/
Think of Frequency Think of Frequency

Think of Frequency - PowerPoint Presentation

alida-meadow
alida-meadow . @alida-meadow
Follow
375 views
Uploaded On 2016-06-25

Think of Frequency - PPT Presentation

Think of Introduction to Crystal wwwtxccorpcom TXC Confidential amp Proprietary 1 TXC Confidential amp Proprietary 2 Quartz Crystal Basic Structure 33 45 67 21 21 00 ID: 377831

amp crystal confidential txc crystal amp txc confidential proprietary frequency quartz level temperature ppm tunable oscillator range varactor electric

Share:

Link:

Embed:

Download Presentation from below link

Download Presentation The PPT/PDF document "Think of Frequency" is the property of its rightful owner. Permission is granted to download and print the materials on this web site for personal, non-commercial use only, and to display it on your personal computer provided you do not modify the materials and that you retain all copyright notices contained in the materials. By downloading content from our website, you accept the terms of this agreement.


Presentation Transcript

Slide1

Think of Frequency

Think of

Introduction to Crystal

www.txccorp.com

TXC Confidential & Proprietary |

1Slide2

TXC Confidential & Proprietary |

2

Quartz Crystal Basic: Structure

33

45

67

21

21

00

79

67

45

12

21

45

67

33

88

55

79

00

88

79

00

88

Silicon

Oxygen

Domain

Wall

X

Y

Z

Constitutes :

Silicon Dioxide, SiO

2

Crystal System

:

Trigonal

32

Melting Point :

~ 1,750 degree C @ 1

atm

Hardness :

~ 7.2

Mohs

@ 1

atm

Nature Quartz

Synthetic QuartzSlide3

TXC Confidential & Proprietary |

3

Si

4+

O

2-

O

2-

Si

4+

O

2-

O

2-

-

-

+

+

Si

4+

O

2-

O

2-

+

+

-

-

- Piezoelectric Effect

- Reverse Piezoelectric Effect

Si

4+

O

2-

O

2-

Electric neutral

When a pulling-outward force

is applied on O

2-, a positive electric field is induced.When a pushing-inward forceis applied on O

2-, a negative electric field is induced.Electric neutral

- -

- - - -

Si

4+

O

2-

O2-

+

+

+

+

+

+

+

+

+

+

+

+

-

-

-

-

- -

- - -

- - -

-

- - - -

-

+

+

+

+

+

+

+

+

+

+

+

+

Si

4+

O

2-

O

2-

When

an

electric field

is applied,

the

induced electric filed is

generated,and force the O2- moving outward.

When an electric field is applied, the induced electric filed is generated,and force

the O2- moving inward.

Quartz Crystal Basic: Piezoelectricity Slide4

TXC Confidential & Proprietary |

4

Natural

Quartz

Synthetic Quartz

Quartz Crystal Basic:

Natural vs. SyntheticSlide5

TXC Confidential & Proprietary |

5

AUTOCLAVE

HYDROTHERMAL METHOD

RAW MATERIAL

Silica HIGH TEMPERATURE: ~ 350 ~ 400 ℃

HIGH

PRESSURE

~ 900 ~ 1,000 Kg / cm

2

HIGH TEMP. STABILITY

± 3 ℃

LONG GROWTH TIME

1 ~ 6 Month

HIGH PURITY Infra-Red Absorption (IRA)

: 3585 CM-1

Crystal Growth

Region (~300

)

Dissolving

Region (~400

℃)

Quartz Crystal Basic: Synthetic QuartzSlide6

TXC Confidential & Proprietary |

6

Quartz Crystal Basic:

Synthetic Quartz

Grown quartz bars from autoclave

Moving new autoclave to the factorySlide7

TXC Confidential & Proprietary |

7

Wire Sawing

Quartz Bar

A

1

2

3

4

5

6

7

8

9

0

EN

B

C

D

Lapping

22.1372

Wafer

Frequency

Processing time: <10 days

Manufacturing Process: From Bar to BlankSlide8

TXC Confidential & Proprietary |

8

Low Frequency

CT : +38

0

DT : -52

0

ET : +66

0

FT :

-

57

0

High

Frequency

AT

: +35

0

12’

BT : -49

0

Many cutting

angles for various applications.

AT

cutting is one of the most popular and applicable angles.

X

m

r

R

m

Z

r

R

m

X

r

Z

X

NT

GT

DT

BT

AT

CT

+2

0

+5

0

X

+5

0

+5

0

+50

0

+2

0

X

Y

Cutting AngleSlide9

TXC Confidential & Proprietary |

9

Cutting Angle: FT Characteristic of Different C

uts

20

40

0

- 20

- 40

- 60

- 80

- 100

- 160

- 120

- 140

- 40

- 20

0

20

40

60

80

Frequency Change in ppm

Temperature (

º

C )

AT

AT

GT

GT

DT

DT

XY

XY

CT

CTSlide10

TXC Confidential & Proprietary |

10

Cutting Angle: AT-Cut FT Characteristic

r

m

R

R

R

R

r

m

Y

Z

AT-cut

BT-cut

49

o

35¼

o

-1’

0

1

2

3

4

5

6

7

8

-1

0

1

2

3

4

5

6

7

8



Y-bar quartz

Z

25

20

15

10

5

0

-5

-10

-15

-20

-25

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

85

90

f

f

(ppm)

Temperature (

o

C

)

 = 35

o

12.5’+ ,  = 0 for

fundamental mode

plano-plano

AT-cut

= 35

o

20’ + ,  = 0

for 5th overtone

AT-cutSlide11

TXC Confidential & Proprietary |

11

Thickness of Blank: Determines Frequency

A

l

AT Cut Crystal

- Resonance frequency is determined by thickness of blank.

- For a 20 MHz crystal, the thickness is around 83um.

(

The diameter of human hair is around

50~80um)

- The thinner the blank, the higher the frequency is.

Note

: The constant of 1670 is not the

exact number

for AT cutting. This number ranges from 1650 ~ 1685 depends on

the

dimension and thickness of the AT quartz plate.

FrequencySlide12

TXC Confidential & Proprietary |

12

Structure and Manufacturing Process

IC Die Bonding

Wire Bonding

Blank Cleaning

Base Plating

Frequency Adj.

Final Testing

Marking

Taping

Seam Sealing

Mechanical Testing

Blank Auto-Mounting

Crystal

Oscillator

Oscillator

40.000

TXC CM211

24.576

TXC CN001

Crystal

Metal Lid

Plated Blank

Ceramic Package

(Bottom)

Ceramic Package

(Top)

Oscillation IC

Processing time: <10 daysSlide13

TXC Confidential & Proprietary |

13

Specification

Tips of Defining the Specification of a Crystal:

1. Determine the Nominal Frequency

Ex: 8Z Series (2.5x2.0 mm)

2. Choose

the Load

Capacitance

3.

Define the Frequency Tolerance and Stability

4.

Define the Drivel

Level, Effective Resistance, and Shunt capacitance C

0Slide14

TXC Confidential & Proprietary |

14

Load Capacitance Choosing : C

L vs. Trim Sensitivity

Load Capacitance: 06~10 pF, high trim sensitivity: unstable, but tunable

Load

Capacitance: 16~30 pF, low trim sensitivity: stable, but hardly tunable

 

Ex. 3.2 x 2.5mm, 12.0 MHz, CL=8.0

pFSlide15

TXC Confidential & Proprietary |

15

Package Size vs

Drive Level & Resistance

Ex: 25MHz Crystal

 Slide16

TXC Confidential & Proprietary |

16

Worldwide Lab Facilities

Three FAE locations with RD level testing equipment for Oscillation Circuit/Oscillator

When the assistance is needed, please contact account manager to arrange the test in different locations

Ningbo, China

Taoyuan

, Taiwan

San Jose, USA Slide17

TXC Confidential & Proprietary |

17

Services

Unit Analysis

Crystal

& Tuning Fork

Electrical Testing

(S&A 250B)

SPICE Model (RLC Model)

Oscillator

Electrical Testing

Testing

Temperature

-73

˚C ~175

˚CBoard Evaluation and Circuit Matching

Accuracy of Frequency

Drive Level

Negative Resistance

Start-up Time Operating Temperature

Testing (Stability)

Failure Part AnalysisInitial FA report Slide18

TXC Confidential & Proprietary |

18

Measuring Instruments and Test EquipmentSlide19

TXC Confidential & Proprietary |

19

Purpose of Matching

Mismatched Circuit:

None or inconsistent oscillation

Long startup timeBad temperature performanceCrystal resonator damaging

Bad jitter and frequency errorOthersMeasurements:

Accuracy of

Frequency

Drive Level

Negative Resistance

Startup time

Operating Temperature Test (Stability)Slide20

Think of Frequency

Think of

Introduction to Crystal Oscillators

www.txccorp.com

TXC Confidential & Proprietary |

20Slide21

TXC Confidential & Proprietary |

21

Crystal Oscillators

1.

Least integrated circuitry inside IC

2.

Best noise performance in LSI-based crystal oscillator

3.

±15 PPM

level temperature stability

4.

±10 PPM level frequency accuracy based on physical tuning capability

Amplifier

Buffer

Crystal

C

d

C

g

GND

F

out

VDD

Simple Packaged Crystal Oscillator (XO)

No Voltage Tunable CapabilitySlide22

TXC Confidential & Proprietary |

22

1.

Integrated

varactor inside

IC

2.

The tunable range of varactor and the load sensitivity of X'tal resonator influences the tunable range of VCXO

3.

±15

PPM level temperature stability

4.

±10 PPM level frequency accuracy based on physical tuning capability

Tunable Range over Temp.

VC

VC-plus

VC-minus

Amplifier

Buffer

(CMOS/

Differenial

)

F

out

VDD

Crystal

C

d

C

g

Varactor

V

C

GND

Voltage-Controlled Crystal Oscillator (VCXO)

Crystal OscillatorsSlide23

Tunable Range over Temp.

TXC Confidential & Proprietary |

23

Amplifier

Buffer

F

out

VDD

Crystal

C

d

C

g

Varactor

VC

Temperature Sensor and Compensation Circuitry

GND

1.

Integrated varactor

& compensation

circuit inside IC

2.

The tunable range of varactor and the load sensitivity of X'tal resonator influences the tunable range of VCXO

3.

<±2.5

to

±

0.28

(S3-TCXO)

PPM

level temperature stability

4.

<±2.5 PPM

level frequency accuracy based on physical tuning capability

Temperature-Compensated Crystal Oscillator (TCXO)

Crystal Oscillators

25 ̊C

T

F

Crystal

IC Compensated

Result

2.5

ppm

0.3 ppm (Stratum 3 TCXO)Slide24

TXC Confidential & Proprietary |

24

Oven

Amplifier

Buffer

F

out

V

dd

Crystal

C

d

C

g

Varactor

V

c

Temperature Sensor

Oven Control Circuit

1.

Discrete

electrical

components

&

oven controlled

circuit

2.

The tunable range of

varactor

and the load sensitivity of

X'tal

resonator influences the tunable range of VCXO

3.

0.1

PPM

level temperature stability

4.

0.1

PPM

level frequency accuracy based on physical tuning capability

Tunable Range over Temp.

(Depends on crystal cut)

Oven-Controlled Crystal Oscillator (OCXO)

Crystal OscillatorsSlide25

Less than 1/3 of CMOS voltage swing

Less than 1/6 of CMOS voltage swing

TXC Confidential & Proprietary |

25

Differential Output

CMOS (Single-ended)

Differential

CMOS: Single-ended

Differential

*

: Dual-ended (same frequency)

Advantage of Differential Output

Low

voltage swing

Better

noise rejection

*:

3 kinds of differential output that TXC is using:

LVPECL, LVDS, HCSLSlide26

TXC Confidential & Proprietary |

26

Thank you