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Exploiting commercial CMOS technologies for: Exploiting commercial CMOS technologies for:

Exploiting commercial CMOS technologies for: - PowerPoint Presentation

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Exploiting commercial CMOS technologies for: - PPT Presentation

detection of Minimum Ionizing Particles for High Energy Physics experiments direct detection of Xrays for medical applications People PG GROUP Research Staff D Passeri 21 P Placidi ID: 499196

pixel perugia univ infn perugia pixel infn univ italy ions facilities protons partners design sez lns advanced radiation umc

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Slide1

Exploiting commercial CMOS technologies for:detection of Minimum Ionizing Particles for High Energy Physics experimentsdirect detection of X-rays for medical applicationsPeople:

PG- GROUP

Research

Staff: D. Passeri(2,1), P. Placidi(2,1), L. Servoli(1) , M. Menichelli(1) , G.M. Bilei(1) Felloship: L. Bissi(2,1)Students

Istituto Nazionale di Fisica Nucleare

Sezione di

Perugia

(2) Dipartimento di Ingegneria Elettronica e dell’Informazione

Università

degli Studi di PerugiaSlide2

Activity (1)2

Visible Light

a

particleDV = 360 mV

Radiation

A

ctive P

ixel

S

ensors

Geant

4

Synopsys Advanced TCAD ->Cadence

Slide3

Activity (2)3

13 years

of experience in radiation damage

due to the collaboration with the AMS experiment and private companiesSlide4

Projects (custom design)4

2001 – 2004: Radiation

Active Pixel Sensors (RAPS) Partners:

Univ. of Perugia, Univ. of Parma e INFN di Perugia 2005 – 2008: Self-resetting High-gain Active Radiation Pixel Sensor (SHARPS) Partners: Univ. of Perugia, Univ

. of Parma e INFN di Perugia

2009 – 2011:

VERTICAL SCALE INTEGRATION – PIXEL CMOS (VIPIX)

Partners: SLIM5 – PI, PV, BG, BO, TO / DIGIMAPS – RM3

/ SHARPS PG-PR

2009 – 2011:

To_ASIC

Partners

: (

INFN-Sez

. di Catania,

INFN-Sez

. di Cagliari,

INFN-Sez

. di Perugia,

Univ

.

of

Perugia,

Univ

.

of

Parma)

Slide5

RAPS02UMC 0.18m 1P6M CMOS3T architecture 4x4μ

m2, 10x10μ

m2 pixel sizesparse read-out pronein-pixel high-gain

self-reset mode (event-triggered).RAPS02RAPS03APS

WIPS

SHARPS

RAPS03

256x256 pixels

10x10

μ

m

2

pixel size

~5mm

~5mm

Background …..

5Slide6

6…. we’re working on

UMC 180nm

UMC 90nm

~15mm1) What we have …. ……

and what we would like to have!

Chartered

130nm

~

15mm

Outputs

Global signals

2)

looking

forward

deep

submicron

technology

UMC 180nm

Chartered

130nmSlide7

7Facilities (1)

Software EquipmentCadence Combined IC and Systems Package, Calibre

, MultiSim, Synopsys Advanced TCAD, ISE- Foundation (Xilinx)

Technological Facilities Optical benchdifferent laser headslaser spot characterization: photon rate, intensity, focusing capability (~ 1-2μm, single pixel hit)advanced movement and DAQ capabilities: micropositioningGUI: calibration, remote data acquisition , analysis (single pixel response, surface mapping, cross-talk

OPTICAL FIBER

COLLIMATOR

OBJECTIVE

3D TRANSLATORS

CHIP

X

Z

YSlide8

8Facilities (2)

Test Board Design (Servizio

Elettronica INFN Perugia)PCB design and assembly

Firmware design capabilities (FPGA and Programmable device)Slide9

9Facilities (3)

Total dose

tests Co60 gamma raysENEA Casaccia (

Rome-Italy)Taek SANAEM (Ankara-Turkey)GIF UCL (Louvain-la neuve- Belgium)X-raysX-ray tube in SERMS (Terni-Italy)SEE test with ions and protonsIons and protonsINFN LNS Catania (Italy) (ions and protons)

GSI (Darmstadt- Germany

) (ions

)HIF UCL (

Louvain-la neuve-

Belgium

) (

ions

)

Laser

MAPRAD (Perugia)

Italy

Displacement

Damage

INFN LNS Catania (Italy) (

protons

)Slide10

10Facilities (4)

Laser for SEE testing at MAPRad

SEE testing flux measurement setup at LNS

Cobalt source in Casaccia Rome