Ruqayyah Askar PHYS 689 April 27 2018 Outline Introduction General principles Historical overview Types of IR detectors Current IR technologies Parameters of IR Detectors Emerging Technologies ID: 714245
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Slide1
Mid Infrared Detectors
Presentation byRuqayyah AskarPHYS 689 April 27, 2018Slide2
Outline
Introduction
General principles
Historical overview
Types of IR
detectors
Current IR
technologies
Parameters of IR Detectors
Emerging
Technologies
Applications of IR
DetectorsSlide3
Interest in Infrared Spectrum
A.
Rogalski
, Infrared
Detectors, Second
Edition,
Boca Raton: CRC
Press (2010).Slide4
Interest in the Infrared Spectrum
Figure. HITRAN simulation of absorption bands of various molecules in the 3-5 µm spectral region. All species are plotted with identical relative concentration. Spectral overlap limits the choices of interference-free absorption lines.
I
. T.
Sorokina
, K. L.
Vodopyanov
, Appl. Phys. 89, 445-516 (2003
).
Molecules has large absorption cross-sections in the mid-infrared region of the spectrum.Slide5
General Principles
The Electromagnetic SpectrumSlide6
General Principles
The Electromagnetic Spectrum
A.
Rogalski
, Infrared
Detectors, Second
Edition,
Boca Raton: CRC
Press (2010).Slide7
Historical Overview
Initial discovery of infrared radiation by the German astronomer F. W. Herschel in 1800, using thermometers.
The German physicist Th. J.
Seebeck
discovered the first thermocouple in 1821.
Sir Frederick William Herschel (1738-1822)
Thomas Johann
Seebeck (
1770-1831
)Slide8
Historical Overview
In 1829, the Italian physicist L. Nobili constructed the first thermopile, which was modified later by
Melloni
in 1833.
The bolometer follows in 1881 with more sensitivity.
Melloni‘s Thermo-multiplier
(
1833)
S. P. Langley, “The Bolometer," Nature Publishing Group, 14-16
(
1881).
Privat
-Deschanel, "Elementary treatise on natural philosophy," Augustin 1821-1883, 187376 (1873-76).
Langley‘s Bolometer (1881)
Nobili‘s Thermopile, Virtual MuseumSlide9
Historical Overview
In 1873, selenium was used in an experiment by an English electrical engineer W. Smith, after he discovered the photoconductive effect.
Case developed the first IR photoconductor in 1917 with high responsivity.
Willoughby
SmithSlide10
Historical Overview
Cs-O-Ag phototube appeared in 1930.
No further development until about 1940.
Lead Sulfide (
PdS
) was discovered as a photoconductive with response up to 3 µm by
Kutzscher
in Germany.
First practical IR detector is based on
PbS
.
Cashman showed that the lead salt family (
PbSe
and
PbTe
) has the promise as IR detectors.Slide11
Historical Overview
Lead Sulfide (
PdS
) photoconductors manufactured in Germany in about 1943, and produced in the US and England (1944, 1945).
After discovery of transistor in the early 1950s, the first extrinsic photoconductive detectors were developed.
Advances in narrow bandgap semiconductors for more sensitivity.
III-V compound semiconductor family was discovered.
InSb
was the first material.
The development of mercury-cadmium-telluride (HgCdTe) in 1959 by Lawson and co-workers.Slide12
Historical Overview
P
hotolithography was available in
the early
1960s, and was applied to make IR detector arrays.
In 1967, first paper on extrinsic Si detector was published by
Soref
.
Extrinsic Si was considered after Boyle and Smith invented the charge-coupled devices ( CCDs).
In the 1980s, the second generation of HgCdTe infrared systems was developed with low power dissipation.
A.
Rogalski
, Infrared
Detectors, Second
Edition,
Boca Raton: CRC
Press (2010).Slide13
Types of IR Detectors
The two main types of IR detectors:
Thermal detectors:
- Operate based on detecting thermal effects of incident
IR radiation.
- Low coat and low performance.
Photonic detectors:
- Incident IR radiation causes intrinsic or extrinsic
electronic excitations.
- High cost and high performance
Infrared Thermometer - MLX90614
PDA20H
PbSe
Detector 1.5-4.8 µm Slide14
Current IR Technologies
Currently, high performance IR technologies are mainly based on
-
Grown structures of small bandgap mercury-cadmium-
telluride ( MCT )
- Indium-
antimonide
(
InSb
)
- GaAs based quantum well infrared photoconductors (QWIPs
)
The material is chosen based on the application and the wavelength.Slide15
Current IR Technologies
The
e
nergy band diagram of MCT and QWIP showing electronic transitions.
A. Karim
and
J. Y.
Andersson
, IOP
Conf.
Ser
,
Mater. Sci. Eng.
51, 012001 (2013)Slide16
Parameters of IR Detectors
Responsitivity
(R).
Noise equivalent power (NEP).
Detectivity
(D).Slide17
Emerging Technologies
The demand is for lower cost high performance detectors.
Some of the emerging technologies include:
- Quantum dot infrared photodetectors (QDIPs)
- Type-II strained layer super-lattice.
- QDIPs with type-II band alignment.Slide18
Emerging Technologies
C. Tan and H.
Mohseni
,
Nanophotonics
7(1
), 169-197 (2017).
Figure:
Comparison
of the
detectivity
of various available detectors when operated at the indicated temperature.Slide19
Emerging Technologies
Table:
Summary of the advantages and the disadvantages of the current nanostructure-enhanced IR photodetectors.
C. Tan and H.
Mohseni
,
Nanophotonics
7(1
), 169-197 (2017).Slide20
Emerging Technologies
I
nterferometric
autocorrelation setup
in our laboratory.
Michelson Interferometer-based technologiesSlide21
Emerging Technologies
a) Time domain of dual comb spectroscopy, b) Frequency domain of dual comb
spectroscopy
.
A.
Schliesser
, N.
Picqué
, T. W.
Hänsch
, Nature Photonics 6, 440-449 (2012).
Dual comb Infrared Laser Spectroscopy Slide22
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