PPT-Electron-beam lithography

with the Raith EBPG Part 1 Introduction M Rooks Yale University The EBPG has a long history stretching back to the 1960s This particular ebeam system was first built by Philips in the Netherlands then was bought out by Cambridge Instruments UK which morphed into Leica Lithography spun off as . Yue Hao. Collider-Accelerator Department. Brookhaven National Laboratory. Jan 10, 2009 EIC Meeting at Stony Brook. Outline. Beam-beam effect on the Electron beam. Beam distribution disruption. Mismatch with the design lattice. NANO 101. Introduction to Nanotechnology. 1. 2. Lithography. Photolithography. Electron beam lithography. X-ray lithography. Focused ion beam lithography. “Photoengraving”. Transfer pattern into reactive polymer film (“resist”). with the . Raith. EBPG. Part 3: Hardware. M. Rooks, Yale University. EBPG 5000 System Hardware. 100 kV accelerating potential electrons of course. 20 bit main field DAC Digital to Analog Converter*. Ziam Ghaznavi. CHE 384T Lithography. November 30. th. , 2017. 1. Outline/Agenda. Motivation. Ion – Solid Interactions. Overview of IBL Systems . Future Outlook. 2. Motivation. SEMATECH and the ITRS. Ion source and optics.. Ion-solid interaction, damage.. Scanning ion beam imaging.. FIB lithography using resist.. FIB milling, sputtering yield.. Redeposition.. Single line milling.. Other types of FIB lithographies (implantation, intermixing…).. L.J.Mao. (IMP), . H.Zhang. (. Jlab. ). On behalf of colleagues from . Jlab. , BINP . and . IMP. Motivation. . HIRFL-CSR facility. . Cooling Experiments @ HIRFL-CSR. . Simulation works. with the . Raith. EBPG. Part . 2: Choosing parameters. M. Rooks, Yale University. Choosing e-beam exposure parameters. Step 1: choose the resist and choose the resist thickness. Typical choices:. . Overview and resolution limit.. Electron source (thermionic and field emission).. Electron optics (electrostatic and magnetic lens).. Aberrations (spherical, chromatic, diffraction, astigmation).. EBL systems (raster/vector scan, round/shaped beam). Intra-beam . Scattering. Mauro Pivi, MedAustron - work made while at SLAC -. i. n . collaboration. with: T. . Demma. (Frascati & LAL), the ILC / CLIC and . Electron Beam Lithography System - ELF 10000 Electron Beam Lithography System HS50 Harvard’s Center for Nanoscale Systems(CNS) will install North America’s first High Speed Elionix ELS-HS50 electron beam lithography system. This will be the third Elionix electron beam lithography system installed into the Harvard CNS cleanroom. Nanoscale fabrication techniques have taken device, systems and material design to a new level. Electron Beam Lithography (EBL) enables the creation of highly accurate nanoscale structures. Andrzej G. . Chmielewski. Institute of Nuclear Chemistry and Technology. Warsaw, Poland. ARIES Meets Industry - accelerator application to the ship exhaust gases treatment. 1 Dec 2017,. TANGO 2. Flue gas electron beam irradiation.