Zheng Illumination of a Semiconductor with Light EE130230A Fall 2013 Refer to Discussion 3 Schottky Contact Energy Band Diagrams EE130230A Fall 2013 Ideal MS Contact F ID: 759527
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Slide1
EE130/230A Discussion 4
Peng
Zheng
Slide2Illumination of a
Semiconductor with Light
EE130/230A Fall 2013
(Refer to Discussion 3.)
Slide3Schottky Contact Energy Band Diagrams:
EE130/230A Fall 2013
Slide4Ideal M-S Contact: FM > FS, n-type
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Schottky
Barrier Height
:
EE130/230A Fall 2013
qV
bi
=
F
Bn
– (
Ec – EF)FB
W
n
Slide5Ideal M-S Contact: FM < FS, n-type
EE130/230A Fall 2013
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Slide6Ideal M-S Contact:
FM < FS, p-type
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Schottky
Barrier Height
:
EE130/230A Fall 2013
qV
bi
= FBp– (EF – Ev)FB
W
p-type
semiconductor
F
Bp
Slide7EE130/230A Fall 2013
Ideal M-S Contact: FM > FS, p-type
p-type
semiconductor
Equilibrium band diagram:
Band diagram instantly
after contact formation:
Slide8Summary
E
F
E
c
E
v
E
F
E
c
E
v
E
F
E
v
E
F
E
c
E
v
R.F.
Pierret
,
Semiconductor Fundamentals
, p. 481
EE130/230A Fall 2013
For rectifying contacts:
small-signal capacitance
Slide9Schottky Contact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=0V
EE130/230A Fall 2013
Slide10Schottky Contact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=0V
EE130/230A Fall 2013
W
0.52
μ
m
qV
bi
=
F
Bp
– (
EF – Ev)FB
p-type Si
M
E
v
E
F
E
c
E
o
F
M
=4.77 eV
c
Si
=4.05 eV
0.195
eV
0.4eV=
F
Bp
Slide11Schottky Contact to p-type Silicon with NA = 1016 cm-3 and FBp = 0.4 eV, VA=-0.2V
EE130/230A Fall 2013
Slide12Once Vbi and NA are known, FBp can be determined:
Using
C
-
V
Data to Determine
F
B
EE130/230A Fall 2013
Slide13Good luck to Quiz 1