PPT-EE130/230A Discussion

15 Peng Zheng 1 Early Voltage V A Output resistance A large V A ie a large r o is desirable I B 3 I C V EC 0 I B 2 I B 1 V A PunchThrough EB and EB depletion regions in the base touch . 1. x. kcd.com. EECS 370 Discussion. Topics Today:. Function Calls. Caller / . Callee. Saved . Registers. Call Stack. Memory Layout. Stack, Heap, Static, Text. Object Files. Symbol and Relocation Tables. Peng. . Zheng. Electron and Hole Concentrations. Silicon doped with 10. 16. cm. -3. phosphorus atoms, at room temperature (. T. = 300 K).. n. = . N. D . = 10. 16. cm. -3. , . p. = 10. 20. /10. Electromechanics. 2013. J. Arthur Wagner, Ph.D.. Prof. Emeritus in EE. wagneretal@sbcglobal.net. Fig. 4.11 Converter for DC motor (brush-type) drive. A fictitious node is added to create two voltages van and . Peng. . Zheng. 1. Sample MOSFET I-V . problem-Quiz 5 SP2013. 2. Sample MOSFET I-V . problem-Quiz 5 SP2013. 3. Problem with “Square Law Theory”. Ignores variation in depletion width with distance . 1 Spring 2003 Prof. King will not hold office hours this week, but will hold an extra office hour next Mo (2/3) from 11AM-12:30PM Peng. . Zheng. Interface Trap Charge, . Q. IT. Traps cause “. sloppy. ” . C. -. V. and also greatly degrade mobility in channel. “Donor-like” traps are. charge-neutral when. filled, positively charged. Glenn Parsons. 802.1 chair. Introductory remarks. Background: potential issue regarding the . P802c . draft PAR scope restricting MAC address privacy approaches.. Purpose: facilitate technical . discussion across 802 WGs, . 6. Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . Peng. . Zheng. 1. Why New Transistor Structures?. Off-state leakage (I. OFF. ) must be suppressed as . L. g. . is scaled down. allows for reductions in V. T. and hence V. DD. . Leakage occurs in the region away from the channel surface. . Zheng. Illumination of a . Semiconductor . with . Light. EE130/230A Fall 2013. (Refer to Discussion 3.). Schottky. . Contact Energy Band Diagrams. :. EE130/230A . Fall 2013. Ideal M-S Contact: . F. Peng. . Zheng. 1. “Game Plan” for . I-V. Derivation. Solve the minority-carrier diffusion equation in each quasi-neutral region to obtain excess minority-carrier profiles. different set of boundary conditions for each region. ECEN 301 Discussion # 23 – Sequential Logic 1 Date Day Class No. Title Chapters HW Due date Lab Due date Exam 19 Nov Wed 23 Sequential Logic 14.1     20 Nov Thu             21 Nov Fri   Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . . Zheng. Electron and Hole Concentrations. Silicon doped with 10. 16. cm. -3. phosphorus atoms, at room temperature (. T. = 300 K).. n. = . N. D . = 10. 16. cm. -3. , . p. = 10. 20. /10. 16 .