Jelena Ninkovic MaxPlanckInstitute for Physics Munich Germany SiMPs basics Why do we need 3D interconnections Concept of SiPMs with Bulk Integrated Quench Resistors SiPMl concept ID: 760379
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Slide1
SiPM Interconnections to 3D electronics
Jelena NinkovicMax-Planck-Institute for Physics, Munich, Germany
SiMPs
basics
Why do we need 3D interconnections
Concept of
SiPMs
with Bulk Integrated Quench Resistors –
SiPMl
concept
What we want to do
Slide2Jelena Ninkovic
2
What is a Silicon Photomultiplier - SiPM
An array of avalanche photodiodes operated in Geiger mode binary device passive quenching by integrated resistor read out in parallel signal is sum of all fired cells
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Slide3MEPhI/Pulsar (Moscow) - DolgosheinCPTA (Moscow) - GolovinZecotek(Singapore) - SadygovAmplification Technologies (Orlando, USA)Hamamatsu Photonics (Hamamatsu, Japan)SensL(Cork, Ireland)AdvanSiD (former FBK-irst Trento, Italy)STMicroelectronics (Italy)KETEK (Munich)RMD (Boston, USA) ExcelitasTechnologies (former PerkinElmer)MPI Semiconductor Laboratory (Munich)Novel Device Laboratory (Beijing, China)Philips (Netherlands)Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM………
What is available?
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
3
Slide4Why do we need 3D integration?
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
4
Slide5Components of a SiPM cell
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
5
Slide6SiPM cell components SiMPl approach
n
+
p+
AD
R
Q
C
D
C
C
V
bias
Jelena Ninkovic
6
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Concept developed
at
Max-Planck-Society Semiconductor Laboratory
Slide7SiPM cell components SiMPl approach
n
+
p+
n
high field
AD
R
Q
C
D
C
C
V
bias
Jelena Ninkovic
7
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Slide8SiPM cell components SiMPl approach
n
+
p+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
high field
AD
R
Q
C
D
C
C
V
bias
Jelena Ninkovic
8
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Slide9SiPM cell components SiMPl approach
n
+
p+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
high field
AD
R
Q
C
D
C
C
V
bias
Sensor wafer
Handle wafer
SOI wafers
Jelena Ninkovic
9
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Slide10Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
10
Advantages and Disadvantages
Advantages:
no need of
polysilicon
free entrance window for light, no metal necessary within the array
coarse lithographic level
simple technology
inherent diffusion barrier against minorities in the bulk -> less optical cross talk
Drawbacks
:
required depth for vertical resistors does not match wafer thickness
wafer bonding is necessary for big pixel sizes
significant changes of
cell
size requires change of
the material
vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times
Slide11Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
11
Prototype production
High homogeneity over big distances!
6 100 cells arrays placed over6mm distance
High homogeneity
within the array!
6mm
6mm
30x30
array
sensitive area free
High linearity!
Slide12D
V=2V
D
V=1V
Hamamatsu MPPCSiMPL
DV=2V
DV=1V
Fill factor & Cross Talk & Photon Detection Efficiency
Pitch / Gap Fill factorCross talkmeas.(DV=2V)130mm / 10mm85.2%29%130mm / 11mm83.8%27%130mm / 12mm82.4%25%130mm / 20mm71.6%15%
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
12
Fill factor limited only by the cross talk suppression need!
No special cross talk suppression technology applied
just intrinsic property of
SiMPl
devices
Slide13@223K
Detection of particles
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
13
Excellent time stamping due to the fast avalanche process (<1ns)
MIP gives about 80pairs/
m
m
huge signal in
SiPM
allows operation at small DV
Reduction of dark rate and cross talk by at least an order of magnitude
<10
% GE
still
gives
high
MIP detection
efficiency
Slide14n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
14
Slide15n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
15
Slide16n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
16
Logic, TDC
, Photon
counter
Cell
electronics
Cell
electronics
Topologically flat surface
High fill factor
Adjustable resistor
value
Low RC -> very
fast
Active recharge
Ability to turn off noisy
pixels
Pitch limited by the bump bonding
Cell electronics: Active quenching,
Bias control,
Cell activity,
Digital output
Slide17n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
17
Topologically flat and free surface
High fill factor
Sensitive to light
Slide18n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
18
Topologically flat and free surface
High fill factor
Sensitive to light
Slide19n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
19
Logic, TDC
, Photon
counter
Cell
electronics
Cell
electronics
Topologically flat and free surface
High fill factor
Sensitive to light
Slide20n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
20
TDC, Photon counter, active recharge
Cell
electronics
Cell
electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensor
wafer
handle wafer
on sensor wafer
2. bond sensor wafer
to handle wafer
3. thin sensor side
to desired thickness
4. process
SiMPl
arrays
on top side
sensor
wafer
handle wafer
1.
Structured implant on
backside
5. Etching backside
& flip chipping on back side
Slide21n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
21
TDC, Photon counter, active recharge
Cell
electronics
Cell
electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensor
wafer
handle wafer
on sensor wafer
2. bond sensor wafer
to handle wafer
3. thin sensor side
to desired thickness
4. process
SiMPl
arrays
on top side
sensor
wafer
handle wafer
1.
Structured implant on
backside
5. Etching backside
& flip chipping on back side
Slide22n
+
n
-
non-depleted
region
n
-
non-depleted
region
n
-
depleted gap
region
n
Next generation
SiMPl
devices
Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
22
TDC, Photon counter, active recharge
Cell
electronics
Cell
electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensor
wafer
handle wafer
on sensor wafer
2. bond sensor wafer
to handle wafer
3. thin sensor side
to desired thickness
4. process
SiMPl
arrays
on top side
sensor
wafer
handle wafer
1.
Structured implant on
backside
5. Etching backside
& flip chipping on back side
Slide23Jelena Ninkovic
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
23
Thanks for the attention!!