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Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization

Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization - PDF document

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Uploaded On 2015-01-15

Lowresistance and thermally stable ohmic contact on type GaN using Pd Ni metallization - PPT Presentation

Speci731c contact resistance as low as 57 10 cm was obtained from the Pd 30 Ni 70 contact annealed at 500 C under an oxidizing ambient NiO that formed at the surface prevented Pd atoms from outdiffusing promoting the formation of Pd gallides Ga Pd ID: 31528

Speci731c contact resistance

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