p implant responsible for charge multiplication covers only part of the strip Investigate extension of p to cover the entire sensor and ID: 528967
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Slide1
Strips: p+ implant responsible for charge multiplication covers only part of the strip.Investigate extension of p+ to cover the entire sensor and topush it deeper into the bulk
Marta
Baselga
, Colin Parker & Hartmut Sadrozinski
SCIPP, UC Santa CruzSlide2
Strip detectorsPitch p=80 mmStrip w [mm]Metal [mm]P-implant [mm]w/pP-
implant
/pitch
AC1
24
20
6
0.3
7.5%
AC2
24
24
6
0.3
7.5%
AC3
24
28
6
0.3
7.5%
AC4
48
44
30
0.6
37.5%
AC5
48
48
30
0.6
37.5%
AC6
48
52
30
0.6
37.5%
AC7
62
58
44
0.775
55%
AC8
62
62
44
0.775
55%
AC9
62
66
44
0.775
55%
AC10/AC11/DC
32
40
14
0.4
17.5%Slide3
Low resistivity substrate wafer
10
m
m
525
m
m
Pitch=80
m
m
Pitch=80
m
m
285
m
m
Epitaxial
wafer
Float
ZoneSlide4
Pitch 80umAC3AC6AC9
24
m
m
48
m
m
62
m
m
pstop
pstop
n++
P+
m
ultiplication
implantSlide5
REGULAR STRIPS AC6Slide6
Regular Strips(AC 6 FZ Deep annealing)Slide7
Electric field of regular strips @1000V(AC 6 FZ Deep annealing)Slide8
IV and CV for regular strips(AC 6 FZ Deep annealing)Slide9
NEW STRIPS Doping boron peak 1e15cm^-3 boron at 2umSlide10
New strips (boron at 2um from the surface) doping boron 1e15cm^-3Slide11
New strips electric field @1000V doping boron 1e15cm^-3 @2umSlide12
IV and CV for strips with boron @ 2umboron doping 1e15cm^-3Slide13
NEW STRIPS Doping boron peak 1e15cm^-3 at 5um deepSlide14
New strips (boron at 5um from the surface) doping boron 1e15cm^-3Slide15
New strips electric field @1000V doping boron 1e15cm^-3Slide16
IV and CV for strips with boron @ 5umboron doping 1e15cm^-3