PPT-EE130/230A Discussion 2 Peng

Zheng Electron and Hole Concentrations Silicon doped with 10 16 cm 3 phosphorus atoms at room temperature T 300 K n N D 10 16 cm 3 p 10 20 10 16 . Peng. . Zheng. Electron and Hole Concentrations. Silicon doped with 10. 16. cm. -3. phosphorus atoms, at room temperature (. T. = 300 K).. n. = . N. D . = 10. 16. cm. -3. , . p. = 10. 20. /10. Peng. . Zheng. 1. Sample MOSFET I-V . problem-Quiz 5 SP2013. 2. Sample MOSFET I-V . problem-Quiz 5 SP2013. 3. Problem with “Square Law Theory”. Ignores variation in depletion width with distance . Loi. . Krathong. in Chiang Mai. Yee Peng Sky Lantern Festival & . Loi. . Krathong. in Chiang Mai. Yi Peng . (. local name) is part of the festival of lights in Northern Thailand to show respect to Buddha. It's date usually coincides with . 15. Peng. . Zheng. 1. Early Voltage, . V. A. Output resistance:. A large . V. A. (. i.e.. a large . r. o . ) is desirable. I. B. 3. I. C. V. EC. 0. I. B. 2. I. B. 1. V. A. Punch-Through. E-B and E-B depletion regions in the base touch . Members: Philip H. . Peng. Advisor: Dr. Stephen H. Lane. CIS 401, Fall 2011, . University of Pennsylvania. Designing Rhythm Games for Touchscreen Devices. 1. Summary. Project Proposal. Related Work. Project Outline. Peng. . Zheng. Interface Trap Charge, . Q. IT. Traps cause “. sloppy. ” . C. -. V. and also greatly degrade mobility in channel. “Donor-like” traps are. charge-neutral when. filled, positively charged. 6. Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . Peng. . Zheng. 1. Why New Transistor Structures?. Off-state leakage (I. OFF. ) must be suppressed as . L. g. . is scaled down. allows for reductions in V. T. and hence V. DD. . Leakage occurs in the region away from the channel surface. . Zheng. Illumination of a . Semiconductor . with . Light. EE130/230A Fall 2013. (Refer to Discussion 3.). Schottky. . Contact Energy Band Diagrams. :. EE130/230A . Fall 2013. Ideal M-S Contact: . F. Peng. . Zheng. 1. “Game Plan” for . I-V. Derivation. Solve the minority-carrier diffusion equation in each quasi-neutral region to obtain excess minority-carrier profiles. different set of boundary conditions for each region. . relnak. : . Pumh. . hruaitu. Pumh. . khawhnak. . hla. (. Zapi. . dir. ) : No. 198(G). Hramthok. . thlacam. (. Zapi. . dir. ). : Pi Renh Thluai. Bawipa. . thlacam. . (. Zapi. . dir. ) . Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . Slide . 1. Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs). Submission Title:. . [UWB sensing methods and KPIs in . 802.15] . Date Submitted: . []. . Source:. . [. Xiaohui. Slide . 1. Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs). Submission Title:. . The . THz. Channel Model in Wireless Data Center. . Date Submitted: . 10 Match 2015.