PPT-High Brightness Electron Source Development

Brightness Limiting Phenomena Simulated bunch profile for 20pC and 80pC bunch charges from a realistic birefringent pulsestacked laser profile The onset of the virtual cathode instability VCI. Bob Ashley 6-. 21. -2013. Overview. Systems of the TEM. Illumination. Condenser lens system. Specimen manipulation stage. Imaging system. Image formation. Magnification. Recording system. Reading List. Interferometry. Rick . Perley. , NRAO/Socorro. 2. Topics. Why . Interferometry. ?. Groundwork: Brightness, Flux density, Power, Sensors, Antennas, and more …. The Quasi-Monochromatic, Stationary, Radio-Frequency, Single Polarization Interferometer. throughout the radiation belts. Sarah . Glauert. British . Antarctic Survey, Cambridge, UK. SPACECAST . stakeholders . meeting, . BAS, . 7 February 2014. Electron Radiation Belts. High energy electrons (E>500 keV) are trapped by Earth’s magnetic field. A. Cianchi. #1,2. , M. Castellano. 3. , L. Catani. 2. , E. Chiadroni. 3. , G. Gatti. 3. , K. Honkavaara. 4. , G. Kube. 4. 1. University of Rome “Tor . Vergata. ” v. . della. . Ricerca. . Scientifica. nanotube : Small source many fringes:N. Jonge, et al. Nature 420, 393 (2002) Thermal electron source. Few fringeshttp://em-outreach.ucsd.edu/web-course/Sec-I.D/Sec-I.D.html Fresnel Fringes J. Elec. M James . B. Murphy, Director. BES Scientific User Facilities . Division. Status of International Light Sources:. Today and in the Near Future. presented . to the. BESAC . Meeting. 25 July 2013. Light Sources: ERL, . Chad . Auginash. April 20, 2015. Abstract. High electron mobility transistor(HEMT) is a transistor that operates at higher frequencies, typically in the microwave range. They are used in applications that require high frequency, such as cell phones, RF applications, and some power applications. HEMTs are transistors that utilize the 2-dimensional electron gas(2DEG) created by a junction between two materials with different band gaps called a heterojunction. The two most commonly used materials to create the heterojunction are a highly doped n-type donor material, typically . Evan Walsh. Mentors: Ivan . Bazarov. . and David Sagan. August 13, 2010. Accelerating charges emit electromagnetic radiation. For synchrotron radiation, the radiation is usually X-rays. One of the main goals of the new . High Brilliance Beam Diagnostics A. Cianchi University of Rome “ Tor Vergata” and INFN Advanced Accelerator Physics Course 2015 Outline Brightness and Brilliance Fundamental parameters Transverse and longitudinal measurements Alexander Cahill. UCLA Dept. of Physics and Astronomy. For the UCLA/SLAC/INFN collaboration. June 30, 2017. Outline. Motivation. Cryo. RF Experiments. RF Photoinjector Design. Beam Dynamic Studies. Conclusions. Challenge: . Laser accelerators can achieve very high accelerating gradients, but as a rule require very high peak power. High peak power lasers are not easily scalable to high average power. Many HEP applications (i.e. ILC positron source, or . Amir . Abdurahim. EE4611. 04/11/2016. Introduction. Is a . FET. Uses Hetero-junction . instead of . PN . junction . Uses . high mobility . m. aterials (. GaAs. /. AlGaAs. , . GaN. /. AlGaN. , III-V). Figure 1:Field emitter gun; the electron source in field emission scanning electron microscope. The only electron source designed for highresolution imaging and suitable for various kinds of materials Kurt . Aulenbacher. . (Uni. Mainz). Erdong Wang. . (BNL). 6/26/17. 1. Talks. . summary:. . Photocathode. 6/26/17. 2. 1. 6. 1. 3. 3. 6. . invitation. . talks+1. . contribution. . talks. 1. 5. 1.