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AD22151ÐSPECIFICATIONS ParameterMinTypMaxUnitOperating4.55.06.0V Operating6.010mATC3 (Pin 3) Sensitivity/Volt160 Input Range1 VCC2. Sensitivity (External Adjustment, Gain = +1)0.4mV/GLinear Output Range1090% of VOutput Min5.0% of VOutput Max (Clamp)93% of VDrive Capability1.0mA V Offset Adjust Range5.095% of V Output Short Circuit Current5.0mANonlinearity (10% to 90% Range) 0.1% FSGain Error (Over Temperature Range)6.0G 950ppm 1.0%V/V 3 dB ROLL-OFF (5 mV/G)5.7kHz OUTPUT NOISE FIGURE (6 kHz BW)2.4mV/rms PACKAGE8-Lead SOIC OPERATING TEMPERATURE RANGEÐ40+150 ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readilyaccumulate on the human body and test equipment and can discharge without detection. Although theAD22151 features proprietary ESD protection circuitry, permanent damage may occur on devices to avoid performance degradation or loss of functionality. Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 VPackage Power Dissipation . . . . . . . . . . . . . . . . . . . . . .25 mWStorage Temperature . . . . . . . . . . . . . . . . . . .Ð50 . . . . . . . . . . . . . . . . . . . . . . . .15 mAMagnetic Flux Density . . . . . . . . . . . . . . . . . . . . . .UnlimitedLead Temperature (Soldering 10 sec) . . . . . . . . . . . . . .300 TemperaturePackagePackage ModelRangeDescriptionOptionAD22151YRÐ408-Lead SOICR-8 AD22151YR-REELÐ408-Lead SOICR-8 REV. A AD22151PIN CONFIGURATION TOP VIEW(Not to Scale) 8712AREA OF SENSITIVITY* TC2TC3VREFAD22151 (Not to Scale) 8712 SHADED AREA REPRESENTS MAGNETIC FIELD AREA OF SENSITIVITY (20MILS  20MILS) POSITIVE B FIELD INTO TOP OF PACKAGE RESULTS IN A POSITIVE VOLTAGE RESPONSE center of the die. The Hall plates are orthogonally sampled by TEMPERATURE Ð 140Ð40120100806040200Ð20OFFSET Ð V Figure 3.Relative Quiescent Offset vs. Temperaturenism is principally the redistribution of electrons throughout the Pin No.DescriptionConnectionemperature Compensation 1Outputemperature Compensation 2Outputemperature Compensation 3Input/OutpututputOutputGainInputeferenceOutput Positive Power Supply ÒvalleysÓ of the silicon crystal. Mechanical force on the sensor isattributable to package-induced stress. The package material2% and Gcharacteristic of the ADformance for a sensor and field combination (Bperature range with respect to applied field. Figure 6 representsshow similar data for a B 1060110160 Figure 4.Uncompensated Gain Variation (from REV. AÐ4Ð Ð600400Ð400Ð2000200DELTA SIGNAL Ð V Figure 5.Signal Drift over Temperature (Ð40 Ð401060110160 Figure 6.Gain Variation from 25 –400–2000DELTA SIGNAL – V–800800 Figure 7.Signal Drift over Temperature (Ð40 Ð401060110160 % GAIN Figure 8.Gain Variation (from 25function provides a compensation mechanism for the variousC. Pin 3 is internally connected totional Block Diagram). An external resistor connected between 15011274Ð2Ð40 TC1, TC2 VOLTS Figure 9.TC1, TC2, and TC3 with Respect to Reference(See temperature configuration in Figures 1 and 2, and typicalresistor values in Figures 10 and 11.)pensation for two reasons. First, the die temperature within the REV. A ture of TC1, TC3 ( a.The intrinsic Hall cell sensitivity TC b.Package induced stress variation in a. c.Specific field TC Ð200 ppm (Alnico), Ð2000 ppm(Ferrite), 0 ppm (electromagnet), and so on.d.R1, TC.either Pin 1 or Pin 2. Pin 1 is provided to allow for large nega-R1 itself will also affect the compensation, a low TC resistorFigures 10 and 11 indicate R1 resistor values and their associ-with an Alnico material permanent magnet. The TC of such mag-Ð200 ppm (see Figures 5 and 6). Figure 11 indicatesthat a compensating drift of 200 ppm at Pin 3 requires a nomi-nal value of R1 = 18 k(assuming negligible drift of R1 itself). 051020251530 Figure 10.Drift Compensation (Pins 1 and 3) vs. 05102025153035404550 Figure 11.Drift Compensation (Pins 2 and 3) vs.The gain of the sensor can be set by the appropriate R2 and R3 GinmVG=+¥ However, if an offset is required to position the quiescent out-put at some other voltage, the gain relationship is modified to: GinmVG The offset that R4 introduces is: CCOUT For example, at V6 mV/Gauss is required with a quiescent output voltage of 1 V,calculations below apply (see Figure 2).A value would be selected for R3 that complied with the variousconsiderations of current and power dissipation, trim ranges (ifTo achieve a quiescent offset of 1 V requires a value for R4 as: VVCCCC210375ÊËÁˆ¯˜=Ð. 85141666 The gain required would be 6/0.4 (mV/Gauss) = 15. Knowing the values of R3 and R4 and noting Eparallel combination of R2 and R4 required is: 151 141666 from the Hall cell. Clock feedthrough into the output signal isPSD indicates an rms noise voltage of 2.8 mV within the 3 dBbandwidth of the sensor. A wideband measurement of 250 MHzindicates 3.2 mV rms can be as low as 100 Hz. Passing the output signal through a100 Hz LP filter, for example, would reduce the rms noise volt-feedback resistor R3 as a simple means of reducing noise at thea 5 mV/G sensor bandwidth limited to 180 Hz with a 0.01 and GND at 25 5 dB/div 100H1
HSTART: 64HzNOISE: PSD ( 8mV/GAUSS 64HzY: 3.351 Figure 12.Power Spectral Density (5 mV/G) FREQUENCY – kHz 3dB FREQUENCY (kHz) Figure 13.Small Signal Gain Bandwidth vs. Gain 10.0mVBW TEK 25.0 kS/s CH2 P-P19.2mV Figure 14a.Peak-to-Peak Full Bandwidth (10 mV/Division) 10.0mVBW TEK 25.0 kS/s CH2 P-P4.4mV Figure 14b.Peak-to-Peak 180 Hz Bandwidth REV. A Narrow Body(R-8)Dimensions shown in millimeters and (inches) 0.25 (0.0098)0.19 (0.0075) 45 0 1.35 (0.0532) PLANE 0.10 (0.0040) 1 5.00 (0.1968)4.80 (0.1890) 4.00 (0.1574) 5.80 (0.2284)0.51 (0.0201)0.33 (0.0130) CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORCOMPLIANT TO JEDEC STANDARDS MS-012AA Ð600Ð400Ð2000200400600 % ERROR Figure 15.Integral Nonlinearity vs. Field 14012010080604020 GAIN = 3.78mV/G Figure 16.Absolute Offset Volts vs. Temperature REV. AC00675Ð0Ð2/03(A)PRINTED IN U.S.A.Ð8ÐRevision History Change to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 REV.A Tel: 781/329-4700www.analog.comFax: 781/326-8703© 2003 Analog Devices, Inc. All rights reserved. Adjustable Offset to Unipolar or Bipolar OperationGain Adjustable over Wide RangeLow Gain Drift over Temperature RangeAdjustable First Order Temperature CompensationRatiometric to VThrottle Position SensingPedal Position Sensing TEMP REFI OUT AMPREF GENERAL DESCRIPTIONThe AD22151 is a linear magnetic field transducer. The sensor NCR1GNDR2V NC = NO CONNECT OUTPUT F Figure 1.Typical Bipolar Configuration with Low NCR2V NC = NO CONNECT OUTPUT F Figure 2.Typical Unipolar Configuration with REV.A Fax: 781/326-8703© 2003 Analog Devices, Inc. All rights reserved. FEATURESAdjustable Offset to Unipolar or Bipolar OperationGain Adjustable over Wide RangeLow Gain Drift over Temperature RangeRatiometric to VCCAPPLICATIONSAutomotiveThrottle Position SensingValve Position SensingIndustrialAbsolute Position SensingFUNCTIONAL BLOCK DIAGRAM TEMP REFISOURCE DEMOD SWITCHESOUT AMPREFVCC/2 AD22151 tion can accommodate a number of magnetic materials commonly NCR1GNDR3R2VCC AD22151 NC = NO CONNECT OUTPUT 0.1
F Figure 1.Typical Bipolar Configuration with Low NCR1GNDR3R2VCC AD22151 NC = NO CONNECT OUTPUT 0.1
F R4 Figure 2.Typical Unipolar Configuration with Knowing the values of R3 and R4 and noting Eparallel combination of R2 and R4 required is: 151 141666 from the Hall cell. Clock feedthrough into the output signal isPSD indicates an rms noise voltage of 2.8 mV within the 3 dBbandwidth of the sensor. A wideband measurement of 250 MHzindicates 3.2 mV rms can be as low as 100 Hz. Passing the output signal through a100 Hz LP filter, for example, would reduce the rms noise volt-feedback resistor R3 as a simple means of reducing noise at thea 5 mV/G sensor bandwidth limited to 180 Hz with a 0.01 and GND at 25 5 dB/div 100H1
HSTART: 64HzNOISE: PSD ( 8mV/GAUSS 64HzY: 3.351 Figure 12.Power Spectral Density (5 mV/G) FREQUENCY Ð kHz 3dB FREQUENCY (kHz) Figure 13.Small Signal Gain Bandwidth vs. Gain CH2 10.0mV BW [ 3ACQS CH2 p-p19.2mV TEK STOP: 25.0 kS/s Figure 14a.Peak-to-Peak Full Bandwidth (10 mV/Division) BW [ 7ACQS CH2 p-p4.4mV 25.0 kS/sCH2 10.0mV Figure 14b.Peak-to-Peak 180 Hz Bandwidth Knowing the values of R3 and R4 and noting E 151 Thus: 141666 bandwidth of the sensor. A wideband measurement of 250 MHzindicates 3.2 mV rms LOGMAG5 dB/div 100
H1
HSTART: 64HzNOISE: PSD ( 8mV/GAUSS ) 64HzY: 3.351 Figure 12.Power Spectral Density (5 mV/G) FREQUENCY Ð kHz 3dB FREQUENCY (kHz) Figure 13.Small Signal Gain Bandwidth vs. Gain CH2 10.0mV BW M2.00ms [[ T3ACQS CH2 p-p19.2mV TEK STOP: 25.0 kS/s Figure 14a.Peak-to-Peak Full Bandwidth (10 mV/Division) BWM2.00ms [[ T7ACQS CH2 p-p TEK STOP: 25.0 kS/sCH2 10.0mV Figure 14b.Peak-to-Peak 180 Hz Bandwidth