCurrent ElectricField eEnormal hEnormal eQuasiFermi hQuasiFermi Potential Doping SpaceChargeSRH Auger AvalancheGeneration eMobility hMobility DonorConcentration AcceptorConcentration Doping eVelocity hVelocity } Solve { Quasistationary( InitialStep=1e-3 MaxStep=0.5 Goal{Name="Cathode" Voltage=2.0} ){Coupled{Poisson Electron Hole} CurrentPlot(Time=(Range=(0 1) Intervals=20)) } } FILE SECTION The input file(from SDE) Sometimes you may need parameter files. Output file XXX.tdr ------ Device figure XXX.plt ------ Plot file XXX.log, XXX.out ----log files ELECTRODE SECTION PHYSICS SECTION What models will be used MATH SECTION About calculation issue Plot Section What parameter will be showed in the XXX.tdr output file Solve Section How to simulate the device Right Click the SDEVICE tool, Edit Input > Command Paste the command files.

run button Double click the target node, you can track the running status with more details. If something is wrong in the simulation, you can try to check the XXX.out and XXX.err to debug. When you finish it, save the command file and close it. Use “ Ctrl+R ” to run the project. Or Choose the target node(I figured it out in this figure), and click “ run button ”.File content Log Files

Part 4: SVISUAL

XXX.tdr output file: Show the device figure. Choose what parameter you’d like to see(you have to define them in Physic Section in SDEVICE code as we mentioned above) Choose different region or contacts or material to show The Plot Properties Another important tool : Cut

XXX. plt output file: Show the plot curve. 1. Choose the data set 2. Choose X-Axis(usually chose time as X-Axis) 3. Choose Y-Axis(Here we choose Cathode T otalCurrent as the Y value) Notes: You can only choose one X-Axis value . But you can choose many Y-Axis manual. This way you just get many curves.