PPT-PHYS389 - Semiconductor Applications L13

Author : wang | Published Date : 2024-06-08

1 Lecture 13 Radiation detectors II Germanium detectors Planar Coaxial Energy resolution Efficiency PHYS389 Semiconductor Applications L13 2 Interaction of gammarays

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PHYS389 - Semiconductor Applications L13: Transcript


1 Lecture 13 Radiation detectors II Germanium detectors Planar Coaxial Energy resolution Efficiency PHYS389 Semiconductor Applications L13 2 Interaction of gammarays with matter Gamma radiation is a very penetrating form of radiation that does not directly ionise the material through with it travels. All rights reserved This document details all known silicon errata for the iMX27 Table 1 provides a revision history for this document Table 1 Document Revision History Rev Number Date Substantive Changes 06 102012 Added errata 11 12 13 and 14 Upd 20062009 All rights reserved Pressure Integrated Silicon Pressure Sensor Manifold Absolute Pressure Sensor OnChip Signal Conditioned Temperature Compensated and Calibrated The MPX4250A series Manifold Absolute Pressure MAP sensor for engine control 54 Cont act resistance to a thin semiconductor layer The contact between a metal contact and a thin conducting layer of semiconductor can be described with the resistive network shown in Figure 35 which is obtain 8 Other Unipolar Junctions The metal semiconductor junction is the most studied unipolar junction be not the only one that occurs in semiconductor devices Two other unipolar junctions are the homojunction and the H 20062009 All rights reserved Pressure Integrated Silicon Pressure Sensor OnChip Signal Conditioned Temperature Compensated and Calibrated The MPX4250 series piezoresistive transducer is a stateoftheart monolithic silicon pressure sensor de signed f Fig 31.21: NORbased ROM arrayAs we know, only one word line is activated at a time by raising tis voltage to VDD, while all other rows are held at a low votlage level. If an active transistor exists a AND . MOLECULAR . CHARACTERIZATION . OF . KENYAN BASMATI . RICE VARIANT LINES. : . AN APPROACH . TO . GERMPLASM IMPROVEMENT AND PRESERVATION. FAITH M. . MWENDWA, PROF. . E. N. MAGIRI, DR. WANJOGU. Optoelectronics. Optoelectronics. is the study and application of . electronic. devices that source, detect and control . light. , usually considered a sub-field of . photonics. .. Optoelectronic devices are . CORPORATE INSTITUTE OF SCIENCE . & TECHNOLOGY . , BHOPAL. DEPARTMENT OF ELECTRONICS & COMMUNICATIONS . BY- PROF. RAKESH k. JHA. SCHOTTKY BARRIER DIODE. The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.. Outline. 3 . Energy Bands and Charge Carriers in Semiconductors. Charge Carriers. . concentration. Temperature dependence. The Fermi distribution for intrinsic (. undoped. ) semiconductor. The Fermi distribution for . Salah . Chaurize. August 21, 2013. Notching History. Notching is controlled removal of selected proton bunches to facilitate a gap in the beam.. This gap allows the Booster . extraction kickers . magnetic fields to reach full value to allow extraction of the remaining bunches.. Lecture-27. Photo-Catalysis. Acceleration of a photoreaction in the presence of a catalyst. . Photon is absorbed by an adsorbed substrate. . Photocatalytic activity (PCA) depends on the ability of the catalyst to create electron–hole pairs.. Asma. . Alwaei. Review of Semiconductor Physics. a) Energy level diagrams showing the excitation of an electron from the valence band to the conduction band.. The resultant free electron can freely move under the application of electric field.. Semiconductor detectors have a . high density. . . ● large energy loss in a short distance. . ● diffusion effect is smaller than in gas detectors resulting in achievable position resolution of less then 10 .

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