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Formation of Sub-10 nm width InGaAs finFETs Formation of Sub-10 nm width InGaAs finFETs

Formation of Sub-10 nm width InGaAs finFETs - PowerPoint Presentation

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Uploaded On 2016-07-01

Formation of Sub-10 nm width InGaAs finFETs - PPT Presentation

of 200 nm Height by Atomic Layer Epitaxy D CohenElias 1 JJM Law 1 HW Chiang 1 A Sivananthan 1 C Zhang 1 B J Thibeault 1 WJ Mitchell 1 S Lee 1 AD Carter ID: 384760

gate fin ingaas regrowth fin gate regrowth ingaas source drain growth ale height fins surf layer high atomic metal

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