PPT-Read Disturb Errors in MLC NAND Flash Memory:

Author : conchita-marotz | Published Date : 2019-06-21

Characterization Mitigation and Recovery Yu Cai Yixin Luo Saugata Ghose Erich F Haratsch Ken Mai Onur Mutlu Carnegie Mellon University Seagate Technology

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Read Disturb Errors in MLC NAND Flash Memory:: Transcript


Characterization Mitigation and Recovery Yu Cai Yixin Luo Saugata Ghose Erich F Haratsch Ken Mai Onur Mutlu Carnegie Mellon University Seagate Technology Executive Summary. File . system organisation issues. Nick Gaens. Introduction. Technologies. How does it work?. Limitations. File systems: problems and workarounds. Outline. Flash . memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. . Yaakobi. , Laura . Grupp. . Steven Swanson, Paul H. Siegel, and Jack K. Wolf. Flash Memory Summit, August 2010. University of California San Diego. Efficient Coding Schemes for Flash Memories. Outline. Embedded Systems . Chanik. Park, . Jaeyu. . Seo. , . Dongyoung. . Seo. , . Shinhan. Kim and . Bumsoo. Kim . Software Center, SAMSUNG Electronics, Co., Ltd. . Proceedings of the 21st International Conference on Computer . in MLC NAND Flash Memory:. Characterization, Mitigation, and Recovery. Yu . Cai. , . Yixin Luo. , Saugata Ghose, . Erich F. . Haratsch. *, Ken Mai, Onur Mutlu. Carnegie Mellon University, *Seagate Technology. SIGMETRICS. ’14. Summary. Problem. : as P/E cycle increases, raw BER significantly increases beyond the fixed ECC capability. Goal. : this paper tries to extend lifetime by reducing # of bit errors in a page (to the extent which ECC can fix). Experimental Analysis, Exploits, and Mitigation Techniques. HPCA Session 3A – Monday, 3:15 . pm. , Salon F. 128GB. NAND . Flash. 256GB. NAND Flash. NAND flash scaling: . shrink size. . of each . flash cell, . Done By: . Bashayer. Al- . Suroor. ID: 200800649. Outline:. Introduction to How Flash Memory Works. A sample list of USB . devices. USB . Interface. Flash Memory: Tunneling and Erasing. How simple is the flash memory. Memory: Characterization. , Optimization, and . Recovery. Yixin Luo. yixinluo@cmu.edu. (joint work with Yu Cai, . Erich . F. Haratsch, Ken Mai, Onur Mutlu). 1. Presented in the best paper session at HPCA 2015. Flash Memory Programming:. Experimental Analysis, Exploits,. and Mitigation Techniques. Yu Cai, . Saugata Ghose. , Yixin Luo,. Ken Mai, Onur Mutlu, Erich F. . Haratsch. February 6, 2017. Executive Summary. Characterization, Mitigation, and Recovery. Yu . Cai. , . Yixin Luo. , Saugata Ghose, . Erich F. . Haratsch. *, Ken Mai, Onur Mutlu. Carnegie Mellon University, *Seagate Technology. Executive Summary. Exploiting Self-Recovery and Temperature Awareness. Yixin Luo. Saugata Ghose Yu Cai Erich F. Haratsch Onur Mutlu. HeatWatch. Storage Technology Drivers - 2018. 2. Store . large amounts . Memory: Characterization. , Optimization, and . Recovery. Yu Cai, . Yixin Luo. , . Erich . F. . Haratsch*,. Ken . Mai, Onur . Mutlu. Carnegie Mellon University, *LSI Corporation. 1. You Probably Know. Vinod Ganapathy . Material drawn from the OSTEP book. 1. What are flash chips, aka SSDs?. Flash chips are designed to store one or more bits in a single transistor. single-level cell (SLC) flash, only a single bit is stored within a transistor (i.e., 1 or 0). Prof. Onur Mutlu. Carnegie Mellon University. Emerging Memory Technologies Lectures. These slides are . from the . Scalable . Memory Systems. course . taught at . ACACES . 2013 (July 15-19, 2013). Course Website:.

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