Direct Modulator These quadrature modulators developed by RFMD will enable base station manufacturers to capitalize on the numerous benets of direct modulation over dualconversion transmit architect PDF document - DocSlides

Direct Modulator  These quadrature modulators developed by RFMD will enable base station manufacturers to capitalize on the numerous benets of direct modulation over dualconversion transmit architect PDF document - DocSlides

2014-12-13 217K 217 0 0

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These direct modulators set the industry standard with outofband noise density as low as 156 dBmHz and carrier and sideband suppression of 35 dBc The RF2483 is an ultralownoise dualband direct modulator with AGC designed for base station application ID: 23256

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Presentations text content in Direct Modulator These quadrature modulators developed by RFMD will enable base station manufacturers to capitalize on the numerous benets of direct modulation over dualconversion transmit architect


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Direct Modulator
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These quadrature modulators developed by RFMD will enable base station manufacturers to capitalize on the numerous benets of direct modulation over dual-conversion transmit architectures. These direct modulators set the industry standard with out-of-band noise density as low as -156 dBm/Hz, and carrier and sideband suppression of 35 dBc. The RF2483 is an ultra-low-noise, dual-band direct modulator with AGC designed for base station applications. The RF3854 is a multimode quad-band quadrature modulator with integrated variable gain power amplier (PA) drivers for base station applications. The RF2850 and RF2484 are direct quadrature modulators specically designed to meet 2.5G and 3G base station system requirements. Each device includes quadrature generation, matched double-balanced mixers, summing ampliers and RF outputs. The RF2483 and RF3854 also include variable gain control and independent high and low-band oscillator inputs and RF outputs. High-Performance Modulators for CDMA, WCDMA, TDMA, GSM and EDGE Standards Features: Excellent linearity Very low noise oor High carrier and sideband suppression Supports multiple modulation formats Full infrastructure qualication System Benets: Single transmit path Reduced ltering Simpler frequency planning Fewer PLL circuits needed Meets all system requirements Value: Reduced system complexity Less board space Reduced part count Smaller and lower cost products System Level Block Diagram Direct Modulation Parameter Units RF2483 RF3854* RF2484 RF2850 Frequency range (MHz) 700-1000/1700-2200 800-2200 800-2500 1700-2500 Power supply voltage (V) 2.7 - 3.3 2.7-3.3 AGC range (dB) 36/35 90 NA NA Output power (dBm) 0.8/0.4 -14 -13 -14 Out-of-band noise density (dBm/Hz) -156/-155 -150 -152.5 -158 Carrier suppression (dBc) 52/40 40 35 40 Sideband suppression (dBc) 45/43 40 35 40 Output IP3 (dBm) 19/20 20 19 21 Power consumption (mA) 85 112 66 65 Technology SiGe BiCMOS SiGe BiCMOS GaAs HBT GaAs HBT Package Leadless 20-pin 4X4mm Leadless 24-pin 4X4mm Leadless 16-pin 4X4mm QFN 16-pin 4x4mm *All Measurements are taken at 2.14 GHz
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RF2484 Direct Quadrature Modulator Stable performance over temperature Designed to meet base station system requirements Low noise oor LO HB LO HB LO LB LO LB MODE Q SIG MODE Q SIG VREF GC DEC GC RF OUT LB GND MODE I SIG I SIG MODE 12 11 10 18 17 16 15 14 13 23 22 21 20 19 24 Note: The die flag is the ch p' s ma n ou nd DI Fl x2 Mode Contro and Biasing Power Control RF OUT LB RF OUT HB RF OUT HB RF OUT WB RF OUT WB VCC1 VCC2 -10 -20 -30 -40 -50 -60 -80 -70 -60 -50 -40 -30 -20 -10 Carrier Suppression Sideband Suppression 10 20 19 17 16 15 14 13 12 11 10 GND RF OUT HB GND RF OUT LB GC O L GND LO O H GND SI SI EN GC DEC VREF QSIG QSIG AND SEL owe ontro iasing CC CC CC RF2483 Dual-Band Direct Quadrature Modulator Low noise reduces lter requirements Independent low and high-band outputs spanning from 700 to 2200 MHz Output Noise 20 MHz Of fset, I&Q = 800mVpp 1.2Vdc Output Noise 20 MHz Of fset, I&Q = 0mVpp 1.2Vdc Output Power I&Q = 800mVpp 1.2Vdc -130 -135 -140 -145 -150 -155 -160 -165 -170 0.5 1.5 2.5 Gain Control (V) Low Band Output Noise at 20 MHz Offset vs GC Vcc=2.7V , LO=900 MHz @ 0 dBm Output Noise (dBm/Hz) Output Power (dBm) -10 -15 -20 -25 -30 -35 GN RFREF GN OR GN 12 11 10 16 15 14 13 QRE QSI GN IREF SI GN +45 CC CC FOU CC GND QRE IREF SIG GND GND 13 14 15 16 10 11 12 QSIG GND GND GND PD F OU GND -4 CC CC RF2484 PCS CDMA Spectra at Various Output Levels -100 -90 -80 -70 50 -40 30 20 1957.5 1958 1958.5 1959 1959.5 1960 1960.5 1961 1961.5 1962 1962.5 Frequency (MHz RF2483 Low-Band Output Noise at 20 MHz Offset vs GC (Vcc = 2.7V, LO = 900 MHz @ 0 dBm) RF3854 WCDMA Carrier and Sideband Suppression vs Output Power (Vcc = 2.7V, IQ = 1.2 VDC, 800m Vpp Diff @ 100 kHz, LO = 1950 MHz @ -12 dBm) RF3854 Multi-Mode Quad-Band Quadrature Modulator Integrated variable gain PA drivers Low noise Frequency doublers, dividers and LO buffers are included to support a variety of LO generation options RF2850 Direct Quadrature Modulator Targeted for high-performance wireless infrastructure applications: CDMA20001x, WCDMA, TD-SCDMA, GSM/ GPRS/EDGE, PHS and point- to-point radio applications RF frequency output of 1.7 GHz to 2.5 GHz is ideally suited for next- generation 3G base stations Based on an OIP3 of 21 dBm and a very low noise oor of -158 dBm/Hz, ACPR performance of -74 dBc and SNR performance of -84 dBc can be obtained with a single carrier WCDMA waveform (Test Model 1) RF2484 PCS CDMA Spectra At Various Output Levels (ACPR @ 885 kHz, Vcc = 5.0V, Vref = 4.1V, T=25C) CP = -11.1 dBm; ACPR = -71 dBc CP = -12.9 dBm; ACPR = -72 dBc CP = -14.3 dBm; ACPR = -73 dBc -20 -30 -40 -50 -60 -0 -80 -90 -100 1957.5 1958 1958.5 1959 1959.5 1960 1960.5 1961 1961.5 1962 1962.5 Frequency (MHz) Center 2.14 GHz 1.46848 MHz Span 14.6848 MHz -25 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -125 RBW 30 kHz RF At 0 Db VBW 300 kHz Swt 2s Unit dBm RF level -25 dBm RF2850 WCDMA Single Carrier ACPR Performance Test Model 1, 64 DPCH, ACPR @ 2140 MHz, 1 MHz Integrated BW, 4 MHz Offset LO @ -5 dBm, Vcc @ 5V, Icc @ 65 mA Channel Power = -14 dBm ACPR = -74 dBc SNR = -84 dBc Noise Floor@20 MHz offset = -158 dBm/Hz
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7628 Thorndike Road, Greensboro, North Carolina 27409-9421 USA Phone 336.664.1233 Fax 336.931.7454 For sales or technical support, contact RFMD at 336.678.5570 or sales-support@rfmd.com. what’s next in RF Power Ampliers Transceivers Chipsets Front-End Modules Transmit Modules Gain Blocks High Power Ampliers Pre-Driver Ampliers Low Noise Ampliers Modulators Switches GaAs HBT 25 GHz FT, 2 Micron, High Efciency, High Dynamic Range, Low Noise, High Linearity, Single Supply Si BiCMOS 25 GHz FT, 0.5 Micron, Low-Cost Process SiGe BiCMOS 47 GHz FT, Bipolar RF Technology, Excellent for High Levels of RF Integration and High-Performance Rx GaAs MESFET 20 GHz FT, 0.6 Micron, Low Noise, Excellent for Control Components (Switches and Attenuators) Si CMOS 0.13 Micron, Low-Cost, Efcient Digital Circuitry InGaP HBT 30 GHz FT, 2 Micron, High Efciency, High Dynamic Range, Low Noise, High-Linearity, Single Supply GaAs pHEMT 30 GHz FT, 0.5 Micron High-Power MMIC Process GaN HEMT 25 GHz FT, 0.5 Micron High-Power, High-Linearity Process Optimum Technology Matching RFMD , Optimum Technology Matching are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2007 RFMD. 3.07.2000 Optimum Technology Matching Strategy RFMD’s success has been driven in part by our deep design expertise in multiple semiconductor process technologies—GaAs HBT, Si BiCMOS, SiGe BiCMOS, GaAs MESFET, Si CMOS as well as our newest processes, InGaP HBT, GaAs pHEMT and GaN HEMT—and our Optimum Technology Matching (OTM) strategy. Through OTM, RFMD engineers match the appropriate process technology and device technology to each product according to the best possible combination of price and performance.

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