In this letter the authors con64257rm that this is strongly determined by the abruptness of the interface For completely amorphous 64257lms the passivation quality improves by annealing at temperatures up to 260 57520C most likely by 64257lm relaxat ID: 46358
Download Pdf The PPT/PDF document "Abruptness of SiH Si interface revealed ..." is the property of its rightful owner. Permission is granted to download and print the materials on this web site for personal, non-commercial use only, and to display it on your personal computer provided you do not modify the materials and that you retain all copyright notices contained in the materials. By downloading content from our website, you accept the terms of this agreement.
