PPT-Neighbor-Cell Assisted Error Correction for MLC NAND Flash

Author : marina-yarberry | Published Date : 2017-03-16

SIGMETRICS 14 Summary Problem as PE cycle increases raw BER significantly increases beyond the fixed ECC capability Goal this paper tries to extend lifetime by

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Neighbor-Cell Assisted Error Correction for MLC NAND Flash: Transcript

SIGMETRICS 14 Summary Problem as PE cycle increases raw BER significantly increases beyond the fixed ECC capability Goal this paper tries to extend lifetime by reducing of bit errors in a page to the extent which ECC can fix. @ Micron.com. Flash Memory Technology Direction . Jim Cooke. Director of Applications Engineering. Memory Products Group. Micron Technology, Inc.. Agenda . Mass Storage . HDD, HHD, SSD. How Flash can Benefit Drives. Contact Information. Wesley Brown. wes@planetarydb.com. Twitter @. WesBrownSQL. Blog . http://www.sqlserverio.com. Today’s Topic Covers…. NAND Flash Structure. MLC and SLC Compared. NAND Flash Read Properties. Flash Serial NOR Flash SLC NAND Flash Spansion FLASH. Yaakov (J) Stein. Types of Memory. By memory we mean any device that stores bits of information. Volatile memory. requires voltage (. and perhaps refresh. ) to maintained information. most frequently used for RAM. HighThroughput. Datasets. Dale Beach, Longwood University. Lisa . Scheifele. , Loyola University Maryland. Next-generation sequencing has revolutionized both biological research and clinical medicine, with sequencing of entire human genomes being used to predict drug responsiveness and to diagnose disease (for example Choi 2009). . Embedded Systems . Chanik. Park, . Jaeyu. . Seo. , . Dongyoung. . Seo. , . Shinhan. Kim and . Bumsoo. Kim . Software Center, SAMSUNG Electronics, Co., Ltd. . Proceedings of the 21st International Conference on Computer . Experimental Analysis, Exploits, and Mitigation Techniques. HPCA Session 3A – Monday, 3:15 . pm. , Salon F. 128GB. NAND . Flash. 256GB. NAND Flash. NAND flash scaling: . shrink size. . of each . flash cell, . (and Security) Issues of DRAM and NAND Flash Scaling. Onur Mutlu. omutlu@gmail.com. http://users.ece.cmu.edu/~omutlu. /. HPCA Memory . R. eliability Workshop. March 13, 2016. Limits of Charge Memory. Chip-Off Forensic Analysis. of NAND Flash Memory Devices. Aya. . Fukami. , . Saugata. . Ghose. , . Yixin. . Luo, . Yu . Cai. , . Onur. . Mutlu. 1. Brief Summary of the Paper. Our Goal. : . Identify . Memory: Characterization. , Optimization, and . Recovery. Yixin Luo. yixinluo@cmu.edu. (joint work with Yu Cai, . Erich . F. Haratsch, Ken Mai, Onur Mutlu). 1. Presented in the best paper session at HPCA 2015. Flash Memory Programming:. Experimental Analysis, Exploits,. and Mitigation Techniques. Yu Cai, . Saugata Ghose. , Yixin Luo,. Ken Mai, Onur Mutlu, Erich F. . Haratsch. February 6, 2017. Executive Summary. Exploiting Self-Recovery and Temperature Awareness. Yixin Luo. Saugata Ghose Yu Cai Erich F. Haratsch Onur Mutlu. HeatWatch. Storage Technology Drivers - 2018. 2. Store . large amounts . Thesis Oral. Yixin Luo. Committee:. Onur Mutlu (Chair) . Phillip B. Gibbons. James C. Hoe. Erich F. Haratsch, Seagate. Yu Cai, SK Hynix. Presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy. Jim Cooke. Director of Applications Engineering. Memory Products Group. Micron Technology, Inc.. Agenda . Mass Storage . HDD, HHD, SSD. How Flash can Benefit Drives. Hybrid, . ReadyBoost. , Robson, SSD.

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