can be deposited from reacting silane and oxyge n in LPCVD reactor at 300 to 500C where can also be LPCVD deposited by decomposing dichlorosilane HCl SiO SiCl 900 57471o can be LPCVD or PECVD process In the LPCVD process dichlorosilane a nd ammonia ID: 25729
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