PDF-1Embedded Flash memory versus EEPROM: main differences . . . . . . . 5

ContentsAN2594 216Doc ID 13718 Rev 3 AN2594List of tables Doc ID 13718 Rev 3316List of tablesTable 1Differences between embedded Flash memory and EEPROM . Caching Compiler Choices int x32512 forj 0 j 512 j fori 0 i 32 i xij 2xij1 int x32512 fori 0 i 32 i forj 0 j 512 j xij 2xij1 brPage 14br Caches and Consistency IO using caches Interferes with CPU may throw useful blocks IO using main m 1 Name two differences between logical and physical addresses Answer A logical address does not refer to an actual existing address rather it refers to an abstract address in an abstract address space Con trast this with a physical address that refer Qing Xu. Tie Chen. Flash. An electronic device. Non-volatile. Can be electrically erased and reprogrammed. Usage:. Digital Music Device. Smartphones. Digital Cameras. Removable Storage Devices. (picpedia.com). File . system organisation issues. Nick Gaens. Introduction. Technologies. How does it work?. Limitations. File systems: problems and workarounds. Outline. Flash . memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. Embedded Systems . Chanik. Park, . Jaeyu. . Seo. , . Dongyoung. . Seo. , . Shinhan. Kim and . Bumsoo. Kim . Software Center, SAMSUNG Electronics, Co., Ltd. . Proceedings of the 21st International Conference on Computer . High-Performance Key-Value Store. Hyeontaek. Lim. , Bin Fan, David G. Andersen. Michael . Kaminsky. †. Carnegie Mellon University. †Intel Labs. 2011-10-24. Key-Value Store. 2. Clients. PUT(key, value). Done By: . Bashayer. Al- . Suroor. ID: 200800649. Outline:. Introduction to How Flash Memory Works. A sample list of USB . devices. USB . Interface. Flash Memory: Tunneling and Erasing. How simple is the flash memory. Reprogrammable program Flash memory has the size of . 8K . x 16 bits (16KByte) by . ATmega16. . It has an endurance of at least 10,000 write/erase cycles. . Program Counter (PC) is . 13 . bit . . wide, thus it is capable of addressing the entire Program memory locations.. Explain the limitations of flash memory.. Define wear leveling.. Define the term IO Transaction. Define the terms synchronous bus and asynchronous interconnect.. Explain the difference between polling and interrupts. Functions. Yinglei. Wang, Wing-. kei. Yu, . Shuo. Wu, Greg . Malysa. , . G. Edward . Suh. , and Edwin C. . Kan. Cornell University. May 21. st. , . 2012. Outline. Motivation. Flash memory basics. Device fingerprinting. Radboud University Nijmegen. Applications of smartcards & RFID tags . 2. “Payment”. “ID”. . . . . Exit smart cards?. mDL. . (mobile Driving License). mobile payments. This may use . Conceptual Roadmap. PN junction. MOSFET. Flash Cell. Flash Blocks. Modern Devices. Put n-channels in p-substrate:. . drain (D), Source (S), Gate(G). Add a floating gate. Put a bunch together in NAND or NOR configuration. Prof. Onur Mutlu. Carnegie Mellon University. Emerging Memory Technologies Lectures. These slides are . from the . Scalable . Memory Systems. course . taught at . ACACES . 2013 (July 15-19, 2013). Course Website:. Qiuping Wang. *. , . Jinhong. Li. *. , Wen Xia. #. Erik . Kruus. ^. , . Biplob. Debnath. ^. , Patrick P. C. Lee. *. *. The Chinese University of Hong Kong (CUHK). #. Harbin Institute of Technology, Shenzhen.