600 K 1150 K 3 3 3 Given a uniformly ntype ionimplanted layer with thickness t 1 um and doping concentration cmWhat is the sheet resistance What is the resistance of the layout shown be ID: 236637
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Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.012 Microelectronic Devices and Circuits Spring 2007 February 14, 2007 - Homework #1 Due - February 21, 2007 600 K 1150 K -3 -3 -3 Given a uniformly n-type ion-implanted layer with thickness t = 1 um and doping concentration cmWhat is the sheet resistance? What is the resistance of the layout shown below? Assume that the contacts each By adding additional dopants, we make a new n-type ion-implanted resistor with m m. Find the new sheet resistance. -19:I Note t = 10-4 cm. Resistance = parallel; one on top and one on bottom. -19 -19 17 Total sheet resistance = (bot/ Assume thermal equilibrium. Plot the potential ity? Hole diffusion current density? Assume ities do not sum to zero; however, the is an open circuit. Explain what is (x) = 60 mV * log ((x)/10 Silicon Slab