PPT-EE130/230A Discussion 2

Author : min-jolicoeur | Published Date : 2016-02-23

Peng Zheng Electron and Hole Concentrations Silicon doped with 10 16 cm 3 phosphorus atoms at room temperature T 300 K n N D 10 16 cm 3 p 10 20 10

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EE130/230A Discussion 2: Transcript


Peng Zheng Electron and Hole Concentrations Silicon doped with 10 16 cm 3 phosphorus atoms at room temperature T 300 K n N D 10 16 cm 3 p 10 20 10. 9 1703717052 2012 wwwbiogeosciencesdiscussnet9170372012 doi105194bgd9170372012 57513 Authors 2012 CC Attribution 30 License Biogeosciences Discussions This discussion paper ishas been under review for the journal Biogeosciences BG Please refer to th 1. x. kcd.com. EECS 370 Discussion. Topics Today:. Function Calls. Caller / . Callee. Saved . Registers. Call Stack. Memory Layout. Stack, Heap, Static, Text. Object Files. Symbol and Relocation Tables. How can we nurture discussion about science ideas in outdoor science schools?. “. Talk is not an add-on.... There is solid research and wide-spread agreement that academically productive talk is critical for learning in science.. Electromechanics. 2013. J. Arthur Wagner, Ph.D.. Prof. Emeritus in EE. wagneretal@sbcglobal.net. Fig. 5.1 Magnetic field: Ampere’s Law. Ampere’s Law. Right hand rule. Magnetic intensity H is a . 1. . Ideal education: respect for child’s natural inclinations, interests, and curiosity better than forcing into regimented situation. Regimented classroom forces teacher to teach to lowest common denominator. Will simply happen naturally. . Programming Languages as cars. C. A racing car that goes incredibly fast but breaks down every fifty miles.. C++. A souped-up version of the C racing car with dozens of extra features that only breaks down every 250 miles, but when it does, nobody can figure out what went wrong.. Do’s & Don’ts of Group Discussion. Process of Group Discussion. Preparing for Group Discussion. Evaluation Criteria of Group Discussion. 1. 2. 3. 4. 5. 6. 7. Learning Objectives. What is a Group Discussion. 15. Peng. . Zheng. 1. Early Voltage, . V. A. Output resistance:. A large . V. A. (. i.e.. a large . r. o . ) is desirable. I. B. 3. I. C. V. EC. 0. I. B. 2. I. B. 1. V. A. Punch-Through. E-B and E-B depletion regions in the base touch . “The only true wisdom is in knowing you know nothing.”. Dialogue. In dialogue, one listens to understand, to make meaning, and to find common ground. Dialogue calls for temporarily suspending one’s beliefs. Paul Parboteeah. Loughborough. University. Summary of Papers. “National Synergy on Information Systems…”. Lack of (formal) information sharing agreements. Projects fail, not because of technical issues, but “institutional arrangements”. Peng. . Zheng. 1. Why New Transistor Structures?. Off-state leakage (I. OFF. ) must be suppressed as . L. g. . is scaled down. allows for reductions in V. T. and hence V. DD. . Leakage occurs in the region away from the channel surface. . Zheng. Illumination of a . Semiconductor . with . Light. EE130/230A Fall 2013. (Refer to Discussion 3.). Schottky. . Contact Energy Band Diagrams. :. EE130/230A . Fall 2013. Ideal M-S Contact: . F. Peng. . Zheng. 1. “Game Plan” for . I-V. Derivation. Solve the minority-carrier diffusion equation in each quasi-neutral region to obtain excess minority-carrier profiles. different set of boundary conditions for each region. Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” .

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