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ATLAS Pixel Detector Upgrade: ATLAS Pixel Detector Upgrade:

ATLAS Pixel Detector Upgrade: - PowerPoint Presentation

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ATLAS Pixel Detector Upgrade: - PPT Presentation

IBL Insertable BLayer Tobias Flick University Wuppertal 17092009 VERTEX 2009 Putten Netherlands Preliminary Overview Current ATLAS pixel detector What is the IBL and why do we need it ID: 411326

atlas pixel 2009 upgrade pixel atlas upgrade 2009 pipe ibl amp sensor stave layer chip beam module sensors cooling

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Slide1

ATLAS Pixel Detector Upgrade:IBL – Insertable B-Layer

Tobias FlickUniversity Wuppertal17.09.2009, VERTEX 2009 Putten, Netherlands

PreliminarySlide2

OverviewCurrent ATLAS pixel detector

What is the IBL and why do we need it?IBL components:ElectronicsSensorsMechanicsReadout constraintsSummary and Outlook

17.09.2009

2

ATLAS Pixel Upgrade

REMARK: The R&D has just started and therefore many items I show are preliminarySlide3

17.09.2009ATLAS Pixel Upgrade

3

The current ATLAS Pixel Detector

3 barrel layers

2 x 3 disc layers

in forward direction

Stave/Sector

:

carbon

support

structure

13/6

modules

cooling

Al

micro

cable

1744

pixel

modules

112

staves

and 48

sectors

80

million

R/O

channels

Slide4

Module and Readout

17.09.2009ATLAS Pixel Upgrade

4

Oxygen enriched “n-in-n” silicon sensor (2 x

6 cm²)

Radiation hardness up to 50

MRad

2

x

8 FE chips bump bonded to sensor

Flex-hybrid with pigtail or cable

Module control chip (MCC)

Read out via optical connection at 40 Mb/

s

or 80 Mb/

s

One data connection (for

b-layer two) and one command connection per moduleSlide5

Forecast Peak & Integrated Luminosity Evolution

New injectors + IR upgrade phase 2

ATLAS will need ~18 months shutdown

goal for ATLAS

phase-I upgrade:

550

fb

-1

recorded

cope

with

~

75

pile-up events each

BC

M.

Nessi

, CARE-HHH LHC crab-cavity validation mini-workshop August 2008, R.

Garoby

, LHCC July 08

2026

2025

2024

2023

2022

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

2010

2026

2025202420232022202120202019201820172016201520142013201220112010

shifted one year

shifted one year

Collimation phase 2

Linac4 + IR upgrade phase 1

17.09.2009

5

ATLAS Pixel UpgradeSlide6

A fourth layer for Pixel: The IBL17.09.2009

ATLAS Pixel Upgrade

6

Due to the expected lifetime of the B-layer sensors an upgrade of the innermost layer is necessary before the LHC phase-I upgradeGiven the actual luminosity profile and the installation in 2014 the current B-layer will still be quite sufficient, but this will decrease with further time

It should be done in new technology, but integrated as part of the existing Pixel detector

Taking into account the activation of the material, the extraction, and integration of the B-layer the only option is to integrate a new fourth layer and leave the existing package in place

Beam pipe

IBL with 2 sensor

Rows per stave

(“bi-stave”)

Present B-LayerSlide7

Layouts under Study

14 staves, each with 32 FE-I4 Frontend chips Sensor surface ~ only 0.2 m216 degree tilt angle~35 mm sensor radius~33 mm inner radius,

41.5 mm outer radiusBeam pipe IR 25 mm

(official confirmation pending)Pad size 50x250m2

Chip size 20.2x19.0mm

2

Radiation hardness >2MGy

Material : 1.5% for IBL (old layers 2.7%)

Beam pipe

IBL with single

Sensor row

Present B-Layer

17.09.2009

7

ATLAS Pixel UpgradeSlide8

The IBL Project17.09.2009

ATLAS Pixel Upgrade8

The new layer will be a new development

Sensors and electronics must withstand higher radiation doseFE chips need to consume less power and serve higher data read outReadout must fit into the existing hard- and software scheme

The new layer will be installed closer to the interaction point:

Higher hit occupancy needs to be handled

Beam pipe will be shrunk in radiusSlide9

IBL Performance

Improvement of IP resolution: Z: 100m  ~60

mR: 10

m  ~7

m

b-tagging: Light Jet rejection factor improves by factor ~2

To maintain Pixel Detector performance with inserted layer, material budget is critical.

Pad size in Z: 250

m

17.09.2009

9

ATLAS Pixel Upgrade

Component

% X

0

beam-pipe

0.6

New-

BL @

R=3.5 cm

1.5

Old

BL @

R=5 cm

2.7

L1 @ R=8 cm

2.7

L2 + Serv. @ R=12 cm

3.5

Total

11.0Slide10

IBL Sensor & Module

Currently: define sensor specifications for IBLLayoutOperational requirementsTechnology specific issuesTo be used for module design and sensor manufacturer market survey & contact

All sensor prototyping submissions include FE-I4 layoutsPlanar: CiS, Hamamatsu, (VTT)

3D: Stanford, FBK, CNM

discussion

with sensor

R&D groups ongoing

Pixel length

0.25 mm

Pixel width

0.05 mm

Columns per chip

80

Rows per chip

336

Thickness

0.25 mm

Maximum length of long pixel spanning gap between chips

0.45 mm

Maximum inactive margin in r

ϕ

1 mm

Maximum sensor size

41.4 mm x 18.8 mm

Bump pad &

passivation

layer

20 µm alu pad

P

assivation

opening

12 µm

Maximum leakage per pixel

100 nA

Integrated Fluence (1000 fb

-1

)

4.4*10

15

n

eq

cm

-2

Integrated Dose (1000 fb

-1

)

2.2 M

G

y(Si

)

17.09.2009

10

ATLAS Pixel UpgradeSlide11

Sensors –

Planar Silicon

A 2x1 MultiChipModule

(MCM) outline is proposedFlat staves are required

slim edges necessary to avoid too much inefficiency

Inactive edges:

1100

m

m in current ATLAS module

(575

m

m guard rings and 420

μ

m

safety margin)

2x1 MCM outline:

< 500

m

m required

< 300 m

m desirableIs an inactive edge of below 500 μm achievable?17.09.200911ATLAS Pixel UpgradeSlide12

3D sensors

Single chip designDifferent vendors and column design under study

Signal, Noise and IV curve of sensors bonded to FE-I3 chips have been studiedActive and slim edges under investigation

Prototypes with IBL specs being/to be produced by 3 manufacturers now

Need to investigate production yield

17.09.2009

12

ATLAS Pixel Upgrade

See talks by C.

da

Via and

O.

RohneSlide13

3D sensor irradiation and test-beam

Irradiation up to 3-5x1015 n/cm

2

Results look promising3D single chips have been in test-beam with magnetic field

17.09.2009

13

ATLAS Pixel UpgradeSlide14

CVD Diamond Sensors

No leakage current increase with radiationLower capacitance: lower threshold, good for in-time efficiencyCan operate at any temperature, no cooling issues

Smaller signal (with poly-crystal CVD)Higher cost but sensors can be “recycled” in case of module defects (rework process developed & tested at IZM)

One vendor established, two under investigation3 full-size 16-FE-I3 chip modules produced

Threshold

~1700e

Noise ~130e

17.09.2009

14

ATLAS Pixel UpgradeSlide15

IBL Sensors and Module

Plan is to use the new upcoming chip with all the sensor kindsChips and sensor assemblies to be testedFE chip (see next slide) could be ready for bump bonding by spring 2010 (first submission to be done)Towards IBL modules for qualification (sensor + FE-chip)2009 : Sensor R&D

All kind of sensors will be done in FE-I4-size nowneed to be ready & tested for bump bonding in spring next year2010 : Build sizable (~10%/tech) number of prototype modules and qualify

Do bench tests, irradiation and testbeam (time-critical)Learn about production problems to expect and estimate production yield

Use modules later to equip “Stave-0” (prototyping for stave assembly and off-detector electronics)

Final Sensor and FE-I4 ready for production start at end 2010.

17.09.2009

15

ATLAS Pixel UpgradeSlide16

New Features & Status FE-I4

New featuresBiggest chip in HEP to date 20.2mm x19mm (pixel matrix: 16.8mm x 20mm, 336x80 pixels)Greater fraction of the footprint devoted to pixel arrayLower power

(=> don't move the hits around unless triggered)Able to take higher hit rate(=> store the hits locally in each pixel and distribute the trigger)

No need for extra module control chip(=> significant digital logic blocks on array periphery)Present Status

Final

integration ongoing

Expect to be ready for tape-out very soon (November 2009)

17.09.2009

16

ATLAS Pixel Upgrade

See talk by M.

BarberoSlide17

Layout

17.09.2009

17

ATLAS Pixel UpgradeSlide18

Bump Bonding of Thin Large Chips

“old style” bump bonding would require chip thickness of 300-350 mm for FEI4-size (chips bow under bonding process)

Started bump-bonding tests with IZM using a carrier wafer:

Tested with 2x2 FEI3: 14x23mm (~88% physical size of FEI4) thinned to 90mm

Results

Chip bow appears acceptable

Bonds good also on edge

Encouraging results for bump-bonding of large area thin chips

Possible Gain could be up to 0.3-0.4% X

0

17.09.2009

18

ATLAS Pixel UpgradeSlide19

17.09.2009ATLAS Pixel Upgrade

IBL Stave

2 Types in consideration

Monostave -> prototyping advanced

Bi-stave -> need to start prototyping

Main challenges

Minimize material (!!!)

Low temperature gradient in stave to allow lower silicon temperature at given cooling temperature

Minimize CTE

Integration of Flex circuit and connections (space limit at stave end)

Flex circuit

Prototype Al/

Kapton

& Mixed Al/Cu

Different design’s in progress

Pre-tested stave structure with integrated bus and cooling,

EoS

and (possibly) internal services

Multi Chip Module(Planar)

Single Chip Modules (3D)

Fully tested 1-chip or multi-chip modules.

Need to understand if assembly requires module flex

Flex Hybrid

Bistave

Monostave

Flex Hybrid

19Slide20

Stave R&D & Cooling

Aim to minimize and unify material (“homogeneous stave”)Staves prototyped are single-stave with CF and Ti PipesIBL cooling Ptotal =1.5kW

Prototyping CO2 and C

3F8 cooling system in cooperation with ATLAS CERN cooling groups and NIKHEFPrototype staves and cooling pipes/heater assemblies ready to start measurements on heat transfer coefficient and thermal performance of stave

Pocofoam

45/135 W/mK

CF Pipe

55deg layup

STYCAST

2850 FT

Laminate

[0/-60/+60]

S2

Cynate Ester

Carbon

fibre

pipe

Less X

0

, match CTE with rest of stave

Titanium pipe

Less temperature gradient in pipe, Smaller pipe ID achievable

Number of cooling pipes: 1 or 2?

redundancy in case of circuit failure

Fittings: Need serious prototyping

17.09.2009

20

ATLAS Pixel UpgradeSlide21

ReadoutThe new layer must be integrated into the Pixel system

Readout must accommodate for the higher occupancy and compatibility with the existing setupConnection will be done opticallyData communication to the module remains at 40 Mb/sData link needs a doubled bandwidth

160 Mb/s link per FE-chip8b/10b encoding protocol

New design of off-detector optical interface is neededOptical interfaces in the detector under investigation Can we use the existing chips?

Which optical components meet the irradiation specs?

ROD: old one or new one is to be discussed still

17.09.2009

21

ATLAS Pixel UpgradeSlide22

Off-detector Optical Interface17.09.2009

ATLAS Pixel Upgrade22

Changed:

Fewer channels (32 → 8)Higher input data rate160Mbit/s

8b/10b encoded

De-multiplexing 1:4

FPGA integration:

fewer discrete components

Improved configuration and testing

Some options …

Fallback solutions for phase alignments

Embedded ROBIN / GE Interface

DCS Monitoring capabilitiesSlide23

IBL assembly flow chart

Sensors

FEI 4

Module

Stave Assembly

Stave loading

CF support + pipe

EOS

Flex

Stave integration to support and BP +

Testing of IBL

(on surface)

IBL and BP Installation in Pit + Installation & Connection to services in the pit

Preparation of off-detector system in USA 15 & CR (DAQ, DCS, ROD, Opto board, PS, Cooling)

Test of services to PP1

Commissioning with Pixel system and ID

Internal Services

EOS-PP1

Bump-Bond

Test & QC

Module WG”

Stave WG”

Integration &

Installation WG”

Off-detector WG”

Beam Pipe

Global Supports

deliverables

“aware”

Test & QC

(elec, opto, thermal)

17.09.2009

23

ATLAS Pixel UpgradeSlide24

Status and OutlookThe IBL project is the upgrade for the ATLAS Pixel detector in LHC phase-1 upgrade

A fourth layer is to be included into the pixel systemRadiation tolerance of electronics and sensors is under investigationMany R&D items have been started in all the components neededAim is to be ready for an installation in 2014

17.09.2009

24

ATLAS Pixel UpgradeSlide25

BACKUP-SlidesSlide26

Expected Fluence

17.09.2009ATLAS Pixel Upgrade

26Slide27

InstallationScenarios for installing the new beam pipe are studied

Constrains on the dosage for the operatorsTime of the operation in-situMaximum individual dose : 2 mSv/over 2months

Maximum individual dose : 6mSv/yearMaximum collective dose : 300mSv/year for

all ATLAS activitiesCable routing and pipe routing under investigationP

ossible

routings have been developed

S

ome

space have been freed already

I

nstall

services as early as possible due to the dosage for the workers

17.09.2009

27

ATLAS Pixel UpgradeSlide28

17.09.2009ATLAS Pixel Upgrade

The beam pipe flange on C-side is too close to the B-layer envelope . It needs to be cut at the level of the aluminum section.

A structural pipe is inserted inside the Beam Pipe and supported at both sides.

The support collar at PP0 C-side is disassembled and extracted with wires at PP1.

Beam pipe is extracted from the A-side and it pulls the wire at PP1

New cable supports are inserted inside PST at PP0.

Brain storming - Extraction/Insertion : Scenario 1

A-side

C-side

28Slide29

17.09.2009ATLAS Pixel Upgrade

Extraction/Insertion : Scenario 1

The new beam pipe with IBL is inserted from A-side.

A-side

C-side

It has 2 supports at PP0 area and 2 floating wall at PP1 on both sides.

The structural pipe is

moved out from the new beam pipe.

29