PPT-Review for Final Exam MOSFET and BJT

Basis of amplifiers Obtaining linear amplification Smallsignal voltage Gain Equivalentcircuit models π model and T model Basic configurations and Biasing Analyze discretecircuit amplifiers. The high analog input frequency makes this an inadequate solution The ON resistance of the switch varies with the input level resulting in variation in magnitude and variation in magnitude and phase hence distortion Limited slew rate on the switch The floating driver can drive the topside Nchannel power MOSFETs operating off a high voltage HV rail of up to 60V The internal logic prevents the inputs from turning on the power MOSFETs in a halfbridge at the same time Its unique adaptive protecti Power products . rel. data & pricing forecasts for 650V-15kV SiC power modules, MOSFETs & diodes – John Palmour. Cree Power – Sept 2014 . HMW Direct-Drive Motor Workshop. Jeff Casady, +001.919.308.2280 or jeffrey_casady@cree.com . . Instructor: Eng. Jalal Al Roumy. The Islamic University of Gaza. Faculty of Engineering. Electrical Engineering Department. بسم الله الرحمن الرحيم. PROCESS AND DEVICE SIMULATION USING SILVACO-TCAD . TEAM MEMBERS. SOMITRA BALDUA 120108034. ANMOL RAMRAIKA 120102079. RAJESH . KUMAR 120108028. I. Author:. Ales Havel. E-mail:. . ales.havel@vsb.cz. Phone number:. 4287. Headquarters:. E227. Web page:. http://homen.vsb.cz/~. hav278. /. Presentation contents. Power semiconductor devices. Power diode. Note: Students should turn off “Stat Plot”. Final Exam Review Day #. 1. Warm-up. Factor. 1.) . . 2.) . 3.) . . 4.) .  . Page 1. 1. A . 2. .. D . 3. .. A . 4. .. A . 5. .. A . 6. .. E. Basis of amplifiers. Obtaining linear amplification. Small-signal voltage Gain. Equivalent-circuit models: . π. model and T model. Basic configurations and Biasing. Analyze discrete-circuit amplifiers. Tao Tang, Craig . Burkhart. Power Conversion Department, SLAC National Accelerator Laboratory. Outline. Hybrid MOSFET/Driver R&D @ SLAC. Motivation : ILC kicker. Introduction to Hybrid MOSFET/Driver. 10/10/2014. 1. Topic details. Power BJT. Switching Characteristics, Switching limits, base-drive control. 2. Power . Mosfets. Switching Characteristics ,gate drive. IGBT. di/. dt. Huch06v3fm Page 195 Friday February 13 2009 451 PMMOS TransistorAt the most basic level a MOSFET may be thought of as an onoff switch asshown in Fig 62b The gate voltage determines whether a curren Part 1. 2. Review of MOSFETs and BJTs. For amplification:. MOSFET in Saturation (NMOS). BJT in Active mode (NPN). 3. Current-Voltage Characteristics. BJT in Active. MOSFET in SAT. Low-Frequency Small-Signal . Introduction. The MOSFET (metal oxide semiconductor field effect transistor). It is another category of field effect transistor .. the MOSFET differs from the JFET (junction field effect transistor ). Conceptual Roadmap. PN junction. MOSFET. Flash Cell. Flash Blocks. Modern Devices. Put n-channels in p-substrate:. . drain (D), Source (S), Gate(G). Add a floating gate. Put a bunch together in NAND or NOR configuration.