PPT-EE130

Electromechanics 2013 J Arthur Wagner PhD Prof Emeritus in EE wagneretalsbcglobalnet Fig 41 Voltagelink system Vd is the voltagelink or dcbus voltage Vd sits between two AC systems. Peng. . Zheng. Electron and Hole Concentrations. Silicon doped with 10. 16. cm. -3. phosphorus atoms, at room temperature (. T. = 300 K).. n. = . N. D . = 10. 16. cm. -3. , . p. = 10. 20. /10. Electromechanics. 2013. J. Arthur Wagner, Ph.D.. Prof. Emeritus in EE. wagneretal@sbcglobal.net. Fig. 4.11 Converter for DC motor (brush-type) drive. A fictitious node is added to create two voltages van and . Peng. . Zheng. 1. Sample MOSFET I-V . problem-Quiz 5 SP2013. 2. Sample MOSFET I-V . problem-Quiz 5 SP2013. 3. Problem with “Square Law Theory”. Ignores variation in depletion width with distance . 1 Spring 2003 Prof. King will not hold office hours this week, but will hold an extra office hour next Mo (2/3) from 11AM-12:30PM Electromechanics. 2013. J. Arthur Wagner, Ph.D.. Prof. Emeritus in EE. wagneretal@sbcglobal.net. Fig. 5.1 Magnetic field: Ampere’s Law. Ampere’s Law. Right hand rule. Magnetic intensity H is a . Electromechanics. 2013. J. Arthur Wagner, Ph.D.. Prof. Emeritus in EE. wagneretal@sbcglobal.net. Fig. 6.1 Electric Machine. Examples to the right?. Examples to the left?. Examples both ways?. Which way is the most common?. 15. Peng. . Zheng. 1. Early Voltage, . V. A. Output resistance:. A large . V. A. (. i.e.. a large . r. o . ) is desirable. I. B. 3. I. C. V. EC. 0. I. B. 2. I. B. 1. V. A. Punch-Through. E-B and E-B depletion regions in the base touch . Peng. . Zheng. Interface Trap Charge, . Q. IT. Traps cause “. sloppy. ” . C. -. V. and also greatly degrade mobility in channel. “Donor-like” traps are. charge-neutral when. filled, positively charged. 6. Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . Peng. . Zheng. 1. Why New Transistor Structures?. Off-state leakage (I. OFF. ) must be suppressed as . L. g. . is scaled down. allows for reductions in V. T. and hence V. DD. . Leakage occurs in the region away from the channel surface. . Zheng. Illumination of a . Semiconductor . with . Light. EE130/230A Fall 2013. (Refer to Discussion 3.). Schottky. . Contact Energy Band Diagrams. :. EE130/230A . Fall 2013. Ideal M-S Contact: . F. Peng. . Zheng. 1. “Game Plan” for . I-V. Derivation. Solve the minority-carrier diffusion equation in each quasi-neutral region to obtain excess minority-carrier profiles. different set of boundary conditions for each region. Peng. . Zheng. Carrier Action under Forward Bias. When a forward bias (. V. A. >0) is applied, the potential barrier to diffusion across the junction is reduced. Minority carriers are “injected” . . Zheng. Electron and Hole Concentrations. Silicon doped with 10. 16. cm. -3. phosphorus atoms, at room temperature (. T. = 300 K).. n. = . N. D . = 10. 16. cm. -3. , . p. = 10. 20. /10. 16 .