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SiPM  Interconnections to 3D electronics
SiPM  Interconnections to 3D electronics

SiPM Interconnections to 3D electronics - Description


Jelena Ninkovic MaxPlanckInstitute for Physics Munich Germany SiMPs basics Why do we need 3D interconnections Concept of SiPMs with Bulk Integrated Quench Resistors SiPMl concept ID: 760379 Download Presentation

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Slide1

SiPM Interconnections to 3D electronics

Jelena NinkovicMax-Planck-Institute for Physics, Munich, Germany

SiMPs

basics

Why do we need 3D interconnections

Concept of

SiPMs

with Bulk Integrated Quench Resistors –

SiPMl

concept

What we want to do

Slide2

Jelena Ninkovic

2

What is a Silicon Photomultiplier - SiPM

An array of avalanche photodiodes operated in Geiger mode  binary device passive quenching by integrated resistor read out in parallel  signal is sum of all fired cells

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Slide3

MEPhI/Pulsar (Moscow) - DolgosheinCPTA (Moscow) - GolovinZecotek(Singapore) - SadygovAmplification Technologies (Orlando, USA)Hamamatsu Photonics (Hamamatsu, Japan)SensL(Cork, Ireland)AdvanSiD (former FBK-irst Trento, Italy)STMicroelectronics (Italy)KETEK (Munich)RMD (Boston, USA) ExcelitasTechnologies (former PerkinElmer)MPI Semiconductor Laboratory (Munich)Novel Device Laboratory (Beijing, China)Philips (Netherlands)Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM………

What is available?

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

3

Slide4

Why do we need 3D integration?

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

4

Slide5

Components of a SiPM cell

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

5

Slide6

SiPM cell components  SiMPl approach

n

+

p+

AD

R

Q

C

D

C

C

V

bias

Jelena Ninkovic

6

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Concept developed

at

Max-Planck-Society Semiconductor Laboratory

Slide7

SiPM cell components  SiMPl approach

n

+

p+

n

high field

AD

R

Q

C

D

C

C

V

bias

Jelena Ninkovic

7

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Slide8

SiPM cell components  SiMPl approach

n

+

p+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

high field

AD

R

Q

C

D

C

C

V

bias

Jelena Ninkovic

8

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Slide9

SiPM cell components  SiMPl approach

n

+

p+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

high field

AD

R

Q

C

D

C

C

V

bias

Sensor wafer

Handle wafer

SOI wafers

Jelena Ninkovic

9

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Slide10

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

10

Advantages and Disadvantages

Advantages:

no need of

polysilicon

free entrance window for light, no metal necessary within the array

coarse lithographic level

simple technology

inherent diffusion barrier against minorities in the bulk -> less optical cross talk

Drawbacks

:

required depth for vertical resistors does not match wafer thickness

wafer bonding is necessary for big pixel sizes

significant changes of

cell

size requires change of

the material

vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times

Slide11

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

11

Prototype production

High homogeneity over big distances!

6 100 cells arrays placed over6mm distance

High homogeneity

within the array!

6mm

6mm

30x30

array

sensitive area free

High linearity!

Slide12

D

V=2V

D

V=1V

Hamamatsu MPPCSiMPL

DV=2V

DV=1V

Fill factor & Cross Talk & Photon Detection Efficiency

Pitch / Gap Fill factorCross talkmeas.(DV=2V)130mm / 10mm85.2%29%130mm / 11mm83.8%27%130mm / 12mm82.4%25%130mm / 20mm71.6%15%

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

12

Fill factor limited only by the cross talk suppression need!

No special cross talk suppression technology applied

just intrinsic property of

SiMPl

devices

Slide13

@223K

Detection of particles

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

13

Excellent time stamping due to the fast avalanche process (<1ns)

MIP gives about 80pairs/

m

m

 huge signal in

SiPM

 allows operation at small DV

Reduction of dark rate and cross talk by at least an order of magnitude

<10

% GE

still

gives

high

MIP detection

efficiency

Slide14

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

14

Slide15

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

15

Slide16

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

16

Logic, TDC

, Photon

counter

Cell

electronics

Cell

electronics

Topologically flat surface

High fill factor

Adjustable resistor

value

Low RC -> very

fast

Active recharge

Ability to turn off noisy

pixels

Pitch limited by the bump bonding

Cell electronics: Active quenching,

Bias control,

Cell activity,

Digital output

Slide17

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

17

Topologically flat and free surface

High fill factor

Sensitive to light

Slide18

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

18

Topologically flat and free surface

High fill factor

Sensitive to light

Slide19

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

19

Logic, TDC

, Photon

counter

Cell

electronics

Cell

electronics

Topologically flat and free surface

High fill factor

Sensitive to light

Slide20

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

20

TDC, Photon counter, active recharge

Cell

electronics

Cell

electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensor

wafer

handle wafer

on sensor wafer

2. bond sensor wafer

to handle wafer

3. thin sensor side

to desired thickness

4. process

SiMPl

arrays

on top side

sensor

wafer

handle wafer

1.

Structured implant on

backside

5. Etching backside

& flip chipping on back side

Slide21

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

21

TDC, Photon counter, active recharge

Cell

electronics

Cell

electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensor

wafer

handle wafer

on sensor wafer

2. bond sensor wafer

to handle wafer

3. thin sensor side

to desired thickness

4. process

SiMPl

arrays

on top side

sensor

wafer

handle wafer

1.

Structured implant on

backside

5. Etching backside

& flip chipping on back side

Slide22

n

+

n

-

non-depleted

region

n

-

non-depleted

region

n

-

depleted gap

region

n

Next generation

SiMPl

devices

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

22

TDC, Photon counter, active recharge

Cell

electronics

Cell

electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensor

wafer

handle wafer

on sensor wafer

2. bond sensor wafer

to handle wafer

3. thin sensor side

to desired thickness

4. process

SiMPl

arrays

on top side

sensor

wafer

handle wafer

1.

Structured implant on

backside

5. Etching backside

& flip chipping on back side

Slide23

Jelena Ninkovic

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

23

Thanks for the attention!!

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