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New RF design of CLIC DB AS New RF design of CLIC DB AS

New RF design of CLIC DB AS - PowerPoint Presentation

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New RF design of CLIC DB AS - PPT Presentation

Alexej Grudiev BERF Acknoledgements Rolf for useful information about present design R Wegner and E JensenCLICnote945 2012 Present CDR design Present CDR design Full beam loading in linear vg tapered structure ID: 409344

odd spokes structure dzspoke spokes odd dzspoke structure beam tfill 15mm cell time eta 15mw loading full const efficiency design fill gradient

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Slide1

New RF design of CLIC DB AS

Alexej Grudiev, BE-RFSlide2

Acknoledgements

Rolf for useful information about present design (R. Wegner and E. Jensen,CLIC-note-945, 2012)Slide3

Present CDR designSlide4

Present CDR designSlide5

Full beam loading in linear vg tapered structure

Q

0

=

const

, R’=

const

but v

g = vg0(1+az)

Full beam loading condition for a≠-2

α

:

Efficiency in steady-state: Slide6

Full beam loading in Constant impedance TWS

Efficiency in steady-state:

Full beam loading condition:

In order to maximum efficiency means maximum relative beam loading parameter at the full beam loading condition: => Maximum

R’*vg*Q0 Slide7

Transfer function Pin -> V

i.e. PRST-AB

14

, 052001 (2011)

Const

impedance (CI):

-

Transfer function from the input gradient G0~sqrt(Pin) to voltage V

Linear tapered vg:

In addition, there is time of flight effect.

t_flight

~ 3-6 ns for 1-2 m long structure

t_f

’ =>

t_fill

-

t_flight

in FWS and

t_f

=>

t_fill

+

t_flight

in BWS

BWS enhance filtering effect of accelerating structureSlide8

Optimization of the 4-spoke cell: 120 degree, a=30mm

dzSpoke

=10mm; even spokes

Odd spokes

even spokes

dzSpoke

=10mm; odd spokes

eta2=R’*vg*Q0

dzSpoke

=15mm; even spokes

dzSpoke

=h-gap~27mm; even spokes

dzSpoke

=15mm; odd spokes;

P0=15MW ->

eta = 98.6

%;

Ls

= 2.8m;

tfill

=102ns; G0=2.5MV/m

RRSpWall

20mm

25mmSlide9

Optimization of the 4-spoke cell:

150

degree

dzSpoke

=15mm; odd spokes

dzSpoke

=25mm; odd spokesSlide10

Optimization of the 4-spoke cell: 9

0

degree

dzSpoke

=10mm; odd spokesSlide11

Optimization of the 4-spoke cell, odd spokes:

120 degree, a = 25mm

Odd spokes

dzSpoke

=15mm;

dxSpoke

=30mm ;

dRdt

=10mm

;

odd spokes;

P0=15MW -> eta = 98.7%; Ls

= 2.5m; tfill=102ns; G0=2.83MV/m

dzSpoke

=15mm;

dxSpoke

=40mm ;

dRdt

=10mm

;

odd spokes;

dzSpoke

=15mm;

dxSpoke

=30mm;

dRdt

=12mm; odd spokes; Slide12

Optimization of the 4-spoke cell, odd spokes:

120 degree, a = 20mm

Odd spokes

dzSpoke

=15mm;; odd spokes;

P0=15MW -> eta = 98.7

%;

Ls

= 2.34m;

tfill

=99ns; G0=3MV/m

dzSpoke

=19mm;; odd spokes; Slide13

Cell and CI structure parameters summary table

dphi

[

deg

]

a [mm]

Q

R’/Q [

Ω

/m]

vg/c [%]η_CI[%], @15MW

Ls [m]t_fill [ns]

12030145651846

9.2398.62.8102

15030157221581

4.59

90

30

13790

1088

~0

120

25

15602

2085

8.18

98.7

2.5

102

120

20

15821

2300

7.9

98.7

2.34

99

This can be improved by changing the cell shape.Slide14

Geometry of the BWSSlide15

Tapering vg

Structure with

a=30mm;

R

’/Q0 = 1846 Ohm/m; Q0 = 14565

P0=15MW; => G0=2.5MV/m

Const

Imp.; vg/c = 9.23%; solid lines

eta = 98.6

%; Ls = 2.8m; tfill=102ns; Linear vg/c from 9.23% to

2.9%. Dash lineseta = 98.4%; Ls = 2.2m; tfill=134ns; Const Imp.; vg/c =

5.6%; dash-dotted lineseta = 98.1%; Ls = 2.2m;

tfill=131ns; Slide16

Making filling time 245 ns

Structure with

a=30mm;

R

’/Q0 = 1846 Ohm/m; Q0 = 14565

P0=15MW; =>

Const

Imp.; vg/c = 1.54%; solid lines

eta = 96.5

%; G0=6.1MV/mLs = 1.13m; tfill=246ns; Linear vg/c from 2.6% to 0.908%. Dash lines

eta = 97.0%; Ls = 1.18m; tfill=244ns; Slide17

Material: why not Aluminium

CLIC DB Acc. Structure

with a=30mm;

vg/c = 9.23%; R

’/Q0 = 1846 Ohm/m;

Q0Cu

= 14565

P0=15MW; => G0=2.5MV/m

Influence of conductivity on efficiency:

conductivity

= 100 %IACS (Cu)

-> eta = 98.6%conductivity = 60 %IACS (Al) -> eta = 98.1%

conductivity = 40 %IACS (6061-T6) -> eta = 97.7%

Issues: Multipactor due to high secondary emission yield of Al. More studies are needed to address this issue both simulations and high power testing.RF and vacuum wise tight assembly. Prototyping is necessary.

Material used: Al 6082-T6, conductivity: 35MS/m = 60%IACSSlide18

Advantages of high vg BWS

High

Rf

-to-Beam efficiency 99%

High group velocity -> less tolerance -> no tuning -> lower cost

V

ariation of group velocity by magnetic coupling hole size is independent on the aperture radius -> max(R’) and max(vg) at the same timeSlide19

Questions

Aperture: the smaller the better for RF, lower limit comes from beam dynamics. Is a=30 mm acceptable? Avni is looking into it.

Filling time

t_fill

? How critical is to have factor 10 noise reduction at f=1/

t_fill

=4MHz ? Is factor 2 or 4 instead acceptable?

Const

impedance versus tapered?

Tapering can be done but , for the same filling time, it will reduce the lowest vg -> tighter tolerancesIncrease nose level at f_n=n/

t_fillArgument for the tapering aredetuning of the HOMs but with the bunch spacing of 2 buckets it has small effect. We must rely on the strong damping anyway.IF higher average gradient od longer filling time is needed reduction of vg linearly along the structure provides slightly higher efficiency compared to overall reduction of vg in CI structure

Gradient? The higher is the gradient the lower is the linac cost per MV, IF real estate gradient is limited by the structure and not by the RF power source layout. It seems that 2 times shorter DB linac still can be done by rearranging the RF power sources along the

linac. To be discussed…Slide20

Next steps

Minimum aperture limit to be defined by our beam dynamics experts

For this minimum aperture a detailed RF design to be done to maximize vg, R’ and Q0

If higher gradient needed vg can be tapered down or/and reduced

Design HOM damping (same type as for CDR)

If Aluminium then

Multipactor

studies which is probably main limitation for Al cavity

Prototypes of a few cells for fabrication/assembly studies

Full or half length prototype to be tested at a L-band test facility