PPT-A CMOS Active Pixel Sensor for

high resolution imaging of the Jovian system Matthew Soman Andrew D Holland Konstantin D Stefanov Jason P Gow Mark Leese Centre for Electronic Imaging The Open University MK7 6AA . Tony Affolder. University of Liverpool. LOI Costings. The core costings of the strips for the LOI was done in three parts:. In my spread sheet, I was able to cost:. All components of the stave/petals and off-detector power supplies (LV and HV). Meeting on . D. Bortoletto, Purdue University & University of Oxford. D. Bortoletto, May 20, 2014. CMS Tracker Meeting. 1. Bump bonding for hybrid pixels remain a dominant cost for hybrid detector. The cost for. (Depleted CMOS Pixel Sensors). Tomasz Hemperek. hemperek@uni-bonn.de. ACES 2016 - 09.03.2016. Hybrid Pixel Detectors. Monolithic Pixels. . Depleted Monolithic Pixels. 2. Introduction. hemperek@uni-bonn.de. Richard Bates & . Dima. . Maneuski. Contents. Motivation for hybrid CMOS. Assembly. 10/03/16. R. Bates. 2. CMOS designs. Depleted Monolithic Active Pixel Sensor. HR-material (charge collection by drift). for ATLAS Upgrade. Dima Maneuski et. al.. https. ://indico.cern.ch/event/640107/. Presentation . plan. Presentation Plan. Motivation for the ATLAS . ITk. Performance requirements. CMOS options. CMOS technologies. Tomasz Hemperek. hemperek@uni-bonn.de. AIDA-2020 - Marseille - 13.05.2016. High Luminosity LHC Environment - Requirements. hemperek@uni-bonn.de. AIDA-2020 - Marseille - 13.05.2016. ATLAS Phase II Letter of Intent. H. . Pernegger. . ~2 cm. ~2 . c. m. FE-I4 R/O Chip. 27 k Pixels. 87 M transistors. The LHC upgrade program. From now to HL-LHC:. 4/27/12. 2. IBL + . nSQP. if confirmed. New pixel and strip. The ATLAS Tracker upgrade. WP . Coordinators. : Christophe de la Taille, Valerio . Re. Goal : . provide. chips and interconnections to detectors . developed. by . other. . WPs. Task. 1: . Scientific. coordination . (CNRS-OMEGA, INFN-UNIBG). A novel pixel and image sensor for automotive applications is present. By combining process advancements from consumer application with automotive technology and design, the optimal high dynamic range R Fig. 1. System diagram of the sensor instrumentation SoC brought to you by CORE View metadata, citation and similar papers at core.ac.uk provided by Lirias � Jens Verbeeck, et al., A MGy R Serena Mattiazzo. INFN & University of Padova (Italy). M. . Battaglia. ,. UC Santa Cruz (USA). P. . Denes. , D. . Contarato. Lawrence Berkeley National Laboratory, LBNL (USA). D. . Bisello. , P. . 1. Planar CMOS. process is used up to the 28 nm technology node. . For later technology nodes, 3D CMOS MOSFETs (. FinFETs. ) are used. . Planar CMOS processes are still extensively used for . analog. Y. Kwon. i. n exploration . with . J. Lajoie, E. Kistenev, A. Sukhanov, and Z. Li. as part of MPC-EX R&D. Si sensor in general. M. ature technology. Reliable performance. Fine granule . Higher energy and time resolution (than gaseous ionization detectors) . Fraunhofer. IMS. Dr. Sascha Weyers. Fraunhofer IMS. Infrastructure – CMOS . Fab. Total . a. rea: 1300 m. 2. Clean room . c. lass: 10. Wafer size: 200 mm (8 inch; 0.35 µm). Staff: working in 4 shifts / 7 days a week .