84K - views

target substrate SiO SiH o CVD is used to form SiO layers that are much thicker in relativel y very short times than thermal oxides

can be deposited from reacting silane and oxyge n in LPCVD reactor at 300 to 500C where can also be LPCVD deposited by decomposing dichlorosilane HCl SiO SiCl 900 57471o can be LPCVD or PECVD process In the LPCVD process dichlorosilane a nd ammonia

Tags : can deposited from
Embed :
Pdf Download Link

Download Pdf - The PPT/PDF document "target substrate SiO SiH o CVD is us..." is the property of its rightful owner. Permission is granted to download and print the materials on this web site for personal, non-commercial use only, and to display it on your personal computer provided you do not modify the materials and that you retain all copyright notices contained in the materials. By downloading content from our website, you accept the terms of this agreement.

target substrate SiO SiH o CVD is used to form SiO layers that are much thicker in relativel y very short times than thermal oxides






Presentation on theme: "target substrate SiO SiH o CVD is used to form SiO layers that are much thicker in relativel y very short times than thermal oxides"— Presentation transcript:

pdf