PPT-Combating Bit Errors From Stuck Cells in Flash Memory
Author : sherrill-nordquist | Published Date : 2018-10-06
Using Novel Information Theory Techniques Ravi Motwani Zion Kwok Poovaiah Palangappa NVMW 2018 Outline Problem Stuck cells are bad for LDPC codes Readtime solutions
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Combating Bit Errors From Stuck Cells in Flash Memory: Transcript
Using Novel Information Theory Techniques Ravi Motwani Zion Kwok Poovaiah Palangappa NVMW 2018 Outline Problem Stuck cells are bad for LDPC codes Readtime solutions are bad for QoS Solution. Avg Access Time 2 Tokens Number of Controllers Average Access Time clock cyles brPage 16br Number of Tokens vs Avg Access Time 9 Controllers Number of Tokens Average Access Time clock cycles brPage 17br brPage 18br Qing Xu. Tie Chen. Flash. An electronic device. Non-volatile. Can be electrically erased and reprogrammed. Usage:. Digital Music Device. Smartphones. Digital Cameras. Removable Storage Devices. (picpedia.com). MLCs. with Bit-fixing Coding. Yue Li. joint work with. Anxiao. (Andrew) Jiang and . Jehoshua. . Bruck. Flash memories have excellent performance.. Cells are programmed by injecting electrons.. Programming is fast.. Memories - I. Montek Singh. Oct 7, 2015. Topics. Overview . of Memory Types. Read-Only Memory (ROM): . PROMs, FLASH, etc.. Random. -Access Memory (RAM). Static today. Dynamic next. 2. Types of Memory. Ben Zorn. Microsoft Research. In collaboration . with:. Emery Berger and Gene Novark, . Umass. - Amherst. Karthik Pattabiraman, UIUC. Vinod Grover and Ted . Hart, Microsoft . Research. Ben Zorn, Microsoft Research. Embedded Systems . Chanik. Park, . Jaeyu. . Seo. , . Dongyoung. . Seo. , . Shinhan. Kim and . Bumsoo. Kim . Software Center, SAMSUNG Electronics, Co., Ltd. . Proceedings of the 21st International Conference on Computer . in MLC NAND Flash Memory:. Characterization, Mitigation, and Recovery. Yu . Cai. , . Yixin Luo. , Saugata Ghose, . Erich F. . Haratsch. *, Ken Mai, Onur Mutlu. Carnegie Mellon University, *Seagate Technology. Experimental Analysis, Exploits, and Mitigation Techniques. HPCA Session 3A – Monday, 3:15 . pm. , Salon F. 128GB. NAND . Flash. 256GB. NAND Flash. NAND flash scaling: . shrink size. . of each . flash cell, . (and Security) Issues of DRAM and NAND Flash Scaling. Onur Mutlu. omutlu@gmail.com. http://users.ece.cmu.edu/~omutlu. /. HPCA Memory . R. eliability Workshop. March 13, 2016. Limits of Charge Memory. AKA: The Fly and the Fly Paper: . How a Stuck Church gets Unstuck!. By Dr. Tom Cheyney. Founder . & Directional . Leader. O. R. L. A. N. D. O. N. O. V. 3. -. 5. Stuck in the 70’s With no Place to Grow. Characterization, Mitigation, and Recovery. Yu . Cai. , . Yixin Luo. , Saugata Ghose, . Erich F. . Haratsch. *, Ken Mai, Onur Mutlu. Carnegie Mellon University, *Seagate Technology. Executive Summary. Explain the limitations of flash memory.. Define wear leveling.. Define the term IO Transaction. Define the terms synchronous bus and asynchronous interconnect.. Explain the difference between polling and interrupts. Thesis Oral. Yixin Luo. Committee:. Onur Mutlu (Chair) . Phillip B. Gibbons. James C. Hoe. Erich F. Haratsch, Seagate. Yu Cai, SK Hynix. Presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy. Features...............................................................................................6PUFeatures......................................................................................
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